Semiconductor device

ABSTRACT

A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/367,329, filed Mar. 28, 2019, now allowed, which is a continuation ofU.S. application Ser. No. 15/204,015, filed Jul. 7, 2016, now U.S. Pat.No. 10,276,724, which claims the benefit of a foreign priorityapplication filed in Japan as Serial No. 2015-140794 on Jul. 14, 2015,both of which are incorporated by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to, for example, a transistor, asemiconductor device, and manufacturing methods thereof. The presentinvention relates to, for example, a display device, a light-emittingdevice, a lighting device, a power storage device, a memory device, animaging device, a processor, and an electronic device. The presentinvention relates to a method for manufacturing a display device, aliquid crystal display device, a light-emitting device, a memory device,an imaging device, and an electronic device. The present inventionrelates to a driving method of a semiconductor device, a display device,a liquid crystal display device, a light-emitting device, a memorydevice, and an electronic device.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of one embodiment of theinvention disclosed in this specification and the like relates to anobject, a method, or a manufacturing method. In addition, one embodimentof the present invention relates to a process, a machine, manufacture,or a composition of matter.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A display device, a light-emitting device, a lightingdevice, an electro-optical device, a semiconductor circuit, and anelectronic device include a semiconductor device in some cases.

2. Description of the Related Art

In recent years, a transistor including an oxide semiconductor hasattracted attention. It is known that a transistor including an oxidesemiconductor has an extremely low leakage current in an off state. Forexample, a low-power-consumption CPU utilizing a characteristic of lowleakage current of the transistor including an oxide semiconductor isdisclosed (see Patent Document 1). [Patent Document]

[Patent Document 1] Japanese Published Patent Application No.2012-257187

SUMMARY OF THE INVENTION

Heat treatment at a high temperature is performed in some cases toreduce impurities such as water or hydrogen in a transistor including anoxide semiconductor. Therefore, a gate electrode, a source electrode, ora drain electrode which is used in the transistor is preferably formedusing a material having heat resistance and oxidation resistance.

Here, an object of one embodiment of the present invention is to providea transistor including a conductor having heat resistance and oxidationresistance.

Another object is to provide a transistor with stable electricalcharacteristics. Another object is to provide a transistor having a lowleakage current in an off state. Another object is to provide atransistor with high frequency characteristics. Another object is toprovide a transistor having normally-off electrical characteristics.Another object is to provide a transistor having a small subthresholdswing value. Another object is to provide a transistor having highreliability.

Another object is to provide a semiconductor device including any of thetransistors. Another object is to provide a module including thesemiconductor device. Another object is to provide an electronic deviceincluding the semiconductor device or the module. Another object is toprovide a novel semiconductor device. Another object is to provide anovel module. Another object is to provide a novel electronic device.

Note that the description of these objects does not preclude theexistence of other objects. In one embodiment of the present invention,there is no need to achieve all the objects. Other objects will beapparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

One embodiment of the present invention is a semiconductor deviceincluding a semiconductor, a first insulator in contact with thesemiconductor, a first conductor in contact with the first insulator andoverlapping with the semiconductor with the first insulator positionedbetween the semiconductor and the first conductor, and second and thirdconductors in contact with the semiconductor. One or more of the firstto third conductors include a region containing tungsten (W) and one ormore elements selected from silicon (Si), carbon (C), germanium (Ge),tin (Sn), aluminum (Al), and nickel (Ni).

Another embodiment of the present invention is the semiconductor devicein which one or more of the first to third conductors include a regionwith a silicon concentration measured by Rutherford back scatteringspectrometry (RBS) of greater than or equal to 5 atomic % and less thanor equal to 70 atomic %.

Another embodiment of the present invention is the semiconductor devicein which at least one of the first to the third conductors includes aregion containing silicon and oxygen on a surface of the conductor. Thethickness of the region is greater than or equal to 0.2 nm and less thanor equal to 20 nm.

Another embodiment of the present invention is the semiconductor deviceincluding a second insulator in contact with the semiconductor, and afourth conductor in contact with the second insulator and overlappingwith the semiconductor with the second insulator positioned between thefourth conductor and the semiconductor. The fourth conductor includes aregion containing tungsten and one or more elements selected fromsilicon, carbon, germanium, tin, aluminum, and nickel.

Another embodiment of the present invention is the semiconductor devicein which the fourth conductor includes a region with a siliconconcentration measured by Rutherford back scattering spectrometry (RBS)of greater than or equal to 5 atomic % and less than or equal to 70atomic %.

Another embodiment of the present invention is the semiconductor devicein which the fourth conductor includes a region containing silicon andoxygen on a surface of the conductor. The thickness of the region isgreater than or equal to 0.2 nm and less than or equal to 20 nm.

Another embodiment of the present invention is the semiconductor devicein which the semiconductor includes an oxide semiconductor.

According to one embodiment of the present invention, a transistor thatis formed using a conductor having heat resistance and oxidationresistance.

A transistor with stable electrical characteristics can be provided. Atransistor having a low leakage current in an off state can be provided.A transistor with high frequency characteristics can be provided. Atransistor with normally-off electrical characteristics can be provided.A transistor with a small subthreshold swing value can be provided. Ahighly reliable transistor can be provided.

A semiconductor device including the transistor can be provided. Amodule including the semiconductor device can be provided. An electronicdevice including the semiconductor device or the module can be provided.A novel semiconductor device can be provided. A novel module can beprovided. A novel electronic device can be provided.

Note that the description of these effects does not preclude theexistence of other effects. One embodiment of the present invention doesnot necessarily achieve all the effects listed above. Other effects willbe apparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1D are a top view and cross-sectional views illustrating atransistor of one embodiment of the present invention.

FIGS. 2A to 2E show structural analysis of a CAAC-OS and a singlecrystal oxide semiconductor by XRD and selected-area electrondiffraction patterns of a CAAC-OS.

FIGS. 3A to 3E show a cross-sectional TEM image and plan-view TEM imagesof a CAAC-OS and images obtained through analysis thereof.

FIGS. 4A to 4D show electron diffraction patterns and a cross-sectionalTEM image of an nc-OS.

FIGS. 5A and 5B show cross-sectional TEM images of an a-like OS.

FIG. 6 shows a change in a crystal part of an In—Ga—Zn oxide by electronirradiation.

FIGS. 7A to 7C are cross-sectional views illustrating a transistor ofone embodiment of the present invention.

FIGS. 8A to 8D are cross-sectional views each illustrating a transistorof one embodiment of the present invention.

FIGS. 9A and 9B are cross-sectional views illustrating a transistor ofone embodiment of the present invention.

FIGS. 10A to 10D are cross-sectional views illustrating transistors ofembodiments of the present invention.

FIGS. 11A and 11B are cross-sectional views illustrating a transistor ofone embodiment of the present invention.

FIGS. 12A to 12D are cross-sectional views illustrating transistors ofembodiments of the present invention.

FIGS. 13A to 13H are cross-sectional views illustrating a method forfabricating a transistor of one embodiment of the present invention.

FIGS. 14A to 14F are cross-sectional views illustrating a method forfabricating a transistor of one embodiment of the present invention.

FIGS. 15A to 15D are cross-sectional views illustrating a method forfabricating a transistor of one embodiment of the present invention.

FIGS. 16A and 16B are a schematic diagram and a cross-sectional viewillustrating a deposition apparatus.

FIGS. 17A to 17H are cross-sectional views illustrating a method offabricating a transistor according to one embodiment of the invention;

FIGS. 18A to 18F are cross-sectional views illustrating a method formanufacturing a transistor of one embodiment of the present invention.

FIGS. 19A to 19F are cross-sectional views illustrating a method formanufacturing a transistor according to one embodiment of the presentinvention.

FIG. 20 is a top view illustrating a manufacturing apparatus of oneembodiment of the present invention.

FIG. 21 is a cross-sectional view illustrating a chamber of oneembodiment of the present invention.

FIG. 22 is a cross-sectional view illustrating a chamber of oneembodiment of the present invention.

FIGS. 23A and 23B are circuit diagrams of a semiconductor deviceaccording to one embodiment of the present invention;

FIG. 24 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 25 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 26 is a cross-sectional view illustrating a semiconductor deviceaccording to one embodiment of the present invention.

FIGS. 27A to 27C are circuit diagrams illustrating memory devices ofembodiments of the present invention.

FIG. 28 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 29 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 30 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 31 is a circuit diagram illustrating a semiconductor device of oneembodiment of the present invention.

FIG. 32 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 33 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIG. 34 is a cross-sectional view illustrating a semiconductor device ofone embodiment of the present invention.

FIGS. 35A and 35B are top views each illustrating a semiconductor deviceof one embodiment of the present invention.

FIGS. 36A and 36B are block diagrams each illustrating a semiconductordevice of one embodiment of the present invention.

FIGS. 37A and 37B are cross-sectional views each illustrating asemiconductor device of one embodiment of the present invention.

FIGS. 38A and 38B are each a cross-sectional view illustrating asemiconductor device according to one embodiment of the presentinvention.

FIGS. 39A1, 39A2, 39A3, 39B1, 39B2, and 39B3 are perspective views andcross-sectional views of a semiconductor device of one embodiment of thepresent invention.

FIG. 40 is a block diagram illustrating a semiconductor device of oneembodiment of the present invention.

FIG. 41 is a circuit diagram illustrating a semiconductor device of oneembodiment of the present invention.

FIGS. 42A to 42C are a circuit diagram, a top view, and across-sectional view illustrating a semiconductor device of oneembodiment of the present invention.

FIGS. 43A and 43B are a circuit diagram and a cross-sectional viewillustrating a semiconductor device of one embodiment of the presentinvention.

FIGS. 44A to 44F are perspective views each illustrating an electronicdevice of one embodiment of the present invention.

FIGS. 45A and 45B each show an XPS analysis result.

FIGS. 46A and 46B each show a STEM image of a sample.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments and examples of the present invention will bedescribed in detail with the reference to the drawings. However, thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that modes and detailsdisclosed herein can be modified in various ways. Furthermore, thepresent invention is not construed as being limited to description ofthe embodiments. In describing structures of the present invention withreference to the drawings, common reference numerals are used for thesame portions in different drawings. Note that the same hatched patternis applied to similar parts, and the similar parts are not denoted byreference numerals in some cases.

A structure in one of the following embodiments can be appropriatelyapplied to, combined with, or replaced with another structure in anotherembodiment, for example, and the resulting structure is also oneembodiment of the present invention.

Note that the size, the thickness of films (layers), or regions indrawings is sometimes exaggerated for simplicity.

In this specification, the terms “film” and “layer” can be interchangedwith each other.

A voltage usually refers to a potential difference between a givenpotential and a reference potential (e.g., a source potential or aground potential (GND)). A voltage can be referred to as a potential.Note that in general, a potential (a voltage) is relative and isdetermined depending on the amount relative to a reference potential.Therefore, a potential that is represented as a “ground potential” orthe like is not always 0 V. For example, the lowest potential in acircuit may be represented as a “ground potential.” Alternatively, asubstantially intermediate potential in a circuit may be represented asa “ground potential.” In these cases, a positive potential and anegative potential are set using the potential as a reference.

Note that the ordinal numbers such as “first” and “second” are used forconvenience and do not denote the order of steps or the stacking orderof layers. Therefore, for example, the term “first” can be replaced withthe term “second,” “third,” or the like as appropriate. In addition, theordinal numbers in this specification and the like do not correspond tothe ordinal numbers which specify one embodiment of the presentinvention in some cases.

Note that impurities in a semiconductor refer to, for example, elementsother than the main components of the semiconductor. For example, anelement with a concentration of lower than 0.1 atomic % is an impurity.When an impurity is contained, the density of states (DOS) may be formedin a semiconductor, the carrier mobility may be decreased, or thecrystallinity may be decreased. In the case where the semiconductor isan oxide semiconductor, examples of an impurity which changescharacteristics of the semiconductor include Group 1 elements, Group 2elements, Group 13 elements, Group 14 elements, Group 15 elements, andtransition metals other than the main components; specifically, thereare hydrogen (included in water), lithium, sodium, silicon, boron,phosphorus, carbon, and nitrogen, for example. In the case of an oxidesemiconductor, oxygen vacancies may be formed by entry of impuritiessuch as hydrogen. In the case where the semiconductor is silicon layer,examples of an impurity which changes characteristics of thesemiconductor include oxygen, Group 1 elements except hydrogen, Group 2elements, Group 13 elements, and Group 15 elements.

Note that the channel length refers to, for example, the distancebetween a source (a source region or a source electrode) and a drain (adrain region or a drain electrode) in a region where a semiconductor (ora portion where a current flows in a semiconductor when a transistor ison) and a gate electrode overlap with each other or a region where achannel is formed in a top view of the transistor. In one transistor,channel lengths in all regions are not necessarily the same. In otherwords, the channel length of one transistor is not limited to one valuein some cases. Therefore, in this specification, the channel length isany one of values, the maximum value, the minimum value, or the averagevalue in a region where a channel is formed.

The channel width refers to, for example, the length of a portion wherea source and a drain face each other in a region where a semiconductor(or a portion where a current flows in a semiconductor when a transistoris on) and a gate electrode overlap with each other, or a region where achannel is formed. In one transistor, channel widths in all regions arenot necessarily the same. In other words, the channel width of onetransistor is not limited to one value in some cases. Therefore, in thisspecification, the channel width is any one of values, the maximumvalue, the minimum value, or the average value in a region where achannel is formed.

Note that depending on a transistor structure, a channel width in aregion where a channel is formed actually (hereinafter referred to as aneffective channel width) is different from a channel width shown in atop view of a transistor (hereinafter referred to as an apparent channelwidth) in some cases. For example, in a transistor having athree-dimensional structure, an effective channel width is greater thanan apparent channel width shown in a top view of the transistor, and itsinfluence cannot be ignored in some cases. For example, in aminiaturized transistor having a three-dimensional structure, theproportion of a channel region formed in a side surface of asemiconductor is high in some cases. In that case, an effective channelwidth obtained when a channel is actually formed is greater than anapparent channel width shown in the top view.

In a transistor having a three-dimensional structure, an effectivechannel width is difficult to measure in some cases. For example, toestimate an effective channel width from a design value, it is necessaryto assume that the shape of a semiconductor is known. Therefore, in thecase where the shape of a semiconductor is not known accurately, it isdifficult to measure an effective channel width accurately.

Therefore, in this specification, in a top view of a transistor, anapparent channel width that is a length of a portion where a source anda drain face each other in a region where a semiconductor and a gateelectrode overlap with each other is referred to as a surrounded channelwidth (SCW) in some cases. Furthermore, in this specification, in thecase where the term “channel width” is simply used, it may denote asurrounded channel width and an apparent channel width. Alternatively,in this specification, in the case where the term “channel width” issimply used, it may denote an effective channel width in some cases.Note that the values of a channel length, a channel width, an effectivechannel width, an apparent channel width, a surrounded channel width,and the like can be determined by obtaining and analyzing across-sectional TEM image and the like.

Note that in the case where field-effect mobility, a current value perchannel width, and the like of a transistor are obtained by calculation,a surrounded channel width may be used for the calculation. In thatcase, the values might be different from those calculated by using aneffective channel width.

Note that in this specification, the description “A has a shape suchthat an end portion extends beyond an end portion of B” may indicate,for example, the case where at least one of end portions of A ispositioned on an outer side than at least one of end portions of B in aplan view or a cross-sectional view. Thus, the description “A has ashape such that an end portion extends beyond an end portion of B” canbe read as the description “one end portion of A is positioned on anouter side than one end portion of B in a top view,” for example.

In this specification, the term “semiconductor” can be replaced with anyterm for various semiconductors in some cases. For example, the term“semiconductor” can be replaced with the term for a Group 14semiconductor such as silicon or germanium; an oxide semiconductor; acompound semiconductor such as silicon carbide, germanium silicide,gallium arsenide, indium phosphide, zinc selenide, or cadmium sulfide;or an organic semiconductor.

In this specification, the term “parallel” indicates that the angleformed between two straight lines is greater than or equal to −10° andless than or equal to 10°, and accordingly also includes the case wherethe angle is greater than or equal to −5° and less than or equal to 5°.A term “substantially parallel” indicates that the angle formed betweentwo straight lines is greater than or equal to −30° and less than orequal to 30°. The term “perpendicular” indicates that the angle formedbetween two straight lines is greater than or equal to 80° and less thanor equal to 100°, and accordingly also includes the case where the angleis greater than or equal to 85° and less than or equal to 95°. A term“substantially perpendicular” indicates that the angle formed betweentwo straight lines is greater than or equal to 60° and less than orequal to 120°.

In this specification, trigonal and rhombohedral crystal systems areincluded in a hexagonal crystal system.

Embodiment 1

In this embodiment, structures of semiconductor devices of embodimentsof the present invention are described with reference to FIGS. 1A to 1Dto FIGS. 12A to 12D.

<Structure of Transistor>

The structure of a transistor is described below as an example of thesemiconductor device of one embodiment of the present invention.

The structure of a transistor 10 is described with reference to FIGS. 1Ato 1C. FIG. 1A is a top view of the transistor 10. FIG. 1B is across-sectional view taken along a dashed-dotted line A1-A2 in FIG. 1A,and FIG. 1C is a cross-sectional view taken along a dashed-dotted lineA3-A4 in FIG. 1A. A region along dashed-dotted line A1-A2 shows astructure of the transistor 10 in the channel length direction, and aregion along dashed-dotted line A3-A4 shows a structure of thetransistor 10 in the channel width direction. The channel lengthdirection of a transistor refers to a direction in which carriers movebetween a source (a source region or a source electrode) and a drain (adrain region or a drain electrode). The channel width direction refersto a direction perpendicular to the channel length direction in a planeparallel to a substrate. An insulator 106 a, a semiconductor 106 b, andan insulator 106 c can be provided to substantially overlap withconductors 108 a and 108 b and the like; however, for clarity of the topview, the insulator 106 a, the semiconductor 106 b, and the insulator106 c are denoted with a thin dashed line in FIG. 1A as beingmisaligned.

The transistor 10 includes an insulator 101, a conductor 102, andinsulators 105, 103, and 104 which are over the substrate 100; theinsulator 106 a, the semiconductor 106 b and the insulator 106 c whichare over the insulator 104; the conductors 108 a and 108 b over thesemiconductor 106 b; an insulator 112 over the insulator 106 c; aconductor 114 over the insulator 112; an insulator 116 over theconductor 114; an insulator 118; and conductors 120 a and 120 b.

Here, the insulator 101, the insulator 103, the insulator 104, theinsulator 105, the insulator 106 a, the insulator 106 c, the insulator112, the insulator 116, and the insulator 118 can also be referred to asinsulating films or insulating layers. The conductor 102, the conductor108 a, the conductor 108 b, the conductor 114, the conductor 120 a, andthe conductor 120 b can also be referred to as conductive films orconductive layers. The semiconductor 106 b can also be referred to as asemiconductor film or a semiconductor layer.

Note that the insulator 106 a and/or the insulator 106 c are/is notnecessarily provided.

One or more of the insulator 105, the insulator 103, and the insulator104 may be provided. For example, the structure may be either a singlelayer structure of the insulator 104 or a stacked layer structure of theinsulator 103 and the insulator 104.

As will be described in detail later, the insulator 106 a and theinsulator 106 c are sometimes formed using a material that can functionas a conductor or a semiconductor when the material is used alone.However, when the transistor is formed using the semiconductor 106 bbetween the insulator 106 a and the insulator 106 c as a stack, carriersflow in the semiconductor 106 b, in the vicinity of the interfacebetween the semiconductor 106 b and the insulator 106 a, and in thevicinity of the interface between the semiconductor 106 b and theinsulator 106 c; thus, the insulator 106 a and the insulator 106 c havea region not functioning as a channel of the transistor. For thatreason, in the present specification and the like, the insulators 106 aand 106 c are not referred to as conductors or semiconductors butreferred to as insulators.

Over the insulator 101 formed over the substrate 100, the conductor 102is formed. At least part of the conductor 102 overlaps with theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c. Theinsulator 105 is formed over and in contact with the conductor 102 tocover the conductor 102. The insulator 103 is formed over the insulator105, and the insulator 104 is formed over the insulator 103.

The insulator 106 a is formed over the insulator 104, and thesemiconductor 106 b is formed in contact with a top surface of theinsulator 106 a. Although end portions of the insulator 106 a and thesemiconductor 106 b are substantially aligned in FIG. 1B, the structureof the semiconductor device described in this embodiment is not limitedto this example.

The conductor 108 a and the conductor 108 b are formed in contact withthe semiconductor 106 b. The conductor 108 a and the conductor 108 b arespaced from each other and function as a source electrode and a drainelectrode of the transistor 10.

The insulator 106 c is formed in contact with the semiconductor 106 b.The insulator 106 c is preferably in contact with the semiconductor 106b in a region sandwiched between the conductor 108 a and the conductor108 b. Although the insulator 106 c is formed to cover top surfaces ofthe conductor 108 a and the conductor 108 b in FIG. 1B, the structure ofthe semiconductor device described in this embodiment is not limited tothis example.

The insulator 112 is formed over the insulator 106 c. The conductor 114is formed over the insulator 112. Although the insulator 112 and theinsulator 106 c are formed such that end portions of the insulator 112and the insulator 106 c are substantially aligned to each other in FIG.1B, the structure of the semiconductor device described in thisembodiment is not limited to this example. Note that the conductor 114can function as a gate electrode of the transistor 10.

The insulator 116 is formed over the conductor 114 and the insulator112, and the insulator 118 is formed over the insulator 116. Theconductor 120 a and the conductor 120 b are formed over the insulator118. The conductor 120 a and the conductor 120 b are connected to theconductor 108 a and the conductor 108 b through openings formed in theinsulator 106 c, the insulator 112, the insulator 116, and the insulator118.

One or more of the conductor 102, the conductor 114, the conductor 108a, and the conductor 108 b preferably includes a region containingtungsten and one or more elements selected from silicon, carbon,germanium, tin, aluminum, and nickel.

In particular, conductors each including a region containing tungstenand silicon are preferably used as the conductors in this embodiment.Furthermore, the conductors preferably include a region with the siliconconcentration higher than or equal to 5 atomic % and less than or equalto 70 atomic % that is measured by RBS.

When tungsten is deposited by a sputtering method or the like, thetungsten film may be a conductor having crystallinity. Accordingly, thesurface flatness of the conductor is low in some cases. However, whenthe conductors described in the present invention are used, conductorseach including an amorphous part can be formed. Thus, conductors havinghigh surface flatness are easily formed.

The conductor preferably includes a region containing silicon and oxygenon the surface of the conductor, and the thickness of the region ispreferably greater than or equal to 0.2 nm and less than or equal to 20nm. The region contains a large amount of silicon and oxygen, in whichcase the region can function as an insulator. The region functions as abarrier layer against oxygen, whereby oxidation of the entire conductorcan be prevented.

When the conductors described above are used as the conductor 102, theconductor 114, the conductor 108 a, and the conductor 108 b, oxidationof the entire conductors can be prevented even in the case where theconductors are subjected to heat treatment or exposed to an oxidationatmosphere in manufacturing the transistor 10, for example. Accordingly,an increase in the resistance of the conductors can be suppressed; thus,a transistor having favorable electrical characteristics (e.g., on-statecurrent) can be manufactured.

<Semiconductor>

The structure of the semiconductor 106 b is described in detail below.

A detailed structure of each of the insulator 106 a and the insulator106 c will be described in addition to that of the semiconductor 106 b.

The semiconductor 106 b is an oxide semiconductor containing indium, forexample. The semiconductor 106 b can have high carrier mobility(electron mobility) by containing indium, for example. The semiconductor106 b preferably contains an element M. The element M is preferably Ti,Ga, Y, Zr, La, Ce, Nd, Sn, or Hf. Note that two or more of the aboveelements may be used in combination as the element M in some cases. Theelement M is an element having high bonding energy with oxygen, forexample. The element M is an element whose bonding energy with oxygen ishigher than that of indium, for example. The element M is an elementthat can increase the energy gap of the oxide semiconductor, forexample. Furthermore, the semiconductor 106 b preferably contains zinc.When the oxide semiconductor contains zinc, the oxide semiconductor iseasily crystallized, in some cases.

Note that the semiconductor 106 b is not limited to the oxidesemiconductor containing indium. The semiconductor 106 b may be, forexample, an oxide semiconductor which does not contain indium andcontains zinc, an oxide semiconductor which does not contain indium andcontains gallium, or an oxide semiconductor which does not containindium and contains tin, e.g., a zinc tin oxide or a gallium tin oxide.

For example, the insulator 106 a and the insulator 106 c are oxidesemiconductors including one or more elements, or two or more elementsother than oxygen included in the semiconductor 106 b. Since theinsulator 106 a and the insulator 106 c each include one or moreelements, or two or more elements other than oxygen included in thesemiconductor 106 b, a defect state is less likely to be formed at theinterface between the insulator 106 a and the semiconductor 106 b andthe interface between the semiconductor 106 b and the insulator 106 c.

The insulator 106 a, the semiconductor 106 b, and the insulator 106 cpreferably include at least indium. In the case of using an In-M-Znoxide as the insulator 106 a, when the summation of In and M is assumedto be 100 atomic %, the proportions of In and M are preferably set to beless than 50 atomic % and greater than 50 atomic %, respectively,further preferably less than 25 atomic % and greater than 75 atomic %,respectively. In the case of using an In-M-Zn oxide as the semiconductor106 b, when the total proportion of In and M is assumed to be 100 atomic%, the proportions of In and M are preferably set to be greater than 25atomic % and less than 75 atomic %, respectively, further preferablygreater than 34 atomic % and less than 66 atomic %, respectively. In thecase of using an In-M-Zn oxide as the insulator 106 c, when thesummation of In and M is assumed to be 100 atomic %, the proportions ofIn and M are preferably set to be less than 50 atomic % and greater than50 atomic %, respectively, further preferably less than 25 atomic % andgreater than 75 atomic %, respectively. Note that the insulator 106 cmay be an oxide that is of the same type as the oxide of the insulator106 a. Note that the insulator 106 a and/or the insulator 106 c do/doesnot necessarily contain indium in some cases. For example, the insulator106 a and/or the insulator 106 c may be gallium oxide. Note that theatomic ratio between the elements included in the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c is not necessarily a simpleinteger ratio. Furthermore, the composition is measured by RBS or thelike.

In the case of deposition using a sputtering method, typical examples ofthe atomic ratio between the metal elements of a target that is used forthe insulator 106 a or the insulator 106 c include In:M:Zn=1:2:4,In:M:Zn=1:3:2, In:M:Zn=1:3:4, In:M:Zn=1:3:6, In:M:Zn=1:3:8,In:M:Zn=1:4:3, In:M:Zn=1:4:4, In:M:Zn=1:4:5, In:M:Zn=1:4:6,In:M:Zn=1:6:3, In:M:Zn=1:6:4, In:M:Zn=1:6:5, In:M:Zn=1:6:6,In:M:Zn=1:6:7, In:M:Zn=1:6:8, and In:M:Zn=1:6:9.

In the case of deposition using a sputtering method, typical examples ofthe atomic ratio between the metal elements of a target that is used forthe semiconductor 106 b include In: M:Zn=1:1:1, In:M:Zn=1:1:1.2,In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In:M:Zn=2:1:3, In: M:Zn=3:1:2,In:M:Zn=4:2:4.1, and In:M:Zn=5:1:7. In particular, when a sputteringtarget containing In, Ga, and Zn at an atomic ratio of 4:2:4.1 is used,the deposited semiconductor 106 b may contain In, Ga, and Zn at anatomic ratio of around 4:2:3.

An indium gallium oxide has small electron affinity and a highoxygen-blocking property. Therefore, the insulator 106 c preferablyincludes an indium gallium oxide. The gallium atomic ratio [Ga/(In+Ga)]is, for example, higher than or equal to 70%, preferably higher than orequal to 80%, further preferably higher than or equal to 90%.

For the semiconductor 106 b, an oxide with a wide energy gap may beused, for example. For example, the energy gap of the semiconductor 106b is greater than or equal to 2.5 eV and less than or equal to 4.2 eV,preferably greater than or equal to 2.8 eV and less than or equal to 3.8eV, further preferably greater than or equal to 3 eV and less than orequal to 3.5 eV. Here, the energy gap of the insulator 106 a is largerthan that of the semiconductor 106 b. The energy gap of the insulator106 c is larger than that of the semiconductor 106 b.

As the semiconductor 106 b, an oxide having an electron affinity higherthan those of the insulators 106 a and 106 c is used. For example, asthe semiconductor 106 b, an oxide having an electron affinity higherthan those of the insulators 106 a and 106 c by 0.07 eV or higher and1.3 eV or lower, preferably 0.1 eV or higher and 0.7 eV or lower, morepreferably 0.15 eV or higher and 0.4 eV or lower is used. Note that theelectron affinity refers to an energy difference between the vacuumlevel and the conduction band minimum. In other words, the energy levelof the conduction band minimum of the insulator 106 a or the insulator106 c is closer to the vacuum level than the energy level of theconduction band minimum of the semiconductor 106 b is.

In that case, when a gate voltage is applied, a channel is formed in thesemiconductor 106 b having the highest electron affinity among theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c. Notethat when a high gate voltage is applied, a current also flows in theinsulator 106 a near the interface with the semiconductor 106 b and inthe insulator 106 c near the interface with the semiconductor 106 b insome cases.

The insulator 106 a and the insulator 106 c are formed using a substancethat can function as a conductor, a semiconductor, or an insulator whenthey are used alone. However, when the transistor is formed using astack including the insulator 106 a, the semiconductor 106 b, and theinsulator 106 c, electrons flow in the semiconductor 106 b, in thevicinity of the interface between the semiconductor 106 b and theinsulator 106 a, and in the vicinity of the interface between thesemiconductor 106 b and the insulator 106 c; thus, the insulator 106 aand the insulator 106 c have a region not functioning as a channel ofthe transistor. For that reason, in this specification and the like, theinsulator 106 a and the insulator 106 c are not referred to as asemiconductor but an insulator. Note that the reason why the insulator106 a and the insulator 106 c are referred to as an insulator is becausethey are closer to an insulator than the semiconductor 106 b is in termsof their function in the transistor; thus, a substance that can be usedfor the semiconductor 106 b is used for the insulator 106 a and theinsulator 106 c in some cases.

Here, in some cases, there is a mixed region of the insulator 106 a andthe semiconductor 106 b between the insulator 106 a and thesemiconductor 106 b. Furthermore, in some cases, there is a mixed regionof the semiconductor 106 b and the insulator 106 c between thesemiconductor 106 b and the insulator 106 c. The mixed region has a lowdensity of interface states. For that reason, the stack including theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c has aband structure where energy is changed continuously at each interfaceand in the vicinity of the interface (continuous junction). Note thatthe boundary between the insulator 106 a and the semiconductor 106 b andthe boundary between the insulator 106 c and the semiconductor 106 b arenot clear in some cases.

At this time, electrons move mainly in the semiconductor 106 b, not inthe insulator 106 a and the insulator 106 c. As described above, whenthe density of interface states at the interface between the insulator106 a and the semiconductor 106 b and the density of interface states atthe interface between the semiconductor 106 b and the insulator 106 care decreased, electron movement in the semiconductor 106 b is lesslikely to be inhibited and the on-state current of the transistor can beincreased.

As factors of inhibiting electron movement are decreased, the on-statecurrent of the transistor can be increased. For example, in the casewhere there is no factor of inhibiting electron movement, electrons areassumed to be efficiently moved. Electron movement is inhibited, forexample, in the case where physical unevenness of the channel formationregion is large.

To increase the on-state current of the transistor, for example, rootmean square (RMS) roughness with a measurement area of 1 μm×1 μm of thetop surface or the bottom surface (a formation surface; here, the topsurface of the insulator 106 a) of the semiconductor 106 b is less than1 nm, preferably less than 0.6 nm, more preferably less than 0.5 nm,still more preferably less than 0.4 nm. The average surface roughness(also referred to as Ra) with the measurement area of 1 μm×1 μm is lessthan 1 nm, preferably less than 0.6 nm, more preferably less than 0.5nm, still more preferably less than 0.4 nm. The maximum difference (P−V)with the measurement area of 1 μm×1 μm is less than 10 nm, preferablyless than 9 nm, more preferably less than 8 nm, still more preferablyless than 7 nm. RMS roughness, Ra, and P—V can be measured using, forexample, a scanning probe microscope SPA-500 manufactured by SII NanoTechnology Inc.

Moreover, the thickness of the insulator 106 c is preferably as small aspossible to increase the on-state current of the transistor. It ispreferable that the thickness of the insulator 106 c be smaller thanthat of the insulator 106 a and smaller than that of the semiconductor106 b. For example, the insulator 106 c is formed to include a regionhaving a thickness of less than 10 nm, preferably less than or equal to5 nm, more preferably less than or equal to 3 nm. Meanwhile, theinsulator 106 c has a function of blocking entry of elements other thanoxygen (such as hydrogen and silicon) included in the adjacent insulatorinto the semiconductor 106 b where a channel is formed. For this reason,it is preferable that the insulator 106 c have a certain thickness. Forexample, the insulator 106 c is formed to include a region having athickness of greater than or equal to 0.3 nm, preferably greater than orequal to 1 nm, more preferably greater than or equal to 2 nm.

To improve reliability, preferably, the thickness of the insulator 106 ais large. For example, the insulator 106 a includes a region with athickness of, for example, greater than or equal to 10 nm, preferablygreater than or equal to 20 nm, more preferably greater than or equal to40 nm, still more preferably greater than or equal to 60 nm. When thethickness of the insulator 106 a is made large, a distance from aninterface between the adjacent insulator and the insulator 106 a to thesemiconductor 106 b in which a channel is formed can be large. Since theproductivity of the semiconductor device might be decreased, theinsulator 106 a has a region with a thickness of, for example, less thanor equal to 200 nm, preferably less than or equal to 120 nm, morepreferably less than or equal to 80 nm.

Silicon in the oxide semiconductor might serve as a carrier trap or acarrier generation source. Thus, the silicon concentration in thesemiconductor 106 b is preferably as low as possible. For example, aregion with a silicon concentration measured by secondary ion massspectrometry (SIMS) of higher than or equal to 1×10¹⁶ atoms/cm³ andlower than or equal to 1×10¹⁹ atoms/cm³, preferably higher than or equalto 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³, morepreferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower than orequal to 2×10¹⁸ atoms/cm³ is provided between the semiconductor 106 band the insulator 106 a. A region with a silicon concentration measuredby SIMS of higher than or equal to 1×10¹⁶ atoms/cm³ and lower than orequal to 1×10¹⁹ atoms/cm³, preferably higher than or equal to 1×10¹⁶atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³, more preferablyhigher than or equal to 1×10¹⁶ atoms/cm³ and lower than or equal to2×10¹⁸ atoms/cm³ is provided between the semiconductor 106 b and theinsulator 106 c.

It is preferable to reduce the hydrogen concentration in the insulator106 a and the insulator 106 c in order to reduce the hydrogenconcentration in the semiconductor 106 b. The insulator 106 a and theinsulator 106 c each include a region with a hydrogen concentrationmeasured by SIMS of higher than or equal to 1×10¹⁶ atoms/cm³ and lowerthan or equal to 2×10²⁰ atoms/cm³, preferably higher than or equal to1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁹ atoms/cm³, morepreferably higher than or equal to 1×10¹⁶ atoms/cm³ and lower than orequal to 1×10¹⁹ atoms/cm³, or still more preferably higher than or equalto 1×10¹⁶ atoms/cm³ and lower than or equal to 5×10¹⁸ atoms/cm³. It ispreferable to reduce the nitrogen concentration in the insulator 106 aand the insulator 106 c in order to reduce the nitrogen concentration inthe semiconductor 106 b. The insulator 106 a and the insulator 106 ceach include a region with a nitrogen concentration measured by SIMS ofhigher than or equal to 1×10¹⁵ atoms/cm³ and lower than or equal to5×10¹⁹ atoms/cm³, preferably higher than or equal to 1×10¹⁵ atoms/cm³and lower than or equal to 5×10¹⁸ atoms/cm³, more preferably higher thanor equal to 1×10¹⁵ atoms/cm³ and lower than or equal to 1×10¹⁸atoms/cm³, or still more preferably higher than or equal to 1×10¹⁵atoms/cm³ and lower than or equal to 5×10¹⁷ atoms/cm³.

The insulator 106 a, the semiconductor 106 b, and the insulator 106 cdescribed in this embodiment (in particular, the semiconductor 106 b)are oxide semiconductors having a low impurity concentration and a lowdensity of defect states (a small number of oxygen vacancies), and canbe referred to as “highly purified intrinsic” or “substantially highlypurified intrinsic” oxide semiconductors. A highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor has fewcarrier generation sources, and thus has a low carrier density in somecases. Thus, a transistor including a channel region in the oxidesemiconductor is less likely to have a negative threshold voltage(normally-on characteristics). A highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor film has alow density of defect states and thus has a low density of trap statesin some cases. Furthermore, a highly purified intrinsic or substantiallyhighly purified intrinsic oxide semiconductor has an extremely lowoff-state current; the off-state current can be less than or equal tothe measurement limit of a semiconductor parameter analyzer, i.e., lessthan or equal to 1×10⁻¹³ A, at a voltage (drain voltage) between asource electrode and a drain electrode of from 1 V to 10 V even when anelement has a channel width W of 1×10⁶ μm and a channel length L of 10μm

Accordingly, the transistor in which the channel region is formed in thehighly purified intrinsic or substantially highly purified intrinsicoxide semiconductor can have a small variation in electricalcharacteristics and high reliability. Charge trapped by the trap statesin the oxide semiconductor takes a long time to be released and maybehave like fixed charge. Thus, the transistor whose channel region isformed in the oxide semiconductor having a high density of trap stateshas unstable electrical characteristics in some cases. Examples ofimpurities that form trap states in an oxide semiconductor are hydrogen,nitrogen, alkali metal, and alkaline earth metal.

Hydrogen contained in the insulator 106 a, the semiconductor 106 b, andthe insulator 106 c reacts with oxygen bonded to a metal atom to bewater, and also causes an oxygen vacancy in a lattice from which oxygenis released (or a portion from which oxygen is released). Due to entryof hydrogen into the oxygen vacancy, an electron serving as a carrier isgenerated in some cases. Furthermore, in some cases, bonding of part ofhydrogen to oxygen bonded to a metal atom causes generation of anelectron serving as a carrier. Hydrogen trapped by an oxygen vacancymight form a shallow donor level in a band structure of a semiconductor.Thus, a transistor including an oxide semiconductor that containshydrogen is likely to be normally on. For this reason, it is preferablethat hydrogen be reduced as much as possible in the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c. Specifically, the hydrogenconcentration in the insulator 106 a, the semiconductor 106 b, and theinsulator 106 c, which is measured by SIMS, is lower than or equal to2×10²⁰ atoms/cm³, preferably lower than or equal to 5×10¹⁹ atoms/cm³,more preferably lower than or equal to 1×10¹⁹ atoms/cm³, still morepreferably lower than or equal to 5×10¹⁸ atoms/cm³, yet more preferablylower than or equal to 1×10¹⁸ atoms/cm³, even more preferably lower thanor equal to 5×10¹⁷ atoms/cm³, and more preferably lower than or equal to1×10¹⁶ atoms/cm³.

When the insulator 106 a, the semiconductor 106 b, and the insulator 106c contain silicon or carbon, which is one of elements belonging to Group14, oxygen vacancies in the insulator 106 a and the semiconductor 106 bare increased, which makes the insulator 106 a, the semiconductor 106 b,and the insulator 106 c n-type. Thus, the concentration of silicon orcarbon (measured by SIMS) in the insulator 106 a, the semiconductor 106b, and the insulator 106 c or the concentration of silicon or carbon(measured by SIMS) in the vicinity of the interface with the insulator106 a, the semiconductor 106 b, and the insulator 106 c is set to belower than or equal to 2×10¹⁸ atoms/cm³, preferably lower than or equalto 2×10¹⁷ atoms/cm³.

In addition, the concentration of an alkali metal or alkaline earthmetal in the insulator 106 a, the semiconductor 106 b, and the insulator106 c, which is measured by SIMS, is set to be lower than or equal to1×10¹⁸ atoms/cm³, preferably lower than or equal to 2×10¹⁶ atoms/cm³. Analkali metal and an alkaline earth metal might generate carriers whenbonded to an oxide semiconductor, in which case the off-state current ofthe transistor might be increased. Thus, it is preferable to reduce theconcentration of an alkali metal or alkaline earth metal in theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c.

Furthermore, when containing nitrogen, the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c easily become n-type bygeneration of electrons serving as carriers and an increase in carrierdensity. Thus, a transistor including an oxide semiconductor film whichcontains nitrogen is likely to have normally-on characteristics. Forthis reason, nitrogen in the oxide semiconductor film is preferablyreduced as much as possible; the concentration of nitrogen which ismeasured by SIMS is preferably set to be, for example, lower than orequal to 5×10¹⁸ atoms/cm³.

FIG. 1D is an enlarged cross-sectional view illustrating the middleportion of the insulator 106 a and the semiconductor 106 b and thevicinity of the middle portion. As illustrated in FIGS. 1B and 1D,regions of the semiconductor 106 b that are in contact with theconductor 108 a and the conductor 108 b (which are denoted with dottedlines in FIGS. 1B and 1D) include a low-resistance region 109 a and alow-resistance region 109 b in some cases. The low-resistance region 109a and the low-resistance region 109 b may be formed when oxygen isextracted by the conductor 108 a and the conductor 108 b that are incontact with the semiconductor 106 b, or when a conductive material inthe conductor 108 a or the conductor 108 b is bonded to an element inthe semiconductor 106 b. The formation of the low-resistance region 109a and the low-resistance region 109 b leads to a reduction in contactresistance between the conductor 108 a or 108 b and the semiconductor106 b, whereby the transistor 10 can have high on-state current.

Although not illustrated, a low-resistance region is sometimes formed inregions of the insulator 106 c that are in contact with the conductor108 a and the conductor 108 b. In the following drawings, a dotted linedenotes a low-resistance region.

As illustrated in FIG. 1D, the semiconductor 106 b might have a smallerthickness in a region between the conductor 108 a and the conductor 108b than in regions overlapping with the conductor 108 a and the conductor108 b. The thin region is formed because part of the top surface of thesemiconductor 106 b is removed during formation of the conductor 108 aand the conductor 108 b. In formation of the conductor to be theconductor 108 a and the conductor 108 b, a region with low resistancelike the low-resistance regions 109 a and 109 b is formed on the topsurface of the semiconductor 106 b in some cases. The removal of theregion that is on the top surface of the semiconductor 106 b and betweenthe conductor 108 a and the conductor 108 b can prevent a channel frombeing formed in the low-resistance region on the top surface of thesemiconductor 106 b. In the drawings, even when a thin region is notdrawn in an enlarged view or the like, such a thin region might beformed.

Note that the three-layer structure including the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c is an example. For example,a two-layer structure not including the insulator 106 a or the insulator106 c may be employed. Alternatively, a single-layer structure notincluding the insulator 106 a and the insulator 106 c may be employed.Further alternatively, it is possible to employ an n-layer structure (nis an integer of four or more) that includes any of the insulator,semiconductor, and conductor given as examples of the insulator 106 a,the semiconductor 106 b, and the insulator 106 c.

<Structure of Oxide Semiconductor>

The structure of an oxide semiconductor is described below.

An oxide semiconductor is classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a c-axis alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline oxidesemiconductor, a nanocrystalline oxide semiconductor (nc-OS), anamorphous-like oxide semiconductor (a-like OS), and an amorphous oxidesemiconductor.

From another perspective, an oxide semiconductor is classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and an nc-OS.

An amorphous structure is generally thought to be isotropic and have nonon-uniform structure, to be metastable and not have fixed positions ofatoms, to have a flexible bond angle, and to have a short-range orderbut have no long-range order, for example.

In other words, a stable oxide semiconductor cannot be regarded as acompletely amorphous oxide semiconductor. Moreover, an oxidesemiconductor that is not isotropic (e.g., an oxide semiconductor thathas a periodic structure in a microscopic region) cannot be regarded asa completely amorphous oxide semiconductor. In contrast, an a-like OS,which is not isotropic, has an unstable structure that contains a void.Because of its instability, an a-like OS is close to an amorphous oxidesemiconductor in terms of physical properties.

<CAAC-OS>

First, a CAAC-OS is described.

A CAAC-OS is one of oxide semiconductors having a plurality of c-axisaligned crystal parts (also referred to as pellets).

Analysis of a CAAC-OS by X-ray diffraction (XRD) is described. Forexample, when the structure of a CAAC-OS including an InGaZnO₄ crystalthat is classified into the space group R-3m is analyzed by anout-of-plane method, a peak appears at a diffraction angle (2θ) ofaround 31° as shown in FIG. 2A. This peak is derived from the (009)plane of the InGaZnO₄ crystal, which indicates that crystals in theCAAC-OS have c-axis alignment, and that the c-axes are aligned in adirection substantially perpendicular to a surface over which theCAAC-OS film is formed (also referred to as a formation surface) or thetop surface of the CAAC-OS film. Note that a peak sometimes appears at a2θ of around 36° in addition to the peak at a 2θ of around 31°. The peakat a 2θ of around 36° is derived from a crystal structure that isclassified into the space group Fd-3m; thus, this peak is preferably notexhibited in a CAAC-OS.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray is incident on the CAAC-OS in a directionparallel to the formation surface, a peak appears at a 2θ of around 56°.This peak is attributed to the (110) plane of the InGaZnO₄ crystal. Whenanalysis (ϕ scan) is performed with 2θ fixed at around 56° and with thesample rotated using a normal vector to the sample surface as an axis (ϕaxis), as shown in FIG. 2B, a peak is not clearly observed. In contrast,in the case where single crystal InGaZnO₄ is subjected to ϕ scan with 2θfixed at around 56°, as shown in FIG. 2C, six peaks which are derivedfrom crystal planes equivalent to the (110) plane are observed.Accordingly, the structural analysis using XRD shows that the directionsof a-axes and b-axes are irregularly oriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction is described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in a directionparallel to the formation surface of the CAAC-OS, a diffraction pattern(also referred to as a selected-area electron diffraction pattern) shownin FIG. 2D can be obtained. In this diffraction pattern, spots derivedfrom the (009) plane of an InGaZnO₄ crystal are included. Thus, theelectron diffraction also indicates that pellets included in the CAAC-OShave c-axis alignment and that the c-axes are aligned in a directionsubstantially perpendicular to the formation surface or the top surfaceof the CAAC-OS. Meanwhile, FIG. 2E shows a diffraction pattern obtainedin such a manner that an electron beam with a probe diameter of 300 nmis incident on the same sample in a direction perpendicular to thesample surface. As shown in FIG. 2E, a ring-like diffraction pattern isobserved. Thus, the electron diffraction using an electron beam with aprobe diameter of 300 nm also indicates that the a-axes and b-axes ofthe pellets included in the CAAC-OS do not have regular orientation. Thefirst ring in FIG. 2E is considered to be derived from the (010) plane,the (100) plane, and the like of the InGaZnO₄ crystal. The second ringin FIG. 2E is considered to be derived from the (110) plane and thelike.

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is obtained using a transmission electron microscope (TEM), aplurality of pellets can be observed. However, even in thehigh-resolution TEM image, a boundary between pellets, that is, a grainboundary is not clearly observed in some cases. Thus, in the CAAC-OS, areduction in electron mobility due to the grain boundary is less likelyto occur.

FIG. 3A shows a high-resolution TEM image of a cross section of theCAAC-OS which is observed from a direction substantially parallel to thesample surface. The high-resolution TEM image is obtained with aspherical aberration corrector function. The high-resolution TEM imageobtained with a spherical aberration corrector function is particularlyreferred to as a Cs-corrected high-resolution TEM image. TheCs-corrected high-resolution TEM image can be observed with, forexample, an atomic resolution analytical electron microscope JEM-ARM200Fmanufactured by JEOL Ltd.

FIG. 3A shows pellets in which metal atoms are arranged in a layeredmanner. FIG. 3A proves that the size of a pellet is greater than orequal to 1 nm or greater than or equal to 3 nm. Therefore, the pelletcan also be referred to as a nanocrystal (nc). Furthermore, the CAAC-OScan also be referred to as an oxide semiconductor including c-axisaligned nanocrystals (CANC). A pellet reflects unevenness of a formationsurface or a top surface of the CAAC-OS, and is parallel to theformation surface or the top surface of the CAAC-OS.

FIGS. 3B and 3C show Cs-corrected high-resolution TEM images of a planeof the CAAC-OS observed from a direction substantially perpendicular tothe sample surface. FIGS. 3D and 3E are images obtained through imageprocessing of FIGS. 3B and 3C. The method of image processing is asfollows. The image in FIG. 3B is subjected to fast Fourier transform(FFT), so that an FFT image is obtained. Then, mask processing isperformed such that a range of from 2.8 nm⁻¹ to 5.0 nm⁻¹ from the originin the obtained FFT image remains. After the mask processing, the FFTimage is processed by inverse fast Fourier transform (IFFT) to obtain aprocessed image. The image obtained in this manner is called an FFTfiltering image. The FFT filtering image is a Cs-correctedhigh-resolution TEM image from which a periodic component is extracted,and shows a lattice arrangement.

In FIG. 3D, a portion where a lattice arrangement is broken is denotedwith a dashed line. A region surrounded by a dashed line is one pellet.The portion denoted with the dashed line is a junction of pellets. Thedashed line draws a hexagon, which means that the pellet has a hexagonalshape. Note that the shape of the pellet is not always a regular hexagonbut is a non-regular hexagon in many cases.

In FIG. 3E, a dotted line denotes a boundary between a region with aregular lattice arrangement and another region with a regular latticearrangement. A clear crystal grain boundary cannot be observed even inthe vicinity of the dotted line. When a lattice point in the vicinity ofthe dotted line is regarded as a center and surrounding lattice pointsare joined, a distorted hexagon, pentagon, and/or heptagon can beformed, for example. That is, a lattice arrangement is distorted so thatformation of a crystal grain boundary is inhibited. This is probablybecause the CAAC-OS can tolerate distortion owing to a low density ofthe atomic arrangement in an a-b plane direction, an interatomic bonddistance changed by substitution of a metal element, and the like.

As described above, the CAAC-OS has c-axis alignment, its pellets(nanocrystals) are connected in an a-b plane direction, and the crystalstructure has distortion. For this reason, the CAAC-OS can also bereferred to as an oxide semiconductor including a c-axis-aligneda-b-plane-anchored (CAA) crystal.

The CAAC-OS is an oxide semiconductor with high crystallinity. Entry ofimpurities, formation of defects, or the like might decrease thecrystallinity of an oxide semiconductor. This means that the CAAC-OS hassmall amounts of impurities and defects (e.g., oxygen vacancies).

Note that the impurity means an element other than the main componentsof the oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, an element (specifically, siliconor the like) having higher strength of bonding to oxygen than a metalelement included in an oxide semiconductor extracts oxygen from theoxide semiconductor, which results in disorder of the atomic arrangementand reduced crystallinity of the oxide semiconductor. A heavy metal suchas iron or nickel, argon, carbon dioxide, or the like has a large atomicradius (or molecular radius), and thus disturbs the atomic arrangementof the oxide semiconductor and decreases crystallinity.

The characteristics of an oxide semiconductor having impurities ordefects might be changed by light, heat, or the like. Impuritiesincluded in the oxide semiconductor might serve as carrier traps orcarrier generation sources, for example. For example, oxygen vacancy inthe oxide semiconductor might serve as a carrier trap or serve as acarrier generation source when hydrogen is captured therein.

The CAAC-OS having small amounts of impurities and oxygen vacancy is anoxide semiconductor film with a low carrier density; specifically, lowerthan 8×10¹¹/cm³, preferably lower than 1×10¹¹/cm³, and furtherpreferably lower than 1×10¹⁰/cm³ and higher than or equal to1×10⁻⁹/cm³). Such an oxide semiconductor is referred to as a highlypurified intrinsic or substantially highly purified intrinsic oxidesemiconductor. A CAAC-OS has a low impurity concentration and a lowdensity of defect states. Thus, the CAAC-OS can be referred to as anoxide semiconductor having stable characteristics.

<nc-OS>

Next, an nc-OS is described.

Analysis of an nc-OS by XRD is described. When the structure of an nc-OSis analyzed by an out-of-plane method, a peak indicating orientationdoes not appear. That is, a crystal of an nc-OS does not haveorientation.

For example, when an electron beam with a probe diameter of 50 nm isincident on a 34-nm-thick region of thinned nc-OS including an InGaZnO₄crystal in a direction parallel to the formation surface, a ring-shapeddiffraction pattern (a nanobeam electron diffraction pattern) shown inFIG. 4A is observed. FIG. 4B shows a diffraction pattern obtained whenan electron beam with a probe diameter of 1 nm is incident on the samesample. As shown in FIG. 4B, a plurality of spots are observed in aring-like region. In other words, ordering in an nc-OS is not observedwith an electron beam with a probe diameter of 50 nm but is observedwith an electron beam with a probe diameter of 1 nm.

Furthermore, an electron diffraction pattern in which spots are arrangedin an approximately hexagonal shape is observed in some cases as shownin FIG. 4C when an electron beam having a probe diameter of 1 nm isincident on a region with a thickness of less than 10 nm. This meansthat an nc-OS has a well-ordered region, i.e., a crystal, in the rangeof less than 10 nm in thickness. Note that an electron diffractionpattern having regularity is not observed in some regions becausecrystals are aligned in various directions.

FIG. 4D shows a Cs-corrected high-resolution TEM image of a crosssection of an nc-OS observed from the direction substantially parallelto the formation surface. In a high-resolution TEM image, an nc-OS has aregion in which a crystal part is observed, such as the part indicatedby additional lines in FIG. 4D, and a region in which a crystal part isnot clearly observed. In most cases, the size of a crystal part includedin the nc-OS is greater than or equal to 1 nm and less than or equal to10 nm, or specifically, greater than or equal to 1 nm and less than orequal to 3 nm. Note that an oxide semiconductor including a crystal partwhose size is greater than 10 nm and less than or equal to 100 nm issometimes referred to as a microcrystalline oxide semiconductor. In ahigh-resolution TEM image of the nc-OS, for example, a grain boundary isnot clearly observed in some cases. Note that there is a possibilitythat the origin of the nanocrystal is the same as that of a pellet in aCAAC-OS. Therefore, a crystal part of the nc-OS may be referred to as apellet in the following description.

As described above, in the nc-OS, a microscopic region (for example, aregion with a size greater than or equal to 1 nm and less than or equalto 10 nm, in particular, a region with a size greater than or equal to 1nm and less than or equal to 3 nm) has a periodic atomic arrangement.There is no regularity of crystal orientation between different pelletsin the nc-OS. Thus, the orientation of the whole film is not ordered.Accordingly, the nc-OS cannot be distinguished from an a-like OS or anamorphous oxide semiconductor, depending on an analysis method.

Since there is no regularity of crystal orientation between the pellets(nanocrystals) as mentioned above, the nc-OS can also be referred to asan oxide semiconductor including random aligned nanocrystals (RANC) oran oxide semiconductor including non-aligned nanocrystals (NANC).

The nc-OS is an oxide semiconductor that has high regularity as comparedwith an amorphous oxide semiconductor. Therefore, the nc-OS is likely tohave a lower density of defect states than an a-like OS and an amorphousoxide semiconductor. Note that there is no regularity of crystalorientation between different pellets in the nc-OS. Therefore, the nc-OShas a higher density of defect states than the CAAC-OS.

<a-like OS>

An a-like OS has a structure between those of the nc-OS and theamorphous oxide semiconductor.

FIGS. 5A and 5B are high-resolution cross-sectional TEM images of ana-like OS. FIG. 5A is the high-resolution cross-sectional TEM image ofthe a-like OS at the start of the electron irradiation. FIG. 5B is thehigh-resolution cross-sectional TEM image of a-like OS after theelectron (e⁻) irradiation at 4.3×10⁸ e⁻/nm². FIGS. 5A and 5B show thatstripe-like bright regions extending vertically are observed in thea-like OS from the start of the electron irradiation. It can be alsofound that the shape of the bright region changes after the electronirradiation. Note that the bright region is presumably a void or alow-density region.

The a-like OS has an unstable structure because it contains a void. Toverify that an a-like OS has an unstable structure as compared with aCAAC-OS and an nc-OS, a change in structure caused by electronirradiation is described below.

An a-like OS, an nc-OS, and a CAAC-OS are prepared as samples. Each ofthe samples is an In—Ga—Zn oxide.

First, a high-resolution cross-sectional TEM image of each sample isobtained. The high-resolution cross-sectional TEM images show that allthe samples have crystal parts.

It is known that a unit cell of an InGaZnO₄ crystal has a structure inwhich nine layers including three In—O layers and six Ga—Zn—O layers arestacked in the c-axis direction. The distance between the adjacentlayers is equivalent to the lattice spacing on the (009) plane (alsoreferred to as d value). The value is calculated to be 0.29 nm fromcrystal structural analysis. Accordingly, a portion where the spacingbetween lattice fringes is greater than or equal to 0.28 nm and lessthan or equal to 0.30 nm is regarded as a crystal part of InGaZnO₄ inthe following description. Each of lattice fringes corresponds to thea-b plane of the InGaZnO₄ crystal.

FIG. 6 shows change in the average size of crystal parts (at 22 pointsto 30 points) in each sample. Note that the crystal part sizecorresponds to the length of a lattice fringe. FIG. 6 indicates that thecrystal part size in the a-like OS increases with an increase in thecumulative electron dose in obtaining TEM images, for example. As shownin FIG. 6, a crystal part of approximately 1.2 nm (also referred to asan initial nucleus) at the start of TEM observation grows to a size ofapproximately 1.9 nm at a cumulative electron (e⁻) dose of 4.2×10⁸e⁻/nm². In contrast, the crystal part size in the nc-OS and the CAAC-OSshows little change from the start of electron irradiation to acumulative electron dose of 4.2×10⁸ e/nm². As shown in FIG. 6, thecrystal part sizes in an nc-OS and a CAAC-OS are approximately 1.3 nmand approximately 1.8 nm, respectively, regardless of the cumulativeelectron dose. For the electron beam irradiation and TEM observation, aHitachi H-9000NAR transmission electron microscope was used. Theconditions of electron beam irradiation were as follows: theaccelerating voltage was 300 kV; the current density was 6.7×10⁵e⁻/(nm²·s); and the diameter of irradiation region was 230 nm.

In this manner, growth of the crystal part in the a-like OS is sometimesinduced by electron irradiation. In contrast, in the nc-OS and theCAAC-OS, growth of the crystal part is hardly induced by electronirradiation. Therefore, the a-like OS has an unstable structure ascompared with the nc-OS and the CAAC-OS.

The a-like OS has a lower density than the nc-OS and the CAAC-OS becauseit contains a void. Specifically, the density of the a-like OS is higherthan or equal to 78.6% and lower than 92.3% of the density of the singlecrystal oxide semiconductor having the same composition. The density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 92.3% andlower than 100% of the density of the single crystal oxide semiconductorhaving the same composition. Note that it is difficult to deposit anoxide semiconductor having a density of lower than 78% of the density ofthe single crystal oxide semiconductor.

For example, in the case of an oxide semiconductor having an atomicratio of In:Ga:Zn=1:1:1, the density of single crystal InGaZnO₄ with arhombohedral crystal structure is 6.357 g/cm³. Accordingly, in the caseof the oxide semiconductor having an atomic ratio of In: Ga:Zn=1:1:1,the density of the a-like OS is higher than or equal to 5.0 g/cm³ andlower than 5.9 g/cm³. For example, in the case of the oxidesemiconductor having an atomic ratio of In: Ga:Zn=1:1:1, the density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm³and lower than 6.3 g/cm³.

Note that in the case where an oxide semiconductor having a certaincomposition does not exist in a single crystal structure, single crystaloxide semiconductors with different compositions are combined at anadequate ratio, which makes it possible to calculate density equivalentto that of a single crystal oxide semiconductor with the desiredcomposition. The density of a single crystal oxide semiconductor havingthe desired composition can be calculated using a weighted averageaccording to the combination ratio of the single crystal oxidesemiconductors with different compositions. Note that it is preferableto use as few kinds of single crystal oxide semiconductors as possibleto calculate the density.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stackedlayer including two or more films of an amorphous oxide semiconductor,an a-like OS, an nc-OS, and a CAAC-OS, for example.

<Substrate, Insulator, Conductor>

Components other than the semiconductor of the transistor 10 aredescribed in detail below.

As the substrate 100, an insulator substrate, a semiconductor substrate,or a conductor substrate may be used, for example. As the insulatorsubstrate, a glass substrate, a quartz substrate, a sapphire substrate,a stabilized zirconia substrate (e.g., an yttria-stabilized zirconiasubstrate), or a resin substrate is used, for example. As thesemiconductor substrate, a single material semiconductor substrateformed using silicon, germanium, or the like or a semiconductorsubstrate formed using silicon carbide, silicon germanium, galliumarsenide, indium phosphide, zinc oxide, gallium oxide, or the like isused, for example. A semiconductor substrate in which an insulatorregion is provided in the above semiconductor substrate, e.g., a siliconon insulator (SOI) substrate or the like is used. As the conductorsubstrate, a graphite substrate, a metal substrate, an alloy substrate,a conductive resin substrate, or the like is used. A substrate includinga metal nitride, a substrate including a metal oxide, or the like isused. An insulator substrate provided with a conductor or asemiconductor, a semiconductor substrate provided with a conductor or aninsulator, a conductor substrate provided with a semiconductor or aninsulator, or the like is used. Alternatively, any of these substratesover which an element is provided may be used. As the element providedover the substrate, a capacitor, a resistor, a switching element, alight-emitting element, a memory element, or the like is used.

Alternatively, a flexible substrate resistant to heat treatmentperformed in manufacture of the transistor may be used as the substrate100. As a method for providing the transistor over a flexible substrate,there is a method in which the transistor is formed over a non-flexiblesubstrate and then the transistor is separated and transferred to thesubstrate 100 which is a flexible substrate. In that case, a separationlayer is preferably provided between the non-flexible substrate and thetransistor. As the substrate 100, a sheet, a film, or a foil containinga fiber may be used. The substrate 100 may have elasticity. Thesubstrate 100 may have a property of returning to its original shapewhen bending or pulling is stopped. Alternatively, the substrate 100 mayhave a property of not returning to its original shape. The thickness ofthe substrate 100 is, for example, greater than or equal to 5 μm andless than or equal to 700 μm, preferably greater than or equal to 10 μmand less than or equal to 500 μm, or further preferably greater than orequal to 15 μm and less than or equal to 300 μm. When the substrate 100has a small thickness, the weight of the semiconductor device can bereduced. When the substrate 100 has a small thickness, even in the caseof using glass or the like, the substrate 100 may have elasticity or aproperty of returning to its original shape when bending or pulling isstopped. Therefore, an impact applied to the semiconductor device overthe substrate 100, which is caused by dropping or the like, can bereduced. That is, a durable semiconductor device can be provided.

For the substrate 100 which is a flexible substrate, metal, an alloy,resin, glass, or fiber thereof can be used, for example. The flexiblesubstrate 100 preferably has a lower coefficient of linear expansionbecause deformation due to an environment is suppressed. The flexiblesubstrate 100 is formed using, for example, a material whose coefficientof linear expansion is lower than or equal to 1×10⁻³/K, lower than orequal to 5×10⁻⁵/K, or lower than or equal to 1×10⁻⁵/K. Examples of theresin include polyester, polyolefin, polyamide (e.g., nylon or aramid),polyimide, polycarbonate, and acrylic. In particular, aramid ispreferably used for the flexible substrate 100 because of its lowcoefficient of linear expansion.

As the insulator 101, an insulator having a function of blockinghydrogen or water is used. Hydrogen or water in the insulator providednear the insulator 106 a, the semiconductor 106 b, and the insulator 106c is one of the factors of carrier generation in the insulator 106 a,the semiconductor 106 b, and the insulator 106 c. As a result, thereliability of the transistor 10 might decrease. Particularly when thesubstrate 100 is a substrate that is provided with a silicon-basedsemiconductor element such as a switching element, hydrogen used toterminate a dangling bond in the semiconductor element might be diffusedto the transistor 10. In that case, the insulator 101 that has afunction of blocking hydrogen or water can inhibit diffusion of hydrogenor water from below the transistor 10, increasing the reliability of thetransistor 10. It is preferable that the insulator 101 be less permeableto hydrogen or water than the insulator 105 and the insulator 104.

The insulator 101 preferably has a function of blocking oxygen. Ifoxygen diffused from the insulator 104 can be blocked by the insulator101, oxygen can be effectively supplied from the insulator 104 or thelike to the insulator 106 a, the semiconductor 106 b, and the insulator106 c.

The insulator 101 can be formed using, for example, aluminum oxide,aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide,yttrium oxynitride, hafnium oxide, or hafnium oxynitride. The use ofsuch a material enables the insulator 101 to function as an insulatingfilm blocking diffusion of oxygen, hydrogen, or water. The insulator 101can be formed using, for example, silicon nitride or silicon nitrideoxide. The use of such a material enables the insulator 101 to functionas an insulating film blocking diffusion of hydrogen or water.

At least part of the conductor 102 preferably overlaps with thesemiconductor 106 b in a region where the semiconductor 106 b ispositioned between the conductor 108 a and the conductor 108 b. Theconductor 102 functions as a back gate of the transistor 10. Theconductor 102 can control the threshold voltage of the transistor 10.The conductor 102 can also be used for injecting electric charges to theinsulator 103. Control of the threshold voltage can prevent thetransistor 10 from being turned on when voltage applied to the gate(conductor 114) of the transistor 10 is low, e.g., 0 V or lower. Thus,the electrical characteristics of the transistor 10 can be easily madenormally-off characteristics.

As the conductor 102, a conductor including a region containing tungstenand one or more elements selected from silicon, carbon, germanium, tin,aluminum, and nickel is used. Specifically, a conductor containingtungsten and silicon is preferable. Furthermore, the conductor 102preferably includes a region with a silicon concentration measured byRBS of greater than or equal to 5 atomic % and less than or equal to 70atomic %, ϕνρτηερ πρεϕεραβλψ ιχλνδεσ ααρεγιov ωιτη α σιλιχovχovχεcτρατιov oϕ γρεατερ τηαv oρ εθναλ τo 10 ατoμιχ% αvδ λεσσ τηαv oρεθναλ τo 60 ατoμιχ%. The conductor 102 may have a single layer or astacked layer formed of an alloy or a compound, for example.

The conductor 102 preferably includes a region containing silicon andoxygen on the surface of the conductor 102, and the thickness of theregion is preferably greater than or equal to 0.2 nm and less than orequal to 20 nm. The region contains a large amount of silicon andoxygen, in which case the region can function as an insulator. Theregion functions as a barrier layer, whereby oxidation of the entireconductor can be prevented.

The conductor 102 may be formed by a sputtering method. Alternatively,the conductor 102 may be formed by a metal chemical vapor deposition(MCVD) method.

The insulator 105 is provided to cover the conductor 102. An insulatorsimilar to the insulator 104 or the insulator 112 to be described latercan be used as the insulator 105.

The insulator 103 is provided to cover the insulator 105. The insulator103 preferably has a function of blocking oxygen. Providing theinsulator 103 can prevent extraction of oxygen from the insulator 104 bythe conductor 102. Accordingly, oxygen can be effectively supplied fromthe insulator 104 to the insulator 106 a, the semiconductor 106 b, andthe insulator 106 c.

For the insulator 103, for example, an oxide or a nitride containingboron, aluminum, silicon, scandium, titanium, gallium, yttrium,zirconium, indium, lanthanum, cerium, neodymium, hafnium, or thalliummay be used. It is preferable to use hafnium oxide or aluminum oxide.

Of the insulators 105, 103, and 104, the insulator 103 preferablyincludes an electron trap region. When the insulators 105 and 104 have afunction of inhibiting release of electrons, the electrons trapped inthe insulator 103 might behave as if they are negative fixed charge.

The amounts of hydrogen and water contained in the insulator 104 arepreferably small. The insulator 104 preferably contains excess oxygen.For example, the insulator 104 may be formed to have a single-layerstructure or a stacked-layer structure including an insulator containingboron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon,phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium,lanthanum, neodymium, hafnium, or tantalum. For example, aluminum oxide,magnesium oxide, silicon oxide, silicon oxynitride, silicon nitrideoxide, silicon nitride, gallium oxide, germanium oxide, yttrium oxide,zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, ortantalum oxide may be used for the insulator 104. Preferably, siliconoxide or silicon oxynitride is used.

The amounts of hydrogen and water contained in the insulator 104 arepreferably small. For example, the number of water molecules releasedfrom the insulator 104 is preferably greater than or equal to 1.0×10¹³molecules/cm² and less than or equal to 1.4×10¹⁶ molecules/cm², morepreferably greater than or equal to 1.0×10¹³ molecules/cm² and less thanor equal to 4.0×10¹⁵ molecules/cm², still more preferably greater thanor equal to 1.0×10¹³ molecules/cm² and less than or equal to 2.0×10¹⁵molecules/cm² in thermal desorption spectroscopy (TDS) analysis in therange of surface temperatures from 100° C. to 700° C. or from 100° C. to500° C. The number of hydrogen molecules released from the insulator 104is preferably greater than or equal to 1.0×10¹³ molecules/cm² and lessthan or equal to 1.2×10¹⁵ molecules/cm², more preferably greater than orequal to 1.0×10¹³ molecules/cm² and less than or equal to 9.0×10¹⁴molecules/cm² in TDS in the range of surface temperatures from 100° C.to 700° C. or from 100° C. to 500° C. The details of the method formeasuring the number of released molecules using TDS will be describedlater.

Impurities such as water and hydrogen form defect states in theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c, andparticularly in the semiconductor 106 b, which causes a change inelectrical characteristics of the transistor. Accordingly, by reducingthe amounts of water and hydrogen contained in the insulator 104 underthe insulator 106 a, the semiconductor 106 b, and the insulator 106 c,formation of defect states formed by supply of water, hydrogen, and thelike from the insulator 104 to the semiconductor 106 b can besuppressed. The use of such an oxide semiconductor with a reduceddensity of defect states makes it possible to provide a transistor withstable electrical characteristics.

The insulator 104 is preferably formed by a plasma enhanced CVD (PECVD)method because a high-quality film can be obtained at a relatively lowtemperature. However, in the case where a silicon oxide film, forexample, is formed by a PECVD method, silicon hydride or the like isoften used as a source gas, and as a result, hydrogen, water, or thelike enters the insulator 104 during the formation of the insulator 104.For this reason, a silicon halide is preferably used as the source gasfor the formation of the insulator 104 of this embodiment. Here, silicontetrafluoride (SiF₄), silicon tetrachloride (SiCl₄), silicon trichloride(SiHCl₃), dichlorosilane (SiH₂Cl₂), silicon tetrabromide (SiBr₄) or thelike can be used as silicon halide. In particular, silicon tetrafluoride(SiF₄) is preferably used.

When a silicon halide is used as the source gas for the formation of theinsulator 104, a silicon hydride may be used in addition to the siliconhalide. In that case, the amounts of hydrogen and water in the insulator104 can be reduced as compared with the case where only a siliconhydride is used as the source gas, and the deposition rate can beimproved as compared with the case where only a silicon halide is usedas the source gas. For example, SiF₄ and SiH₄ may be used as the sourcegas for the formation of the insulator 104. Note that the flow ratio ofSiF₄ to SiH₄ may be determined as appropriate in view of the amounts ofwater and hydrogen in the insulator 104 and the deposition rate.

The insulator 104 preferably contains excess oxygen. Such insulator 104makes it possible to supply oxygen from the insulator 104 to theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c. Thesupplied oxygen can reduce oxygen vacancies which are to be defects inthe insulator 106 a, the semiconductor 106 b, and the insulator 106 cwhich are oxide semiconductors. As a result, the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c can be oxide semiconductorswith a low density of defect states and stable characteristics.

In this specification and the like, excess oxygen refers to oxygen inexcess of the stoichiometric composition, for example. Alternatively,excess oxygen refers to oxygen released from a film or layer containingthe excess oxygen by heating, for example. Excess oxygen can move insidea film or a layer. Excess oxygen moves between atoms in a film or alayer, or replaces oxygen that is a constituent of a film or a layer andmoves like a billiard ball, for example.

The insulator 104 including excess oxygen releases oxygen molecules, thenumber of which is greater than or equal to 1.0×10¹⁴ molecules/cm² andless than or equal to 1.0×10¹⁶ molecules/cm², preferably greater than orequal to 1.0×10¹⁵ molecules/cm² and less than or equal to 5.0×10¹⁵molecules/cm² in TDS in the range of surface temperatures of 100° C. to700° C. or 100° C. to 500° C.

A method for measuring the amount of released molecules using TDS isdescribed below by taking the amount of released oxygen as an example.

The total amount of released gas from a measurement sample in TDSanalysis is proportional to the integral value of the ion intensity ofthe released gas. Then, comparison with a reference sample is made,whereby the total amount of released gas can be calculated.

For example, the number of released oxygen molecules (N_(O2)) from ameasurement sample can be calculated according to the following equationusing the TDS results of a silicon substrate containing hydrogen at apredetermined density, which is a reference sample, and the TDS resultsof the measurement sample. Here, all gases having a mass-to-charge ratioof 32 which are obtained in the TDS analysis are assumed to originatefrom an oxygen molecule. Note that CH₃OH, which is a gas having themass-to-charge ratio of 32, is not taken into consideration because itis unlikely to be present. Further, an oxygen molecule including anoxygen atom having a mass number of 17 or 18 which is an isotope of anoxygen atom is also not taken into consideration because the proportionof such a molecule in the natural world is minimal.

N_(O2)═N_(H2)/S_(H2)×S_(O2)×α

The value N_(H2) is obtained by conversion of the amount of hydrogenmolecules desorbed from the standard sample into densities. The valueS_(H2) is the integral value of ion intensity when the standard sampleis subjected to the TDS analysis. Here, the reference value of thestandard sample is set to N_(H2)/S_(H2). S_(O2) is the integral value ofion intensity when the measurement sample is analyzed by TDS. The valuea is a coefficient affecting the ion intensity in the TDS. Refer toJapanese Published Patent Application No. H6-275697 for details of theabove formula. The amount of released oxygen was measured with a thermaldesorption spectroscopy apparatus produced by ESCO Ltd., EMD-WA1000 S/W,using a silicon substrate containing certain amount of hydrogen atoms asthe reference sample.

Furthermore, in the TDS, oxygen is partly detected as an oxygen atom.The ratio between oxygen molecules and oxygen atoms can be calculatedfrom the ionization rate of the oxygen molecules. Note that since theabove a includes the ionization rate of the oxygen molecules, the amountof the released oxygen atoms can also be estimated through themeasurement of the amount of the released oxygen molecules.

Note that N_(O2) is the amount of the released oxygen molecules. Theamount of released oxygen in the case of being converted into oxygenatoms is twice the amount of the released oxygen molecules.

Furthermore, the insulator from which oxygen is released by heattreatment may contain a peroxide radical. Specifically, the spin densityattributed to the peroxide radical is greater than or equal to 5×10¹⁷spins/cm³. Note that the insulator containing a peroxide radical mayhave an asymmetric signal with a g factor of approximately 2.01 in ESR.

The insulator 104 may have a function of preventing diffusion ofimpurities from the substrate 100.

As described above, the top surface or the bottom surface of thesemiconductor 106 b preferably has high planarity. Thus, to improve theplanarity, the top surface of the insulator 104 may be subjected toplanarization treatment performed by a chemical mechanical polishing(CMP) method or the like.

The conductors 108 a and 108 b serve as a source electrode and a drainelectrode of the transistor 10.

The conductors 108 a and 108 b may be formed in a manner similar to thatfor the conductor 102.

At least part of the conductors 108 a and 108 b preferably overlaps withthe insulator 112 with the insulator 106 c provided therebetween in aregion not overlapping with the conductor 114. For example, theinsulator 106 c covers most of the top surfaces of the conductors 108 aand 108 b as illustrated in FIG. 1B. This structure can inhibitextraction of oxygen from the insulator 112 at the top surfaces of theconductors 108 a and 108 b. Accordingly, oxygen can be effectivelysupplied from the insulator 112 to the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c.

The insulator 112 can function as a gate insulating film of thetransistor 10. Like the insulator 104, the insulator 112 may be aninsulator containing excess oxygen. Such insulator 112 makes it possibleto supply oxygen from the insulator 112 to the insulator 106 a, thesemiconductor 106 b, and the insulator 106.

The insulator 112 may be formed to have a single-layer structure or astacked-layer structure including an insulator containing, for example,boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon,phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium,lanthanum, neodymium, hafnium, or tantalum. The insulator 112 may beformed using, for example, aluminum oxide, magnesium oxide, siliconoxide, silicon oxynitride, silicon nitride oxide, silicon nitride,gallium oxide, germanium oxide, yttrium oxide, zirconium oxide,lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide.

The conductor 114 can function as a gate electrode of the transistor 10.The conductor 114 may be formed in a manner similar to that for theconductor 102.

Here, as illustrated in FIG. 1C, the semiconductor 106 b can beelectrically surrounded by an electric field of the conductor 102 andthe conductor 114 (a structure in which a semiconductor is electricallysurrounded by an electric field of a conductor is referred to as asurrounded channel (s-channel) structure). Therefore, a channel isformed in the entire semiconductor 106 b (the top, bottom, and sidesurfaces). In the s-channel structure, a large amount of current canflow between a source and a drain of the transistor, so that an on-statecurrent can be increased.

The s-channel structure is suitable for a miniaturized transistorbecause a high on-state current can be obtained. A semiconductor deviceincluding the miniaturized transistor can have a high integration degreeand high density. For example, the channel length of the transistor ispreferably less than or equal to 40 nm, more preferably less than orequal to 30 nm, still more preferably less than or equal to 20 nm andthe channel width of the transistor is preferably less than or equal to40 nm, more preferably less than or equal to 30 nm, still morepreferably less than or equal to 20 nm.

The insulator 116 can function as a protective insulating film of thetransistor 10. Here, the thickness of the insulator 116 can be greaterthan or equal to 1 nm, or greater than or equal to 20 nm, for example.It is preferable that at least part of the insulator 116 be in contactwith the top surface of the insulator 104 and the insulator 112.

The insulator 116 may be formed so as to have a single-layer structureor a layered structure including an insulator containing, for example,carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon,phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium,lanthanum, neodymium, hafnium, or tantalum. The insulator 116 preferablyhas a blocking effect against oxygen, hydrogen, water, alkali metal,alkaline earth metal, and the like. As such an insulator, for example, anitride insulating film can be used. The nitride insulating film isformed using silicon nitride, silicon nitride oxide, aluminum nitride,aluminum nitride oxide, or the like. Note that instead of the nitrideinsulating film, an oxide insulating film having a blocking effectagainst oxygen, hydrogen, water, and the like, may be provided. As theoxide insulating film, an aluminum oxide film, an aluminum oxynitridefilm, a gallium oxide film, a gallium oxynitride film, an yttrium oxidefilm, an yttrium oxynitride film, a hafnium oxide film, and a hafniumoxynitride film can be given.

Here, it is preferable that the insulator 116 be formed by a sputteringmethod and it is further preferable that the insulator 116 be formed bya sputtering method in an atmosphere containing oxygen. When theinsulator 116 is formed by a sputtering method, oxygen is added to thevicinity of a surface of the insulator 104 or a surface of the insulator112 (after the formation of the insulator 116, an interface between theinsulator 116 and the insulator 104 or the insulator 112) at the sametime as the formation.

It is preferable that the insulator 116 be less permeable to oxygen thanthe insulator 104 and the insulator 112 and have a blocking effectagainst oxygen. Providing the insulator 116 can prevent oxygen frombeing externally released to above the insulator 116 at the time ofsupply of oxygen from the insulator 104 and the insulator 112 to theinsulator 106 a, the semiconductor 106 b, and the insulator 106 c.

Aluminum oxide is preferably used as the insulator 116 because it ishighly effective in preventing transmission of both oxygen andimpurities such as hydrogen and moisture.

An oxide that can be used for the insulator 106 a or the insulator 106 ccan be used for the insulator 116. Such an oxide can be relativelyeasily formed by a sputtering method, and thus, oxygen can beeffectively added to the insulator 104 and the insulator 112. Theinsulator 116 is preferably formed with an oxide insulator containingIn, such as an In-A1 oxide, an In—Ga oxide, or an In—Ga—Zn oxide. Anoxide insulator containing In is favorably used for the insulator 116because the number of particles generated at the time of the depositionby a sputtering method is small.

The insulator 118 functions as the interlayer insulating film. Theinsulator 118 may be formed in a similar manner to that of the insulator105.

The conductor 120 a and the conductor 120 b function as wiringselectrically connected to the source electrode and the drain electrodeof the transistor 10. As the conductor 120 a and the conductor 120 b,the conductor that can be used for the conductor 108 a and the conductor108 b is used. Thus, the conductor 120 a and the conductor 120 b canfunction as wirings having heat resistance and oxidation resistance.

With the above structure, a transistor including conductors having heatresistance and oxidation resistance can be provided. A transistor withstable electrical characteristics can be provided. Alternatively, thetransistor having a small leakage current in an off state can beprovided. Alternatively, the transistor with high frequencycharacteristics can be provided. Alternatively, the transistor withnormally-off electrical characteristics can be provided.

Alternatively, the transistor having a small subthreshold swing valuecan be provided. Alternatively, the transistor having high reliabilitycan be provided.

<Modification Example of Transistor>

Modification examples of the transistor 10 are described below withreference to FIGS. 7A to 7C to FIGS. 12A to 12D. FIGS. 7A to 7C to FIGS.12A to 12D are cross-sectional views in the channel length direction andthose in the channel width direction like FIGS. 1B and 1C.

A transistor 12 illustrated in FIGS. 7A and 7B is different from thetransistor 10 in that the transistor 12 includes a region 108 ccontaining silicon and oxygen on a surface of the conductor 108 a and aregion 108 d containing silicon and oxygen on a surface of the conductor108 b. FIG. 7C illustrates an enlarged view of a portion surrounded by adashed-dotted line in FIG. 7A.

Oxygen is supplied to the surfaces of the conductor 108 a and theconductor 108 b, and silicon in the conductor 108 a and the conductor108 b is segregated to the surfaces of the conductor 108 a and theconductor 108 b to bond with oxygen, whereby the region 108 c and theregion 108 d are formed. The region 108 c and the region 108 d canfunction as insulators in some cases. Therefore, the region 108 cfunctioning as an insulator between the conductor 114 and the conductor108 a in FIG. 7C reduces parasitic capacitance between the conductor 114and the conductor 108 a, for example. In the same manner, the region 108d reduces parasitic capacitance between the conductor 114 and theconductor 108 b. Electrical characteristics of the transistor 12 can beimproved by reducing parasitic capacitance.

Furthermore, the region 108 c and the region 108 d functioning asinsulators can reduce leakage current between the conductors 108 a and108 b and the conductor 114.

When the region 108 c and the region 108 d are too thin, the regionscannot have a sufficient function as insulators. When the region 108 cand the region 108 d are too thick, the areas of the regions of theconductors 108 a and 108 b decrease and the electric resistance of theconductor 108 a and the conductor 108 b increases. For these reasons,the thicknesses of the region 108 c and the region 108 d are preferablygreater than or equal to 0.2 nm and less than or equal to 20 nm.

The region 108 c and the region 108 d are formed spontaneously byexposing the conductors to air in some cases. Alternatively, the region108 c and the region 108 d can be formed intentionally. As a method forforming the region 108 c and the region 108 d intentionally, heattreatment is performed in an oxidation atmosphere, for example.Alternatively, plasma treatment is performed in an atmosphere containingoxygen. As the plasma treatment, a high-density plasma treatment usingpower source with a frequency of 2.45 GHz is preferably performed, forexample. At this time, oxygen vacancies in the semiconductor 106 b maybe filled by adding oxygen to the semiconductor 106 b.

A transistor 16 illustrated in FIGS. 8A and 8B differs from thetransistor 10 in that the conductor 102, the insulator 101, and theinsulator 105 are not provided.

A transistor 18 illustrated in FIGS. 8C and 8D is different from thetransistor 10 in that the conductor 114 is connected to the conductor102 through an opening formed in the insulator 112, the insulator 106 c,the insulator 104, the insulator 103, the insulator 105, and the like.

A transistor 20 illustrated in FIGS. 9A and 9B differs from thetransistor 10 in that an insulator 107 is provided over the insulator101 and the conductor 102 is embedded in an opening in the insulator107. The insulator 107 may be formed with the insulator that can be usedas the insulator 105. It is preferable that top surfaces of theinsulator 107 and the conductor 102 be subjected to planarizationtreatment such as a CMP method in order to improve its planarity. Withthis structure, the planarity of a surface on which the semiconductor106 b is formed is not degraded even when the conductor 102 serving as aback gate is provided. Accordingly, the carrier mobility can be improvedand the on-state current of the transistor 20 can be increased.Moreover, since there is no surface unevenness of the insulator 104caused by the shape of the conductor 102, leakage current generatedbetween the conductor 108 a or 108 b serving as a drain and theconductor 102 through an uneven portion of the insulator 104 can bereduced. Thus, the off-state current of the transistor 20 can bereduced.

In a transistor 22 illustrated in FIGS. 10A and 10B, an insulator 117 isformed over the conductor 108 a, the conductor 108 b, and the insulator104, and an opening reaching the semiconductor 106 b is formed in theinsulator 117. The transistor 22 is different from the transistor 10 inthat the insulator 106 c, the insulator 112, and the conductor 114 areformed to fill the opening. The conductor 108 a and the conductor 108 bare separated by the opening. In the transistor 22, the conductor 114which can function as a gate electrode is formed in a self-alignedmanner to fill the opening formed in the insulator 117; thus, thetransistor 22 can be called a trench gate self-aligned (TGSA) s-channelFET.

The insulator 117 may be formed with the insulator that can be used asthe insulator 104. The top surface of the insulator 117 may beplanarized by a CMP method or the like.

In the transistor 22, the insulator 117, the insulator 106 c, and theinsulator 112 are provided between the conductor 108 a and the conductor114 and between the conductor 108 b and the conductor 114. Accordingly,the distance between a top surface of the conductor 108 a and a bottomsurface of the conductor 114 and the distance between a top surface ofthe conductor 108 b and the bottom surface of the conductor 114 can beincreased by the thickness of the insulator 117. Therefore, parasiticcapacitance generated in a region where the conductor 114 and theconductors 108 a and 108 b overlap each other can be reduced. Thereduction in the parasitic capacitance enables the switching speed ofthe transistor to be improved; thus, a transistor with high frequencycharacteristics can be provided.

A transistor 24 illustrated in FIGS. 10C and 10D differs from thetransistor 22 in that top surfaces of the insulator 117, the insulator106 c, the insulator 112, and the conductor 114 are substantiallyaligned with one another and flat. In order to form the transistor 24 tohave such a structure, the top surfaces of the insulator 117, theinsulator 106 c, the insulator 112, and the conductor 114 are planarizedby a CMP method or the like.

In this structure, there is hardly any region where the conductor 114and the conductors 108 a and 108 b overlap with each other; as a result,parasitic capacitance in the transistor 24 between a gate and a sourceand between the gate and a drain can be reduced. The reduction in theparasitic capacitance enables the switching speed of the transistor tobe improved; thus, a transistor with high frequency characteristics canbe provided.

A transistor 29 illustrated in FIGS. 11A and 11B differs from thetransistor 24 in that the insulator 107 is provided over the insulator101 and the conductor 102 is embedded in an opening in the insulator107. In addition, the transistor 29 differs from the transistor 24 alsoin that the insulator 106 c covers the insulator 106 a and thesemiconductor 106 b. In the transistor 29, the insulator 106 c is notprovided on a side surface of the opening formed in the insulator 117.With this structure, the conductor 114 in the opening in the insulator117 can have a longer length in the channel length direction than theconductor 114 in the transistor 24 or the like.

The transistor 29 is different from the transistor 24 also in that thetransistor 29 includes the region 108 c containing silicon and oxygen ona surface of the conductor 108 a and the region 108 d containing siliconand oxygen on a surface of the conductor 108 b. The region 108 c and theregion 108 d may be formed in a manner similar to that of the transistor12 illustrated in FIGS. 7A to 7C.

Note that the region 108 c and the region 108 d are not provided only inthe transistor 12 and the transistor 29. For example, another transistormay include the region 108 c and the region 108 d.

A transistor 26 illustrated in FIGS. 12A and 12B differs from thetransistor 10 in that the conductors 108 a and 108 b are not providedand end portions of side surfaces of the conductor 114 and the insulator112 are substantially aligned with each other.

The low-resistance regions 109 a and 109 b in the transistor 26 mayinclude at least one of elements contained in the insulator 116.Furthermore, various elements may be added to the low-resistance regions109 a and 109 b in order to reduce electric resistance.

Preferable examples of the element that is added to the low-resistanceregions 109 a and 109 b are boron, phosphorus, nitrogen, argon, helium,magnesium, aluminum, silicon, titanium, vanadium, chromium, nickel,cobalt, germanium, yttrium, zirconium, niobium, molybdenum, indium, tin,lanthanum, cerium, neodymium, hafnium, tantalum, and tungsten. Forexample, the concentration of the element in the low-resistance regions109 a and 109 b is preferably higher than or equal to 1×10¹⁴/cm² andlower than or equal to 2×10¹⁶/cm². The concentration of the element inthe low-resistance regions 109 a and 109 b in the insulator 106 c ishigher than that in the region of the insulator 106 c other than thelow-resistance regions 109 a and 109 b (for example, the region of thesemiconductor 106 c overlapping with the conductor 114).

In the transistor 26, the semiconductor 106 b is surrounded by theinsulator 106 a and the insulator 106 c. Therefore, the insulator 106 aand the insulator 106 c are in contact with the end portion of a sidesurface of the semiconductor 106 b, especially, the vicinity of the endportion of the side surface thereof in the channel width direction,whereby continuous junction of the semiconductor 106 b with theinsulator 106 a or the insulator 106 c is formed in the vicinity of theend portion of the side surface of the semiconductor 106 b. As a result,the density of defect states is reduced. Thus, even when an on-statecurrent easily flows due to low-resistance regions 109 a and 109 b, theend portion of the side surface in the channel width direction of thesemiconductor 106 b does not serve as a parasitic channel, which enablesstable electrical characteristics. Note that the insulator 106 a and/orthe insulator 106 c can be omitted in some cases.

A transistor 28 illustrated in FIGS. 12C and 12D differs from thetransistor 10 in that the insulator 112 and the conductor 114 are notprovided. That is, the transistor 28 is what we call a bottom gatetransistor.

In this embodiment, although a conductor including a region containingtungsten and one or more elements selected from silicon, carbon,germanium, tin, aluminum, and nickel is used for a gate electrode, asource electrode, a drain electrode, or the like of a transistor, oneembodiment of the present invention is not limited thereto. For example,a conductor including a region containing tungsten and one or moreelements selected from silicon, carbon, germanium, tin, aluminum, andnickel may be used in an electrode of a capacitor such as ametal-insulator-metal (MIM). In that case, the conductor may include aregion containing silicon and oxygen on its surface, and the regionfunctioning as an insulator may be used as a dielectric of a capacitor.

According to this embodiment, a transistor that is formed using aconductor having heat resistance and oxidation resistance can beprovided.

The structure and method described in this embodiment can be implementedby being combined as appropriate with any of the other structures andmethods described in the other embodiments.

Embodiment 2

In this embodiment, methods for manufacturing semiconductor devices ofembodiments of the present invention are described with reference toFIGS. 13A to 13H to FIGS. 19A to 19F.

<Fabrication Method 1 of Transistor>

A method for fabricating the transistor 10 is described below withreference to FIGS. 13A to 13H, FIGS. 14A to 14F, and FIGS. 15A to 15D.

First, the substrate 100 is prepared. Any of the above-mentionedsubstrates can be used for the substrate 100.

Next, the insulator 101 is formed. Any of the above-mentioned insulatorscan be used for the insulator 101.

The insulator 101 may be formed by a sputtering method, a chemical vapordeposition (CVD) method, a molecular beam epitaxy (MBE) method, a pulsedlaser deposition (PLD) method, an atomic layer deposition (ALD) method,or the like.

Next, a conductor to be the conductor 102 is formed. Any of theabove-described conductors can be used for the conductor to be theconductor 102. The conductor can be formed by a sputtering method, a CVDmethod, an MBE method, a PLD method, an ALD method, or the like.

Next, a resist or the like is formed over the conductor and processingis performed using the resist or the like, whereby the conductor 102 isformed (see FIGS. 13A and 13B). Note that the case where the resist issimply formed also includes the case where a BARC is formed below theresist.

The resist is removed after the object is processed by etching or thelike. For the removal of the resist, plasma treatment and/or wet etchingare/is used. Note that as the plasma treatment, plasma ashing ispreferable. In the case where the removal of the resist or the like isnot enough, the remaining resist or the like may be removed using ozonewater and/or hydrofluoric acid at a concentration higher than or equalto 0.001 volume % and lower than or equal to 1 volume %, and the like.

Then, the insulator 105 is formed. Any of the above-described insulatorscan be used for the insulator 105. The insulator 105 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. In order to reduce water and hydrogen contained inthe insulator 105, the insulator 105 may be formed while the substrateis being heated. For example, in the case where a semiconductor elementlayer is provided below the transistor 10, the heat treatment may beperformed in a relatively low temperature range (e.g., higher than orequal to 350° C. and lower than or equal to 445° C.).

Alternatively, the insulator 105 may be formed by a PECVD method in amanner similar to that of the insulator 104 to be described later inorder to reduce water and hydrogen contained in the insulator 105.

Then, the insulator 103 is formed. Any of the above-described insulatorscan be used for the insulator 103. The insulator 103 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. In order to reduce water and hydrogen contained inthe insulator 103, the insulator 103 may be formed while the substrateis being heated. For example, in the case where a semiconductor elementlayer is provided under the transistor 10, the heat treatment may beperformed in a relatively low temperature range (e.g., higher than orequal to 350° C. and lower than or equal to 445° C.).

CVD methods can be classified into a plasma enhanced CVD (PECVD) methodusing plasma, a thermal CVD (TCVD) method using heat, a photo CVD methodusing light, and the like. Moreover, the CVD methods can be classifiedinto a metal CVD (MCVD) method and a metal organic CVD (MOCVD) methoddepending on a source gas.

In the case of a PECVD method, a high quality film can be obtained atrelatively low temperature. Furthermore, a TCVD method does not useplasma and thus causes less plasma damage to an object. For example, awiring, an electrode, an element (e.g., transistor or capacitor), or thelike included in a semiconductor device might be charged up by receivingelectric charges from plasma. In that case, accumulated electric chargesmight break the wiring, electrode, element, or the like included in thesemiconductor device. Such plasma damage is not caused in the case ofusing a TCVD method, and thus the yield of a semiconductor device can beincreased. In addition, since plasma damage does not occur in thedeposition by a TCVD method, a film with few defects can be obtained.

An ALD method also causes less plasma damage to an object. An ALD methoddoes not cause plasma damage during deposition, so that a film with fewdefects can be obtained.

Unlike in a deposition method in which particles ejected from a targetor the like are deposited, in a CVD method and an ALD method, a film isformed by reaction at a surface of an object. Thus, a CVD method and anALD method enable favorable step coverage almost regardless of the shapeof an object. In particular, an ALD method enables excellent stepcoverage and excellent thickness uniformity and can be favorably usedfor covering a surface of an opening with a high aspect ratio, forexample. For that reason, a formed film is less likely to have a pinholeor the like. On the other hand, an ALD method has a relatively lowdeposition rate; thus, it is sometimes preferable to combine an ALDmethod with another deposition method with a high deposition rate suchas a CVD method.

When a CVD method or an ALD method is used, composition of a film to beformed can be controlled with a flow rate ratio of the source gases. Forexample, by the CVD method or the ALD method, a film with a desiredcomposition can be formed by adjusting the flow ratio of a source gas.Moreover, with a CVD method or an ALD method, by changing the flow rateratio of the source gases while forming the film, a film whosecomposition is continuously changed can be formed. In the case where thefilm is formed while changing the flow rate ratio of the source gases,as compared to the case where the film is formed using a plurality ofdeposition chambers, time taken for the deposition can be reducedbecause time taken for transfer and pressure adjustment is omitted.Thus, semiconductor devices can be manufactured with improvedproductivity.

In a conventional deposition apparatus utilizing a CVD method, one or aplurality of source gases for reaction are supplied to a chamber at thesame time at the time of deposition. In a deposition apparatus utilizingan ALD method, a source gas (also called a precursor) for reaction and agas serving as a reactant are alternately introduced into a chamber, andthen the gas introduction is repeated. Note that the gases to beintroduced can be switched using the respective switching valves (alsoreferred to as high-speed valves).

For example, deposition is performed in the following manner. First, aprecursor is introduced into a chamber and adsorbed onto a substratesurface (first step). Here, the precursor is adsorbed onto the substratesurface, whereby a self-limiting mechanism of surface chemical reactionworks and no more precursor is adsorbed onto a layer of the precursorover the substrate. Note that the proper range of substrate temperaturesat which the self-limiting mechanism of surface chemical reaction worksis also referred to as an ALD window. The ALD window depends on thetemperature characteristics, vapor pressure, decomposition temperature,and the like of a precursor. Next, an inert gas (e.g., argon ornitrogen) or the like is introduced into the chamber, so that anexcessive precursor, a reaction product, and the like are released fromthe chamber (second step). Instead of introduction of an inert gas,vacuum evacuation can be performed to release an excessive precursor, areaction product, and the like from the chamber. Then, a reactant (e.g.,an oxidizer such as H₂O or O₃) is introduced into the chamber to reactwith the precursor adsorbed onto the substrate surface, whereby part ofthe precursor is removed while the molecules of the film are adsorbedonto the substrate (third step). After that, introduction of an inertgas or vacuum evacuation is performed, whereby excessive reactant, areaction product, and the like are released from the chamber (fourthstep).

Note that the introduction of a reactant at the third step and theintroduction of an inert gas at the fourth step may be repeatedlyperformed. That is, after the first step and the second step areperformed, the third step, the fourth step, the third step, and thefourth step may be performed, for example.

For example, it is possible to introduce O₃ as an oxidizer at the thirdstep, to perform N₂ purging at the fourth step, and to repeat thesesteps.

In the case where the third and fourth steps are repeated, the samereactant is not necessarily used for the repeated introduction. Forexample, H₂O may be used as an oxidizer at the third step (for the firsttime), and O₃ may be used as an oxidizer at the third steps (at thesecond and subsequent times).

As described above, the introduction of an oxidizer and the introductionof an inert gas (or vacuum evacuation) in the chamber are repeatedmultiple times in a short time, whereby excess hydrogen atoms and thelike can be more certainly removed from the precursor adsorbed onto thesubstrate surface and eliminated from the chamber. In the case where twokinds of oxidizers are introduced, more excess hydrogen atoms and thelike can be removed from the precursor adsorbed onto the substratesurface. In this manner, hydrogen atoms are prevented from entering theinsulator 103 and the like during the deposition, so that the amounts ofwater, hydrogen, and the like in the insulator 103 and the like can besmall.

A first single layer can be formed on the substrate surface in the abovemanner. By performing the first to fourth steps again, a second singlelayer can be stacked over the first single layer. With the introductionof gases controlled, the first to fourth steps are repeated plural timesuntil a film having a desired thickness is obtained, whereby a thin filmwith excellent step coverage can be formed. The thickness of the thinfilm can be adjusted by the number of repetition times; therefore, anALD method makes it possible to adjust a thickness accurately and thusis suitable for fabricating a minute transistor.

In an ALD method, a film is formed through reaction of the precursorusing thermal energy. An ALD method in which the reactant becomes aradical state with the use of plasma in the above-described reaction ofthe reactant is sometimes called a plasma ALD method. An ALD method inwhich reaction between the precursor and the reactant is performed usingthermal energy is sometimes called a thermal ALD method.

By an ALD method, an extremely thin film can be formed to have a uniformthickness. In addition, the coverage of an uneven surface with the filmis high.

When the plasma ALD method is employed, the film can be formed at alower temperature than when the thermal ALD method is employed. With theplasma ALD method, for example, the film can be formed withoutdecreasing the deposition rate even at 100° C. or lower. Furthermore, inthe plasma ALD method, any of a variety of reactants, including anitrogen gas, can be used without being limited to an oxidizer;therefore, it is possible to form various kinds of films of not only anoxide but also a nitride, a fluoride, a metal, and the like.

In the case where the plasma ALD method is employed, as in aninductively coupled plasma (ICP) method or the like, plasma can begenerated apart from a substrate. When plasma is generated in thismanner, plasma damage can be minimized.

Here, a structure of a deposition apparatus 1000 is described withreference to FIGS. 16A and 16B as an example of an apparatus with whicha film can be formed by an ALD method. FIG. 16A is a schematic diagramof a multi-chamber deposition apparatus 1000, and FIG. 16B is across-sectional view of an ALD apparatus that can be used for thedeposition apparatus 1000.

<Example of Structure of Deposition Apparatus>

The deposition apparatus 1000 includes a carrying-in chamber 1002, acarrying-out chamber 1004, a transfer chamber 1006, a deposition chamber1008, a deposition chamber 1009, a deposition chamber 1010, and atransfer arm 1014. Here, the carrying-in chamber 1002, the carrying-outchamber 1004, and the deposition chambers 1008 to 1010 are connected tothe transfer chamber 1006. Thus, successive film formation can beperformed in the deposition chambers 1008 to 1010 without exposure tothe air, whereby entry of impurities into a film can be prevented.

Note that in order to prevent attachment of moisture, the carrying-inchamber 1002, the carrying-out chamber 1004, the transfer chamber 1006,and the deposition chambers 1008 to 1010 are preferably filled with aninert gas (such as a nitrogen gas) whose dew point is controlled, morepreferably maintain reduced pressure.

An ALD apparatus can be used for the deposition chambers 1008 to 1010. Adeposition apparatus other than an ALD apparatus may be used for any ofthe deposition chambers 1008 to 1010. Examples of the depositionapparatus used for the deposition chambers 1008 to 1010 include asputtering apparatus, a PECVD apparatus, a TCVD apparatus, and an MOCVDapparatus.

For example, when an ALD apparatus and a PECVD apparatus are provided inthe deposition chambers 1008 to 1010, the insulator 105 made of siliconoxide and included in the transistor 10 in FIGS. 1B and 1C can be formedby a PECVD method, the insulator 103 made of hafnium oxide can be formedby an ALD method, and the insulator 104 made of silicon oxide containinghalogen can be formed by a PECVD method. Because the series of filmformation is successively performed without exposure to the air, filmscan be formed without entry of impurities into the films.

Although the deposition apparatus 1000 includes the carrying-in chamber1002, the carrying-out chamber 1004, and the deposition chambers 1008 to1010, the present invention is not limited to this structure. Thedeposition apparatus 1000 may have four or more deposition chambers, ormay additionally include a treatment chamber for heat treatment orplasma treatment. The deposition apparatus 1000 may be of a single-wafertype or may be of a batch type, in which case film formation isperformed on a plurality of substrates at a time.

<Ald Apparatus>

Next, a structure of an ALD apparatus that can be used for thedeposition apparatus 1000 is described. The ALD apparatus includes adeposition chamber (chamber 1020), source material supply portions 1021a and 1021 b, high-speed valves 1022 a and 1022 b which are flow ratecontrollers, source material introduction ports 1023 a and 1023 b, asource material exhaust port 1024, and an evacuation unit 1025. Thesource material introduction ports 1023 a and 1023 b provided in thechamber 1020 are connected to the source material supply portions 1021 aand 1021 b, respectively, through supply tubes and valves. The sourcematerial exhaust port 1024 is connected to the evacuation unit 1025through an exhaust tube, a valve, and a pressure controller.

A plasma generation apparatus 1028 is connected to the chamber 1020 asillustrated in FIG. 16B, whereby film formation can be performed by aplasma ALD method instead of a thermal ALD method. By a plasma ALDmethod, a film can be formed without decreasing the deposition rate evenat low temperatures; thus, a plasma ALD method is preferably used for asingle-wafer type deposition apparatus with low deposition efficiency.

A substrate holder 1026 with a heater is provided in the chamber, and asubstrate 1030 over which a film is to be formed is provided over thesubstrate holder 1026.

In the source material supply portions 1021 a and 1021 b, a source gasis formed from a solid source material or a liquid source material byusing a vaporizer, a heating unit, or the like. Alternatively, thesource material supply portions 1021 a and 1021 b may supply a sourcegas.

Although two source material supply portions 1021 a and 1021 b areprovided as an example, the number of source material supply portions isnot limited thereto, and three or more source material supply portionsmay be provided. The high-speed valves 1022 a and 1022 b can beaccurately controlled by time, and a source gas and an inert gas aresupplied by the high-speed valves 1022 a and 1022 b. The high-speedvalves 1022 a and 1022 b are flow rate controllers for a source gas, andcan also be referred to as flow rate controllers for an inert gas.

In the deposition apparatus illustrated in FIG. 16B, a thin film isformed over a surface of the substrate 1030 in the following manner: thesubstrate 1030 is transferred to be put on the substrate holder 1026,the chamber 1020 is sealed, the substrate 1030 is heated to a desiredtemperature (e.g., higher than or equal to 80° C., higher than or equalto 100° C., or higher than or equal to 150° C.) by heating the substrateholder 1026 with a heater; and supply of a source gas, evacuation withthe evacuation unit 1025, supply of an inert gas, and evacuation withthe evacuation unit 1025 are repeated.

In the deposition apparatus illustrated in FIG. 16B, an insulating layerformed using an oxide (including a composite oxide) containing one ormore elements selected from hafnium, aluminum, tantalum, zirconium, andthe like can be formed by selecting a source material (e.g., a volatileorganometallic compound) used for the source material supply portions1021 a and 1021 b appropriately. Specifically, it is possible to use aninsulating layer formed using hafnium oxide, an insulating layer formedusing aluminum oxide, an insulating layer formed using hafnium silicate,or an insulating layer formed using aluminum silicate. Alternatively, athin film, e.g., a metal layer such as a tungsten layer or a titaniumlayer, or a nitride layer such as a titanium nitride layer can be formedby selecting a source material (e.g., a volatile organometalliccompound) used for the source material supply portions 1021 a and 1021 bappropriately.

For example, in the case where a hafnium oxide layer is formed by an ALDapparatus, two kinds of gases, i.e., ozone (O₃) as an oxidizer and asource gas which is obtained by vaporizing liquid containing a solventand a hafnium precursor compound (hafnium alkoxide or hafnium amide suchas tetrakis(dimethylamido)hafnium (TDMAH)) are used. In this case, thefirst source gas supplied from the source material supply portion 1021 ais TDMAH, and the second source gas supplied from the source materialsupply portion 1021 b is ozone. Note that the chemical formula oftetrakis(dimethylamido)hafnium is Hf[N(CH₃)₂]₄. Examples of anothermaterial liquid include tetrakis(ethylmethylamido)hafnium.

For example, in the case where an aluminum oxide layer is formed by anALD apparatus, two kinds of gases, i.e., H₂O as an oxidizer and a sourcegas which is obtained by vaporizing a liquid containing a solvent and analuminum precursor compound (e.g., trimethylaluminum (TMA)) are used. Inthis case, the first source gas supplied from the source material supplyportion 1021 a is TMA, and the second source gas supplied from thesource material supply portion 1021 b is H₂O. Note that the chemicalformula of trimethylaluminum is Al(CH₃)₃. Examples of another materialliquid include tris(dimethylamido)aluminum, triisobutylaluminum, andaluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

In the case where a tungsten layer is formed using an ALD apparatus, aWF₆ gas and a B₂H₆ gas are sequentially introduced a plurality of timesto form an initial tungsten layer, and then a WF₆ gas and an H₂ gas areused to form a tungsten layer. Note that an SiH₄ gas may be used insteadof a B₂H₆ gas. These gases may be controlled by mass flow controllers.

Then, the insulator 104 is formed (see FIGS. 13C and 13D). Any of theabove-described insulators can be used for the insulator 104. Theinsulator 104 can be formed by a sputtering method, a CVD method, an MBEmethod, a PLD method, an ALD method, or the like.

A CVD method, in particular, a PECVD method is preferably used for theformation of the insulator 104.

In the case where the insulator 104 is formed by a PECVD method, asubstance without containing hydrogen or a substance containing a smallamount of hydrogen is preferably used as a source gas; for example, ahalide is preferably used. For example, in the case where silicon oxideor silicon oxynitride is deposited as the insulator 104, silicon halideis preferably used as a source gas. As the silicon halide, for example,silicon tetrafluoride (SiF₄), silicon tetrachloride (SiCl₄), silicontrichloride (SiHCl₃), dichlorosilane (SiH₂Cl₂), or silicon tetrabromide(SiBr₄) can be used.

In the case where the insulator 104 is formed by a PECVD method, anoxidation gas (e.g., N₂O) is introduced. Since the above-describedsilicon halides are less reactive than SiH₄, the oxidation gas readilyinteracts with the insulator 103. Accordingly, there is a possibilitythat water and hydrogen in the insulator 103 can be released by theoxidation gas, and the amounts of water and hydrogen in the insulator103 can be reduced.

When a silicon halide is used as the source gas for the formation of theinsulator 104, a silicon hydride may be used in addition to the siliconhalide. In that case, the amounts of hydrogen and water in the insulator104 can be reduced as compared with the case where only a siliconhydride is used as the source gas, and the deposition rate can beimproved as compared with the case where only a silicon halide is usedas the source gas. For example, SiF₄ and SiH₄ may be used as the sourcegas for the formation of the insulator 104. For example, the flow rateof SiH₄ is set to greater than 1 sccm and less than 10 sccm, preferably,greater than or equal to 2 sccm and less than or equal to 4 sccm, inwhich case the amounts of water and hydrogen in the insulator 104 andthe deposition rate can be relatively favorable values. Note that theflow ratio of SiF₄ to SiH₄ can be determined as appropriate in view ofthe amounts of water and hydrogen in the insulator 104 and thedeposition rate.

In order to reduce water and hydrogen contained in the insulator 104,the insulator 104 may be formed while the substrate is being heated.

The top surface or the bottom surface of the semiconductor 106 b to beformed later preferably has high planarity. Thus, to improve theplanarity, the top surface of the insulator 104 may be subjected toplanarization treatment such as CMP treatment.

Next, heat treatment is preferably performed. The heat treatment canfurther reduce water or hydrogen in the insulators 105, 103, and 104. Inaddition, the insulator 104 can contain excess oxygen in some cases. Theheat treatment can be performed at a temperature higher than or equal to250° C. and lower than or equal to 650° C., preferably higher than orequal to 450° C. and lower than or equal to 600° C., more preferablyhigher than or equal to 520° C. and lower than or equal to 570° C. Theheat treatment is performed in an inert gas atmosphere or an atmospherecontaining an oxidizing gas at 10 ppm or more, 1% or more, or 10% ormore. The heat treatment may be performed under a reduced pressure.Alternatively, the heat treatment may be performed in such a manner thatheat treatment is performed in an inert gas atmosphere, and then anotherheat treatment is performed in an atmosphere containing an oxidizing gasat 10 ppm or more, 1% or more, or 10% or more in order to compensatedesorbed oxygen. The heat treatment can increase the crystallinity ofthe insulator 126 a and the semiconductor 126 b and can removeimpurities, such as hydrogen and water, for example. For the heattreatment, lamp heating can be performed with use of a rapid thermalannealing (RTA) apparatus. Heat treatment with an RTA apparatus iseffective for an improvement in productivity because it needs short timeas compared with the case of using a furnace.

Note that in the case where a semiconductor element layer is providedbelow the transistor 10, the heat treatment can be performed in arelatively low temperature range (e.g., higher than or equal to 350° C.and lower than or equal to 445° C.). For example, the temperature ispreferably set lower than or equal to the highest heating temperatureamong the substrate heating temperatures for forming the insulator 105,the insulator 103, and the insulator 104.

Next, an insulator 126 a is formed. Any of the above-describedinsulators and semiconductors that can be used for the insulator 106 acan be used for the insulator 126 a. The insulator 126 a can be formedby a sputtering method, a CVD method, an MBE method, a PLD method, anALD method, or the like.

Next, a semiconductor 126 b is formed. Any of the above-describedsemiconductors that can be used for the semiconductor 106 b can be usedfor the semiconductor 126 b. The semiconductor 126 b can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. Note that successive film formation of theinsulator 126 a and the semiconductor 126 b without exposure to the aircan reduce entry of impurities into the films and their interface.

Next, heat treatment is preferably performed. The heat treatment canreduce the hydrogen concentration of the insulator 126 a and thesemiconductor 176 b in some cases. The heat treatment can reduce oxygenvacancies in the insulator 126 a and the semiconductor 126 b in somecases. The heat treatment may be performed at a temperature higher thanor equal to 250° C. and lower than or equal to 650° C., preferablyhigher than or equal to 450° C. and lower than or equal to 600° C.,further preferably higher than or equal to 520° C. and lower than orequal to 570° C. The heat treatment is performed in an inert gasatmosphere or an atmosphere containing an oxidizing gas at 10 ppm ormore, 1% or more, or 10% or more. The heat treatment may be performedunder a reduced pressure. Alternatively, the heat treatment may beperformed in such a manner that heat treatment is performed in an inertgas atmosphere, and then another heat treatment is performed in anatmosphere containing an oxidizing gas at 10 ppm or more, 1% or more, or10% or more in order to compensate desorbed oxygen. The heat treatmentcan increase the crystallinity of the insulator 126 a and thesemiconductor 126 b and can remove impurities such as hydrogen andwater, for example. For the heat treatment, lamp heating can beperformed with use of an RTA apparatus. Heat treatment with an RTAapparatus is effective for an improvement in productivity because itneeds short time as compared with the case of using a furnace. By heattreatment, the peak intensity is increased and a full width at halfmaximum is decreased when a CAAC-OS is used for the insulator 126 a andthe semiconductor 126 b. In other words, the crystallinity of a CAAC-OSis increased by heat treatment.

Note that in the case where a semiconductor element layer is providedbelow the transistor 10, the heat treatment can be performed in arelatively low temperature range (e.g., higher than or equal to 350° C.and lower than or equal to 445° C.). For example, the temperature ispreferably set lower than or equal to the highest heating temperatureamong the substrate heating temperatures for forming the insulator 105,the insulator 103, and the insulator 104 and the temperature of the heattreatment after the formation of the insulator 104. Since water,hydrogen, and the like in the insulator 104 can be sufficiently smallwhen the above-described method for forming the insulator 104 isemployed, water and hydrogen supplied to the insulator 126 a and thesemiconductor 126 b can be sufficiently reduced.

By the heat treatment, oxygen can be supplied from the insulator 104 tothe insulator 126 a and the semiconductor 126 b. The heat treatmentperformed on the insulator 104 makes it very easy to supply oxygen tothe insulator 126 a and the semiconductor 126 b.

Here, the insulator 103 serves as a barrier film that blocks oxygen. Theinsulator 103 provided under the insulator 104 can prevent oxygendiffused in the insulator 104 from being diffused into layers under theinsulator 104.

Oxygen is supplied to the insulator 126 a and the semiconductor 126 b toreduce oxygen vacancies, whereby highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor with a lowdensity of defect states can be achieved.

High-density plasma treatment or the like may be performed. High-densityplasma may be generated using microwaves. For the high-density plasmatreatment, for example, an oxidation gas such as oxygen or nitrous oxidemay be used. Alternatively, a mixed gas of an oxidation gas and a raregas such as He, Ar, Kr, or Xe may be used. In the high-density plasmatreatment, a bias may be applied to the substrate. Thus, oxygen ions andthe like in the plasma can be extracted to the substrate side. Thehigh-density plasma treatment may be performed while the substrate isbeing heated. For example, in the case where the high-density plasmatreatment is performed instead of the heat treatment, the similar effectcan be obtained at a temperature lower than the heat treatmenttemperature. The high-density plasma treatment may be performed beforethe formation of the insulator 126 a, before the formation of theinsulator 126 a described later, after the formation of the insulator112, or after the formation of the insulator 116.

Next, a conductor 128 is formed (see FIGS. 13E and 13F). Any of theabove-described conductors that can be used for the conductors 108 a and108 b can be used for the conductor 128. The conductor 128 can be formedby a sputtering method, a CVD method, an MBE method, a PLD method, anALD method, or the like.

Next, a resist or the like is formed over the conductor 128 andprocessing is performed using the resist or the like, whereby theconductors 108 a and 108 b are formed.

Next, a resist or the like is formed over the semiconductor 126 b andprocessing is performed using the resist or the like and the conductors108 a and 108 b, whereby the insulator 106 a and the semiconductor 106 bare formed (see FIGS. 13G and 13H).

Here, regions of the semiconductor 106 b that are in contact with theconductor 108 a and the conductor 108 b include the low-resistanceregion 109 a and the low-resistance region 109 b in some cases. Thesemiconductor 106 b might have a smaller thickness in a region betweenthe conductor 108 a and the conductor 108 b than in regions overlappingwith the conductor 108 a and the conductor 108 b. This is because partof the top surface of the semiconductor 106 b is sometimes removed atthe time of the formation of the conductor 108 a and the conductor 108b.

Note that after formation of the conductor 128, the insulator 126 a, thesemiconductor 126 b, and the conductor 128 may be collectively processedto form the insulator 106 a, the semiconductor 106 b, and a conductorhaving a shape overlapping with the semiconductor 106 b, and theconductor having the shape overlapping with the semiconductor 106 b maybe further processed to form the conductor 108 a and the conductor 108b.

Then, the insulator 126 c is formed. Any of the above-describedinsulators or semiconductors that can be used for the insulator 106 ccan be used for the insulator 126 c, for example. The insulator 126 ccan be formed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like. Before the formation of theinsulator 126 c, surfaces of the semiconductor 106 b, the conductor 108a, and the conductor 108 b may be etched. For example, plasma containinga rare gas can be used for the etching. After that, the insulator 126 cis successively formed without being exposed to the air, wherebyimpurities can be prevented from entering interfaces between theinsulator 106 c and the semiconductor 106 b, the conductor 108 a, andthe conductor 108 b. In some cases, impurities at an interface betweenfilms are diffused more easily than impurities in a film. For thisreason, a reduction in impurity at the interfaces leads to stableelectrical characteristics of a transistor.

Then, the insulator 132 is formed. Any of the above-described insulatorsthat can be used for the insulator 112 can be used for the insulator132. The insulator 132 can be formed by a sputtering method, a CVDmethod, an MBE method, a PLD method, an ALD method, or the like. Notethat successive film formation of the insulator 126 c and the insulator132 without exposure to the air can reduce entry of impurities into thefilms and their interface.

Next, the conductor 134 is formed (see FIGS. 14A and 14B). Any of theabove-described conductors that can be used for the conductor 114 can beused for the conductor 134. The conductor 134 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. Note that successive film formation of theinsulator 132 and the conductor 134 without exposure to the air canreduce entry of impurities into the films and their interface.

Next, a resist or the like is formed over the conductor 134 andprocessing is performed using the resist, whereby the conductor 114 isformed.

Then, a resist or the like is formed over the conductor 114 and theinsulator 132 and processing is performed using the resist, whereby theinsulator 106 c and the insulator 112 are formed (see FIGS. 14C and14D). Note that at this time, the insulator 106 c and the insulator 112may be formed to expose regions where the conductor 120 a and theconductor 120 b that are formed later are in contact with the conductor108 a and the conductor 108 b.

Then, the insulator 116 is formed (see FIGS. 14E and 14F). Any of theabove-described insulators can be used for the insulator 116. Theinsulator 116 can be formed by a sputtering method, a CVD method, an MBEmethod, a PLD method, an ALD method, or the like.

Here, as the insulator 116, an oxide insulating film of aluminum oxideor the like having a blocking effect against oxygen, hydrogen, water, orthe like is preferably provided.

The insulator 116 is preferably formed by utilizing plasma, furtherpreferably a sputtering method, still further preferably a sputteringmethod in an atmosphere containing oxygen.

As the sputtering method, a direct current (DC) sputtering method inwhich a direct-current power source is used as a sputtering powersource, a DC sputtering method in which a pulsed bias is applied (i.e.,a pulsed DC sputtering method), or a radio frequency (RF) sputteringmethod in which a high frequency power source is used as a sputteringpower source may be used. Alternatively, a magnetron sputtering methodusing a magnet mechanism inside a chamber, a bias sputtering method inwhich voltage is also applied to a substrate during deposition, areactive sputtering method performed in a reactive gas atmosphere, orthe like may be used. The oxygen gas flow rate or deposition power forsputtering can be set as appropriate in accordance with the amount ofoxygen to be added.

When the insulator 116 is formed by a sputtering method, oxygen is addedto the vicinity of a surface of the insulator 104 or a surface of theinsulator 112 (after the formation of the insulator 116, an interfacebetween the insulator 116 and the insulator 104 or the insulator 112) atthe same time as the formation. Although the oxygen is added to theinsulator 104 or the insulator 104 as an oxygen radical, for example,the state of the oxygen at the time of being added is not limitedthereto. The oxygen may be added to the insulator 104 or the insulator112 as an oxygen atom, an oxygen ion, or the like. Note that by additionof oxygen, oxygen in excess of the stoichiometric composition iscontained in the insulator 104 or the insulator 112 in some cases, andthe oxygen in such a case can be called excess oxygen.

Next, heat treatment is preferably performed (see FIGS. 15A and 15B). Bythe heat treatment, oxygen added to the insulator 104 or the insulator112 can be diffused to be supplied to the insulator 106 a, thesemiconductor 106 b, and the insulator 106 c. The heat treatment isperformed at a temperature higher than or equal to 250° C. and lowerthan or equal to 650° C., preferably higher than or equal to 350° C. andlower than or equal to 450° C. The heat treatment is performed in aninert gas atmosphere or an atmosphere containing an oxidizing gas at 10ppm or more, 1% or more, or 10% or more. The heat treatment may beperformed under a reduced pressure. For the heat treatment, lamp heatingcan be performed with use of an RTA apparatus.

This heat treatment is preferably performed at a temperature lower thanthat of the heat treatment performed after formation of thesemiconductor 126 b. A temperature difference between the heat treatmentand the heat treatment performed after formation of the semiconductor126 b is to be 20° C. or more and 150° C. or less, preferably 40° C. ormore and 100° C. or less. Accordingly, superfluous release of excessoxygen (oxygen) from the insulator 104 and the like can be inhibited.Note that in the case where heating at the time of formation of thelayers (e.g., heating at the time of formation of the insulator 118)doubles as the heat treatment after formation of the insulator 118, theheat treatment after formation of the insulator 118 is not necessarilyperformed.

Oxygen (hereinafter referred to as an oxygen 186) added to the insulator104 and the insulator 112 by the deposition of the insulator 116 isdiffused in the insulator 104 or the insulator 112 by the heat treatment(see FIGS. 15A and 15B). The insulator 116 is less permeable to oxygenthan the insulator 104 or the insulator 112 and functions as a barrierfilm that blocks oxygen. Since the insulator 116 is provided over theinsulator 104 or the insulator 112, the oxygen 186 diffused in theinsulator 104 or the insulator 112 is prevented from being diffused inlayers over the insulator 104 or the insulator 112, so that the oxygen186 is diffused mainly laterally or downward in the insulator 104 or theinsulator 112.

The oxygen 186 that is diffused in the insulator 104 or the insulator112 is supplied to the insulator 106 a, the insulator 106 c, and thesemiconductor 106 b as indicated by arrows. The insulator 103 having afunction of blocking oxygen is provided below the insulator 104, therebypreventing the oxygen 186 diffused into the insulator 104 from beingdiffused below the insulator 104.

Thus, the oxygen 186 can be effectively supplied to the insulator 106 a,the insulator 106 c, and the semiconductor 106 b, especially to achannel formation region in the semiconductor 106 b. Oxygen is suppliedto the insulator 106 a, the insulator 106 c, and the semiconductor 106 bto reduce oxygen vacancies in this manner, whereby a highly purifiedintrinsic or substantially highly purified intrinsic oxide semiconductorwith a low density of defect states can be achieved.

Note that heat treatment after the formation of the insulator 116 may beperformed at any time after the insulator 116 is formed. For example,the heat treatment may be performed after the insulator 118 is formed orafter the conductors 120 a and 120 b are formed.

Next, the insulator 118 is formed. Any of the above-described insulatorscan be used for the insulator 118. The insulator 118 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like.

Next, a resist or the like is formed over the insulator 118, andopenings are formed in the insulator 118, the insulator 116, theinsulator 112, and the insulator 106 c. Then, a conductor to be theconductor 120 a and the conductor 120 b is formed. Any of theabove-described conductors can be used for the conductor to be theconductor 120 a and the conductor 120 b. The conductor can be formed bya sputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like.

Next, a resist or the like is formed over the conductor and processingis performed using the resist or the like, whereby the conductors 120 aand 120 b are formed (see FIGS. 15C and 15D).

Through the above process, the transistor 10 of one embodiment of thepresent invention can be fabricated.

<Method 2 for Manufacturing Transistor>

A method for fabricating the transistor 29 is described below withreference to FIGS. 17A to 17H, FIGS. 18A to 18F, and FIGS. 19A to 19F.Note that for the method for fabricating the transistor 29, any of theabove-mentioned methods for fabricating a transistor can be referred to,as appropriate.

First, the substrate 100 is prepared. Any of the above-mentionedsubstrates can be used for the substrate 100.

Next, the insulator 101 is formed. Any of the above-mentioned insulatorscan be used for the insulator 101.

Then, an insulator to be the insulator 107 is formed. Any of theabove-described insulators can be used for the insulator. The insulatorcan be formed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like.

Next, a resist or the like is formed over the insulator and processingis performed using the resist or the like, whereby the insulator 107having an opening is formed.

Next, a conductor to be the conductor 102 is formed. Any of theabove-described conductors can be used for the conductor to be theconductor 102. The conductor can be formed by a sputtering method, a CVDmethod, an MBE method, a PLD method, an ALD method, or the like.

Next, the conductor is polished until the insulator 107 is exposed,whereby the conductor 102 is formed (see FIGS. 17A and 17B). Forexample, CMP treatment may be performed as the polishing.

Then, the insulator 105 is formed. Any of the above-described insulatorscan be used for the insulator 105. The insulator 105 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. In order to reduce water and hydrogen contained inthe insulator 105, the insulator 105 may be formed while the substrateis being heated. For example, in the case where a semiconductor elementlayer is provided below the transistor 29, the heat treatment may beperformed in a relatively low temperature range (e.g., higher than orequal to 350° C. and lower than or equal to 445° C.).

Alternatively, the insulator 105 may be formed by a PECVD method in amanner similar to that of the insulator 104 described above in order toreduce water and hydrogen contained in the insulator 105.

Then, the insulator 103 is formed. Any of the above-described insulatorscan be used for the insulator 103. The insulator 103 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. In order to reduce water and hydrogen contained inthe insulator 103, the insulator 103 may be formed while the substrateis being heated. For example, in the case where a semiconductor elementlayer is provided under the transistor 10, the heat treatment may beperformed in a relatively low temperature range (e.g., higher than orequal to 350° C. and lower than or equal to 445° C.).

Then, the insulator 104 is formed (see FIGS. 17C and 17D). Any of theabove-described insulators can be used for the insulator 104. Theinsulator 104 can be formed by a sputtering method, a CVD method, an MBEmethod, a PLD method, an ALD method, or the like.

The top surface or the bottom surface of the semiconductor 106 b to beformed later preferably has high planarity. Thus, to improve theplanarity, the top surface of the insulator 104 may be subjected toplanarization treatment such as CMP treatment.

Next, heat treatment is preferably performed.

Next, an insulator to be the insulator 106 a is formed. Any of theabove-described insulators and semiconductors that can be used for theinsulator 106 a can be used for the insulator. The insulator can beformed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like.

Next, a semiconductor to be the semiconductor 106 b is formed. Any ofthe above-described semiconductors that can be used for thesemiconductor 106 b can be used for the semiconductor. The semiconductorcan be formed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like. Note that successive film formationof the insulator and the semiconductor without exposure to the air canreduce entry of impurities into the films and their interface.

Next, heat treatment is preferably performed. The heat treatment canfurther reduce water and hydrogen in the insulator 105, the insulator103, and the insulator 104. In addition, the insulator 104 can containexcess oxygen in some cases. The heat treatment may be performed at atemperature higher than or equal to 250° C. and lower than or equal to650° C., preferably higher than or equal to 450° C. and lower than orequal to 600° C., further preferably higher than or equal to 520° C. andlower than or equal to 570° C. The heat treatment is performed in aninert gas atmosphere or an atmosphere containing an oxidizing gas at 10ppm or more, 1% or more, or 10% or more. The heat treatment may beperformed under a reduced pressure. Alternatively, the heat treatmentmay be performed in such a manner that heat treatment is performed in aninert gas atmosphere, and then another heat treatment is performed in anatmosphere containing an oxidizing gas at 10 ppm or more, 1% or more, or10% or more in order to compensate desorbed oxygen. The heat treatmentcan increase the crystallinity of the insulator to be the insulator 106a and the semiconductor to be the semiconductor 106 b and can removeimpurities, such as hydrogen and water, for example. For the heattreatment, lamp heating can be performed with use of an RTA apparatus.Heat treatment with an RTA apparatus is effective for an improvement inproductivity because it needs short time as compared with the case ofusing a furnace.

Note that in the case where a semiconductor element layer is providedbelow the transistor 10, the heat treatment can be performed in arelatively low temperature range (e.g., higher than or equal to 350° C.and lower than or equal to 445° C.). For example, the temperature ispreferably set lower than or equal to the highest heating temperatureamong the substrate heating temperatures for forming the insulator 105,the insulator 103, and the insulator 104.

Next, a resist or the like is formed over the semiconductor andprocessing is performed using the resist or the like, whereby theinsulator 106 a and the semiconductor 106 b are formed (see FIGS. 17Eand 17F).

Next, heat treatment is preferably performed. The heat treatment canfurther reduce water and hydrogen in the insulator 105, the insulator103, and the insulator 104. In addition, the insulator 104 can containexcess oxygen in some cases. The heat treatment may be performed at atemperature higher than or equal to 250° C. and lower than or equal to650° C., preferably higher than or equal to 450° C. and lower than orequal to 600° C., further preferably higher than or equal to 520° C. andlower than or equal to 570° C. The heat treatment is performed in aninert gas atmosphere or an atmosphere containing an oxidizing gas at 10ppm or more, 1% or more, or 10% or more. The heat treatment may beperformed under a reduced pressure. Alternatively, the heat treatmentmay be performed in such a manner that heat treatment is performed in aninert gas atmosphere, and then another heat treatment is performed in anatmosphere containing an oxidizing gas at 10 ppm or more, 1% or more, or10% or more in order to compensate desorbed oxygen. The heat treatmentcan increase the crystallinity of the insulator to be the insulator 106a and the semiconductor 106 b and can remove impurities, such ashydrogen and water, for example. For the heat treatment, lamp heatingcan be performed with use of an RTA apparatus. Heat treatment with anRTA apparatus is effective for an improvement in productivity because itneeds short time as compared with the case of using a furnace.

Note that in the case where a semiconductor element layer is providedbelow the transistor 10, the heat treatment can be performed in arelatively low temperature range (e.g., higher than or equal to 350° C.and lower than or equal to 445° C.). For example, the temperature ispreferably set lower than or equal to the highest heating temperatureamong the substrate heating temperatures for forming the insulator 105,the insulator 103, and the insulator 104.

Next, the insulator 106 c is formed (see FIGS. 17G and 17H). Any of theabove-described insulators and semiconductors that can be used for theinsulator 106 c can be used for the insulator 106 c. The insulator 106 ccan be formed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like.

Next, a conductor to be the conductor 108 a and the conductor 108 b isformed. Any of the above-described conductors that can be used for theconductors 108 a and 108 b can be used for the conductor. The conductorcan be formed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like.

Here, the low-resistance region 109 is formed in a region in thesemiconductor 106 b and the insulator 106 c near the conductor to be theconductor 108 in some cases.

Next, a resist or the like is formed over the conductor and processingis performed using the resist or the like, whereby the conductor 108 isformed.

Next, an insulator 113 that is to be the insulator 110 is formed. Any ofthe above-described insulators that can be used for the insulator 110can be used for the insulator 113, for example. The insulator 113 can beformed by a sputtering method, a CVD method, an MBE method, a PLDmethod, an ALD method, or the like.

When the insulator 110 is formed, a region 111 containing silicon andoxygen is formed on a surface of the conductor 108 in some cases (seeFIGS. 18A and 18B). Note that the region 111 may be formed even when theinsulator 110 is not formed, and the region 111 is not formed in formingthe insulator 110 depending on deposition conditions of the insulator110.

Next, a resist or the like is formed over the insulator 113 andprocessing is performed using the resist or the like, so that theinsulator 110, the region 108 c, the region 108 d, the conductor 108 a,and the conductor 108 b are formed (see FIGS. 18C and 18D). At thistime, part of the insulator 106 c and the semiconductor 106 b may beprocessed in order to remove the low-resistance region 109 in thesemiconductor 106 b.

Next, high-density plasma treatment may be performed. The high-densityplasma treatment is preferably performed in an atmosphere containingoxygen. The atmosphere containing oxygen is a gas atmosphere containingan oxygen atom and refers to atmospheres of oxygen, ozone, and nitrogenoxide (e.g., nitrogen monoxide, nitrogen dioxide, dinitrogen monoxide,dinitrogen trioxide, dinitrogen tetroxide, or dinitrogen pentoxide). Inan atmosphere containing oxygen, an inert gas such as nitrogen or a raregas (e.g., helium or argon) may be contained. With this high-densityplasma treatment performed in an atmosphere containing oxygen, carbon orhydrogen can be eliminated, for example. Furthermore, with thehigh-density plasma treatment in an atmosphere containing oxygen, anorganic compound such as hydrocarbon is also easily eliminated from atreated object.

Annealing treatment may be performed before or after the high-densityplasma treatment. Note that it is in some cases preferable to let anenough amount of gas flow in order to increase the plasma density. Whenthe gas amount is not enough, the deactivation rate of radicals becomeshigher than the generation rate of radicals in some cases. For example,it is preferable in some cases to let a gas flow at 100 sccm or more,300 sccm or more, or 800 sccm or more.

The high-density plasma treatment is performed using a microwavegenerated with a high-frequency generator that generates a wave having afrequency of, for example, more than or equal to 0.3 GHz and less thanor equal to 3.0 GHz, or more than or equal to 2.2 GHz and less than orequal to 2.8 GHz (typically, 2.45 GHz). The treatment pressure can behigher than or equal to 10 Pa and lower than or equal to 5000 Pa,preferably higher than or equal to 200 Pa and lower than or equal to1500 Pa, further preferably higher than or equal to 300 Pa and lowerthan or equal to 1000 Pa. The substrate temperature can be higher thanor equal to 100° C. and lower than or equal to 600° C. (typically 400°C.). Furthermore, a mixed gas of oxygen and argon can be used.

For example, the high density plasma is generated using a 2.45 GHzmicrowave. The high density plasma treatment is preferably performedunder the following conditions: an electron density is higher than orequal to 1×10¹¹/cm³ and lower than or equal to 1×10¹³/cm³, an electrontemperature is 2 eV or lower, or an ion energy is 5 eV or lower. Suchhigh-density plasma treatment produces radicals with low kinetic energyand causes little plasma damage, compared with conventional plasmatreatment. Thus, formation of a film with few defects is possible. Thedistance between an antenna that generates the microwave and the treatedobject is longer than or equal to 5 mm and shorter than or equal to 120mm, preferably longer than or equal to 20 mm and shorter than or equalto 60 mm.

Alternatively, a plasma power source that applies a radio frequency (RF)bias to a substrate may be provided. The frequency of the RF bias may be13.56 MHz, 27.12 MHz, or the like, for example. The use of high-densityplasma enables high-density oxygen ions to be produced, and applicationof the RF bias to the substrate allows oxygen ions generated by thehigh-density plasma to be efficiently introduced into the treatedobject. Furthermore, oxygen ions can be efficiently introduced even intoan opening with a high aspect ratio. Therefore, it is preferable toperform the high-density plasma treatment while a bias is applied to thesubstrate.

Following the high-density plasma treatment, annealing treatment may besuccessively performed without an exposure to the air. Followingannealing treatment, the high-density plasma treatment may besuccessively performed without an exposure to the air. By performinghigh-density plasma treatment and annealing treatment in succession,entry of impurities during the treatment can be suppressed. Moreover, byperforming annealing treatment after the high-density plasma treatmentin an oxygen atmosphere, unnecessary oxygen that is added into thetreated object but is not used to fill oxygen vacancies can beeliminated. The annealing treatment may be performed by lamp annealingor the like, for example.

The treatment time of the high-density plasma treatment is preferablylonger than or equal to 30 seconds and shorter than or equal to 120minutes, longer than or equal to 1 minute and shorter than or equal to90 minutes, longer than or equal to 2 minutes and shorter than or equalto 30 minutes, or longer than or equal to 3 minutes and shorter than orequal to 15 minutes.

The treatment time of the annealing treatment at a temperature of higherthan or equal to 250° C. and lower than or equal to 800° C., higher thanor equal to 300° C. and lower than or equal to 700° C., or higher thanor equal to 400° C. and lower than or equal to 600° C. is preferablylonger than or equal to 30 seconds and shorter than or equal to 120minutes, longer than or equal to 1 minute and shorter than or equal to90 minutes, longer than or equal to 2 minutes and shorter than or equalto 30 minutes, or longer than or equal to 3 minutes and shorter than orequal to 15 minutes.

By the high-density plasma treatment and/or the annealing treatment,defect states in a region of the semiconductor 106 b to be a channelformation region can be reduced. That is, the channel formation regioncan be a highly purified intrinsic region. At this time, in some cases,the resistance of part of the low-resistance region 109 is increased, sothat the low-resistance region 109 is divided into the low-resistanceregion 109 a and the low-resistance region 109 b. The regions 108 c and108 d can be formed also on the side surfaces of the conductors 108 aand 108 b (see FIGS. 18E and 18F).

Then, the insulator 132 is formed. Any of the above-described insulatorsthat can be used for the insulator 112 can be used for the insulator132. The insulator 132 can be formed by a sputtering method, a CVDmethod, an MBE method, a PLD method, an ALD method, or the like. Notethat successive film formation of the insulator 126 c and the insulator132 without exposure to the air can reduce entry of impurities into thefilms and their interface.

Next, the conductor 134 is formed (see FIGS. 19A and 19B). Any of theabove-described conductors that can be used for the conductor 114 can beused for the conductor 134. The conductor 134 can be formed by asputtering method, a CVD method, an MBE method, a PLD method, an ALDmethod, or the like. Note that successive film formation of theinsulator 132 and the conductor 134 without exposure to the air canreduce entry of impurities into the films and their interface.

Next, the conductor 134 is polished until the insulator 113 is exposed,whereby the conductor 114, the insulator 112, and the insulator 110 areformed (see FIGS. 19C and 19D). The conductor 114 serves as a gateelectrode of the transistor 29 and the insulator 112 serves as a gateinsulator of the transistor 29. As described above, the conductor 114and the insulator 112 can be formed in a self-aligned manner.

Then, the insulator 116 is formed (see FIGS. 19E and 19F). Any of theabove-described insulators can be used for the insulator 116. Theinsulator 116 can be formed by a sputtering method, a CVD method, an MBEmethod, a PLD method, an ALD method, or the like.

Next, heat treatment is preferably performed.

Through the above process, the transistor 29 of one embodiment of thepresent invention can be fabricated.

By the method for fabricating a transistor described in this embodiment,it is possible to provide a transistor including a conductor having heatresistance and oxidation resistance.

A transistor with stable electrical characteristics can be provided. Atransistor having a low leakage current in an off state can be provided.A transistor having normally-off electrical characteristics can beprovided. A transistor having a small subthreshold swing value can beprovided. A transistor having high reliability can be provided.

In the method for forming a transistor described in this embodiment,supply of water, hydrogen, and the like to the semiconductor 106 b andthe like can be prevented by heat treatment within a relatively lowtemperature range; accordingly, even when a semiconductor element layer,a wiring layer, or the like is formed below the transistor, thetransistor can be formed without being degraded due to high temperature.

The structure and method described in this embodiment can be implementedby being combined as appropriate with any of the other structures andmethods described in the other embodiments.

Embodiment 3 <Manufacturing Apparatus>

A manufacturing apparatus of one embodiment of the present invention inwhich high-density plasma treatment is performed is described below.

First, a structure of a manufacturing apparatus which allows the entryof few impurities into a film at the time of formation of asemiconductor device or the like is described with reference to FIG. 20,FIG. 21, and FIG. 22.

FIG. 20 is a top view schematically illustrating a single wafermulti-chamber manufacturing apparatus 2700. The manufacturing apparatus2700 includes an atmosphere-side substrate supply chamber 2701 includinga cassette port 2761 for holding a substrate and an alignment port 2762for performing alignment of a substrate, an atmosphere-side substratetransfer chamber 2702 through which a substrate is transferred from theatmosphere-side substrate supply chamber 2701, a load lock chamber 2703a where a substrate is carried and the pressure inside the chamber isswitched from atmospheric pressure to reduced pressure or from reducedpressure to atmospheric pressure, an unload lock chamber 2703 b where asubstrate is carried out and the pressure inside the chamber is switchedfrom reduced pressure to atmospheric pressure or from atmosphericpressure to reduced pressure, a transfer chamber 2704 through which asubstrate is transferred in a vacuum, and chambers 2706 a, 2706 b, 2706c, and 2706 d.

The atmosphere-side substrate transfer chamber 2702 is connected to theload lock chamber 2703 a and the unload lock chamber 2703 b, the loadlock chamber 2703 a and the unload lock chamber 2703 b are connected tothe transfer chamber 2704, and the transfer chamber 2704 is connected tothe chambers 2706 a, 2706 b, 2706 c, and 2706 d.

Note that gate valves GV are provided in connecting portions between thechambers so that each chamber excluding the atmosphere-side substratesupply chamber 2701 and the atmosphere-side substrate transfer chamber2702 can be independently kept in a vacuum state. In addition, theatmosphere-side substrate transfer chamber 2702 is provided with atransfer robot 2763 a, and the transfer chamber 2704 is provided with atransfer robot 2763 b. With the transfer robot 2763 a and the transferrobot 2763 b, a substrate can be transferred inside the manufacturingapparatus 2700.

In the transfer chamber 2704 and each of the chambers 2706 a to 2706 d,the back pressure (total pressure) is, for example, lower than or equalto 1×10⁻⁴ Pa, preferably lower than or equal to 3×10⁻⁵ Pa, furtherpreferably lower than or equal to 1×10⁻⁵ Pa. In the transfer chamber2704 and each of the chambers 2706 a to 2706 d, the partial pressure ofa gas molecule (atom) having a mass-to-charge ratio (m/z) of 18 is, forexample, lower than or equal to 3×10⁻⁵ Pa, preferably lower than orequal to 1×10⁻⁵ Pa, further preferably lower than or equal to 3×10⁻⁶ Pa.Moreover, in the transfer chamber 2704 and each of the chambers 2706 ato 2706 d, the partial pressure of a gas molecule (atom) having amass-to-charge ratio (m/z) of 28 is, for example, lower than or equal to3×10⁻⁵ Pa, preferably lower than or equal to 1×10⁻⁵ Pa, furtherpreferably lower than or equal to 3×10⁻⁶ Pa. Further, in the transferchamber 2704 and each of the chambers 2706 a to 2706 d, the partialpressure of a gas molecule (atom) having a mass-to-charge ratio (m/z) of44 is, for example, lower than or equal to 3×10⁻⁵ Pa, preferably lowerthan or equal to 1×10⁻⁵ Pa, further preferably lower than or equal to3×10⁻⁶ Pa.

Note that the total pressure and the partial pressure in the transferchamber 2704 and each of the chambers 2706 a to 2706 d can be measuredusing a mass analyzer. For example, Qulee CGM-051, a quadrupole massanalyzer (also referred to as Q-mass) manufactured by ULVAC, Inc. can beused.

Moreover, the transfer chamber 2704 and each of the chambers 2706 a to2706 d preferably have a small amount of external leakage or internalleakage. For example, in the transfer chamber 2704 and each of thechambers 2706 a to 2706 d, the leakage rate is less than or equal to3×10⁻⁶ Pa·m³/s, preferably less than or equal to 1×10⁻⁶ Pa·m³/s. Forexample, the leakage rate of a gas molecule (atom) having amass-to-charge ratio (m/z) of 18 is less than or equal to 1×10⁻⁷Pa·m³/s, preferably less than or equal to 3×10⁻⁸ Pa·m³/s. For example,the leakage rate of a gas molecule (atom) having a mass-to-charge ratio(m/z) of 28 is less than or equal to 1×10⁻⁵ Pa·m³/s, preferably lessthan or equal to 1×10⁻⁶ Pa·m³/s. For example, the leakage rate of a gasmolecule (atom) having a mass-to-charge ratio (m/z) of 44 is less thanor equal to 3×10⁻⁶ Pa·m³/s, preferably less than or equal to 1×10⁻⁶Pa·m³/s.

Note that a leakage rate can be derived from the total pressure andpartial pressure measured using the mass analyzer. The leakage ratedepends on external leakage and internal leakage. The external leakagerefers to inflow of gas from the outside of a vacuum system through aminute hole, a sealing defect, or the like. The internal leakage is dueto leakage through a partition, such as a valve, in a vacuum system ordue to released gas from an internal member. Measures need to be takenfrom both aspects of external leakage and internal leakage in order thatthe leakage rate can be set to be less than or equal to theabove-mentioned value.

For example, open/close portions of the transfer chamber 2704 and thechambers 2706 a to 2706 d can be sealed with a metal gasket. For themetal gasket, metal covered with iron fluoride, aluminum oxide, orchromium oxide is preferably used. The metal gasket realizes higheradhesion than an O-ring, and can reduce the external leakage.Furthermore, with the use of the metal covered with iron fluoride,aluminum oxide, chromium oxide, or the like, which is in the passivestate, the release of gas containing impurities released from the metalgasket is suppressed, so that the internal leakage can be reduced.

For a member of the manufacturing apparatus 2700, aluminum, chromium,titanium, zirconium, nickel, or vanadium, which releases a small amountof gas containing impurities, is used. Alternatively, an alloycontaining iron, chromium, nickel, or the like covered with the abovematerial may be used. The alloy containing iron, chromium, nickel, orthe like is rigid, resistant to heat, and suitable for processing. Here,when surface unevenness of the member is decreased by polishing or thelike to reduce the surface area, the release of gas can be reduced.

Alternatively, the above member of the manufacturing apparatus 2700 maybe covered with iron fluoride, aluminum oxide, chromium oxide, or thelike.

The member of the manufacturing apparatus 2700 is preferably formedusing only metal when possible. For example, in the case where a viewingwindow formed of quartz or the like is provided, it is preferable thatthe surface of the viewing window be thinly covered with iron fluoride,aluminum oxide, chromium oxide, or the like so as to suppress release ofgas.

When an adsorbed substance is present in the transfer chamber 2704 andeach of the chambers 2706 a to 2706 d, although the adsorbed substancedoes not affect the pressure in the transfer chamber 2704 and each ofthe chambers 2706 a to 2706 d because it is adsorbed onto an inner wallor the like, the adsorbed substance causes a release of gas when theinside of the transfer chamber 2704 and each of the chambers 2706 a to2706 d is evacuated. Therefore, although there is no correlation betweenthe leakage rate and the exhaust rate, it is important that the adsorbedsubstance present in the transfer chamber 2704 and each of the chambers2706 a to 2706 d be desorbed as much as possible and exhaust beperformed in advance with the use of a pump with high exhaustcapability. Note that the transfer chamber 2704 and each of the chambers2706 a to 2706 d may be subjected to baking to promote desorption of theadsorbed substance. By the baking, the desorption rate of the adsorbedsubstance can be increased about tenfold. The baking can be performed ata temperature of higher than or equal to 100° C. and lower than or equalto 450° C. At this time, when the adsorbed substance is removed while aninert gas is introduced into the transfer chamber 2704 and each of thechambers 2706 a to 2706 d, the desorption rate of water or the like,which is difficult to desorb simply by exhaust, can be furtherincreased. Note that when the inert gas that is introduced is heated tosubstantially the same temperature as the baking temperature, thedesorption rate of the adsorbed substance can be further increased.Here, a rare gas is preferably used as the inert gas.

Alternatively, treatment for evacuating the inside of the transferchamber 2704 and each of the chambers 2706 a to 2706 d is preferablyperformed a certain period of time after heated oxygen, a heated inertgas such as a heated rare gas, or the like is introduced to increase thepressure in the transfer chamber 2704 and each of the chambers 2706 a to2706 d. The introduction of the heated gas can desorb the adsorbedsubstance in the transfer chamber 2704 and each of the chambers 2706 ato 2706 d, and the impurities present in the transfer chamber 2704 andeach of the chambers 2706 a to 2706 d can be reduced. Note that anadvantageous effect can be achieved when this treatment is repeated morethan or equal to 2 times and less than or equal to 30 times, preferablymore than or equal to 5 times and less than or equal to 15 times.Specifically, an inert gas, oxygen, or the like with a temperaturehigher than or equal to 40° C. and lower than or equal to 400° C.,preferably higher than or equal to 50° C. and lower than or equal to200° C. is introduced to the transfer chamber 2704 and each of thechambers 2706 a to 2706 d, so that the pressure therein can be kept tobe higher than or equal to 0.1 Pa and lower than or equal to 10 kPa,preferably higher than or equal to 1 Pa and lower than or equal to 1kPa, further preferably higher than or equal to 5 Pa and lower than orequal to 100 Pa in the time range of 1 minute to 300 minutes, preferably5 minutes to 120 minutes. After that, the inside of the transfer chamber2704 and each of the chambers 2706 a to 2706 d is evacuated in the timerange of 5 minutes to 300 minutes, preferably 10 minutes to 120 minutes.

Next, the chambers 2706 b and 2706 c are described with reference to aschematic cross-sectional view of FIG. 21.

The chambers 2706 b and 2706 c are chambers capable of performinghigh-density plasma treatment on an object, for example. Because thechambers 2706 b and 2706 c have a common structure with the exception ofthe atmosphere used in the high-density plasma treatment, they arecollectively described below.

The chambers 2706 b and 2706 c each include a slot antenna plate 2808, adielectric plate 2809, a substrate stage 2812, and an exhaust port 2819.A gas supply source 2801, a valve 2802, a high-frequency generator 2803,a waveguide 2804, a mode converter 2805, a gas pipe 2806, a waveguide2807, a matching box 2815, a high-frequency power source 2816, a vacuumpump 2817, and a valve 2818 are provided outside the chambers 2706 b and2706 c.

The high-frequency generator 2803 is connected to the mode converter2805 through the waveguide 2804. The mode converter 2805 is connected tothe slot antenna plate 2808 through the waveguide 2807. The slot antennaplate 2808 is positioned in contact with the dielectric plate 2809.Further, the gas supply source 2801 is connected to the mode converter2805 through the valve 2802. Gas is transferred to the chambers 2706 band 2706 c through the gas pipe 2806 which runs through the modeconverter 2805, the waveguide 2807, and the dielectric plate 2809. Thevacuum pump 2817 has a function of exhausting gas or the like from thechambers 2706 b and 2706 c through the valve 2818 and the exhaust port2819. The high-frequency power source 2816 is connected to the substratestage 2812 through the matching box 2815.

The substrate stage 2812 has a function of holding a substrate 2811. Forexample, the substrate stage 2812 has a function of an electrostaticchuck or a mechanical chuck for holding the substrate 2811. In addition,the substrate stage 2812 has a function of an electrode to whichelectric power is supplied from the high-frequency power source 2816.The substrate stage 2812 includes a heating mechanism 2813 therein andthus has a function of heating the substrate 2811.

As the vacuum pump 2817, a dry pump, a mechanical booster pump, an ionpump, a titanium sublimation pump, a cryopump, a turbomolecular pump, orthe like can be used, for example. In addition to the vacuum pump 2817,a cryotrap may be used as well. The combinational use of the cryopumpand the cryotrap allows water to be efficiently exhausted and isparticularly preferable.

For example, the heating mechanism 2813 may be a heating mechanism whichuses a resistance heater or the like for heating. Alternatively, aheating mechanism which utilizes heat conduction or heat radiation froma medium such as a heated gas for heating may be used. For example, RTAsuch as gas rapid thermal annealing (GRTA) or lamp rapid thermalannealing (LRTA) can be used. In GRTA, heat treatment is performed usinga high-temperature gas. An inert gas is used as the gas.

The gas supply source 2801 may be connected to a purifier through a massflow controller. As the gas, a gas whose dew point is −80° C. or lower,preferably −100° C. or lower is preferably used. For example, an oxygengas, a nitrogen gas, or a rare gas (e.g., an argon gas) may be used.

As the dielectric plate 2809, silicon oxide (quartz), aluminum oxide,yttrium oxide (yttria), or the like may be used, for example. Aprotective layer may be further formed on a surface of the dielectricplate 2809. As the protective layer, magnesium oxide, titanium oxide,chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, siliconoxide, aluminum oxide, yttrium oxide, or the like may be used. Thedielectric plate 2809 is exposed to an especially high density region ofhigh-density plasma 2810 that is to be described later. Therefore, theprotective layer can reduce the damage and consequently prevent anincrease of particles or the like during the treatment.

The high-frequency generator 2803 has a function of generating amicrowave with a frequency of, for example, more than or equal to 0.3GHz and less than or equal to 3.0 GHz, or more than or equal to 2.2 GHzand less than or equal to 2.8 GHz. The microwave generated by thehigh-frequency generator 2803 is propagated to the mode converter 2805through the waveguide 2804. The mode converter 2805 converts themicrowave propagated in the TE mode into a microwave in the TEM mode.Then, the microwave is propagated to the slot antenna plate 2808 throughthe waveguide 2807. The slot antenna plate 2808 is provided with aplurality of slot holes, and the microwave propagates through the slotholes and the dielectric plate 2809. Then, an electric field isgenerated below the dielectric plate 2809, and the high-density plasma2810 can be generated. The high-density plasma 2810 includes ions andradicals depending on the gas species supplied from the gas supplysource 2801. For example, oxygen radicals, nitrogen radicals, or thelike are included.

At this time, the quality of a film or the like over the substrate 2811can be modified by the ions and radicals generated in the high-densityplasma 2810. Note that it is preferable in some cases to apply a bias tothe substrate 2811 using the high-frequency power source 2816. As thehigh-frequency power source 2816, a radio frequency (RF) power sourcewith a frequency of 13.56 MHz, 27.12 MHz, or the like may be used, forexample. The application of a bias to the substrate allows ions in thehigh-density plasma 2810 to efficiently reach a deep portion of anopening of the film or the like over the substrate 2811.

For example, in the chamber 2706 b, oxygen radical treatment using thehigh-density plasma 2810 can be performed by introducing oxygen from thegas supply source 2801. In the chamber 2706 c, nitrogen radicaltreatment using the high-density plasma 2810 can be performed byintroducing nitrogen from the gas supply source 2801.

Next, the chambers 2706 a and 2706 d are described with reference to aschematic cross-sectional view of FIG. 22.

The chambers 2706 a and 2706 d are chambers capable of irradiating anobject with an electromagnetic wave, for example. Because the chambers2706 a and 2706 d have a common structure with the exception of the kindof the electromagnetic wave, they are collectively described below.

The chambers 2706 a and 2706 d each include one or more lamps 2820, asubstrate stage 2825, a gas inlet 2823, and an exhaust port 2830. A gassupply source 2821, a valve 2822, a vacuum pump 2828, and a valve 2829are provided outside the chambers 2706 a and 2706 d.

The gas supply source 2821 is connected to the gas inlet 2823 throughthe valve 2822. The vacuum pump 2828 is connected to the exhaust port2830 through the valve 2829. The lamp 2820 is provided to face thesubstrate stage 2825. The substrate stage 2825 has a function of holdinga substrate 2824. The substrate stage 2825 includes a heating mechanism2826 therein and thus has a function of heating the substrate 2824.

As the lamp 2820, a light source having a function of emitting anelectromagnetic wave such as visible light or ultraviolet light may beused, for example. For example, a light source having a function ofemitting an electromagnetic wave which has a peak in a wavelength regionof longer than or equal to 10 nm and shorter than or equal to 2500 nm,longer than or equal to 500 nm and shorter than or equal to 2000 nm, orlonger than or equal to 40 nm and shorter than or equal to 340 nm may beused.

As the lamp 2820, a light source such as a halogen lamp, a metal halidelamp, a xenon arc lamp, a carbon arc lamp, a high-pressure sodium lamp,or a high-pressure mercury lamp may be used, for example.

For example, part of or the whole electromagnetic wave emitted from thelamp 2820 is absorbed by the substrate 2824, so that the quality of afilm or the like over the substrate 2824 can be modified. For example,defects can be generated or reduced or impurities can be removed. Whenthe substrate 2824 absorbs the electromagnetic wave while being heated,generation or reduction of defects or removal of impurities can beefficiently performed.

Alternatively, for example, the electromagnetic wave emitted from thelamp 2820 may cause heat generation in the substrate stage 2825, bywhich the substrate 2824 may be heated. In this case, the heatingmechanism 2826 inside the substrate stage 2825 may be omitted.

For the vacuum pump 2828, the description of the vacuum pump 2817 isreferred to.

For the heating mechanism 2826, the description of the heating mechanism2813 is referred to. For the gas supply source 2821, the description ofthe gas supply source 2801 is referred to.

With the above-described manufacturing apparatus, the quality of a filmcan be modified while the entry of impurities into an object suppressed.

The structure and method described in this embodiment can be implementedby being combined as appropriate with any of the other structures andmethods described in the other embodiments.

Embodiment 4

In this embodiment, an example of a circuit of a semiconductor deviceincluding a transistor or the like of one embodiment of the presentinvention is described.

<Circuit>

An example of a circuit of a semiconductor device including a transistoror the like of one embodiment of the present invention is describedbelow.

<cmos Inverter>

A circuit diagram in FIG. 23A shows a configuration of what is called aCMOS inverter in which a p-channel transistor 2200 and an n-channeltransistor 2100 are connected to each other in series and in which gatesof them are connected to each other.

<Structure 1 of Semiconductor Device>

FIG. 24 is a cross-sectional view of the semiconductor device of FIG.23A. The semiconductor device shown in FIG. 24 includes the transistor2200 and the transistor 2100. The transistor 2100 is placed above thetransistor 2200. Note that the description of the transistor 20 shown inFIGS. 9A and 9B can be referred to for the transistor 2100, but thesemiconductor device of one embodiment of the present invention is notlimited thereto. Any of the transistors described in the aboveembodiments can be used as the transistor 2100. Therefore, thedescription regarding the above-mentioned transistors is referred to forthe transistor 2100 as appropriate.

The transistor 2200 shown in FIG. 24 is a transistor using asemiconductor substrate 450. The transistor 2200 includes a region 472 ain the semiconductor substrate 450, a region 472 b in the semiconductorsubstrate 450, an insulator 462, and a conductor 454. As the conductor454, a conductor including a region containing tungsten and one or moreelements selected from silicon, carbon, germanium, tin, aluminum, andnickel is preferably used.

In the transistor 2200, the regions 472 a and 472 b have functions of asource region and a drain region. The insulator 462 serves as a gateinsulator. The conductor 454 serves as a gate electrode. Thus, theresistance of a channel formation region can be controlled by apotential applied to the conductor 454. In other words, conduction ornon-conduction between the region 472 a and the region 472 b can becontrolled by the potential applied to the conductor 454.

For the semiconductor substrate 450, a single-material semiconductorsubstrate formed using silicon, germanium, or the like or asemiconductor substrate formed using silicon carbide, silicon germanium,gallium arsenide, indium phosphide, zinc oxide, gallium oxide, or thelike may be used, for example. A single crystal silicon substrate ispreferably used as the semiconductor substrate 450.

For the semiconductor substrate 450, a semiconductor substrate includingimpurities imparting n-type conductivity is used. However, asemiconductor substrate including impurities imparting p-typeconductivity may be used as the semiconductor substrate 450. In thatcase, a well including impurities imparting the n-type conductivity maybe provided in a region where the transistor 2200 is formed.Alternatively, the semiconductor substrate 450 may be an i-typesemiconductor substrate.

The top surface of the semiconductor substrate 450 preferably has a(110) plane. Thus, on-state characteristics of the transistor 2200 canbe improved.

The regions 472 a and 472 b are regions including impurities impartingthe p-type conductivity. Accordingly, the transistor 2200 has astructure of a p-channel transistor.

Note that the transistor 2200 is apart from an adjacent transistor by aregion 460 and the like. The region 460 is an insulating region.

The semiconductor device illustrated in FIG. 24 includes an insulator464, an insulator 466, an insulator 468, a conductor 480 a, a conductor480 b, a conductor 480 c, a conductor 478 a, a conductor 478 b, aconductor 478 c, a conductor 476 a, a conductor 476 b, a conductor 474a, a conductor 474 b, a conductor 474 c, a conductor 496 a, a conductor496 b, a conductor 496 c, a conductor 496 d, a conductor 498 a, aconductor 498 b, a conductor 498 c, an insulator 489, an insulator 490,an insulator 491, an insulator 492, an insulator 493, and an insulator494. As each of the conductor 480 a, 480 b, and 480 c, a conductorincluding a region containing tungsten and one or more elements selectedfrom silicon, carbon, germanium, tin, aluminum, and nickel is preferablyused.

The insulator 464 is placed over the transistor 2200. The insulator 466is placed over the insulator 464. The insulator 468 is placed over theinsulator 466. The insulator 489 is placed over the insulator 468. Thetransistor 2100 is placed over the insulator 489. The insulator 493 isplaced over the transistor 2100. The insulator 494 is placed over theinsulator 493.

The insulator 464 includes an opening reaching the region 472 a, anopening reaching the region 472 b, and an opening reaching the conductor454. In the openings, the conductor 480 a, the conductor 480 b, and theconductor 480 c are embedded.

The insulator 466 includes an opening reaching the conductor 480 a, anopening reaching the conductor 480 b, and an opening reaching theconductor 480 c. In the openings, the conductor 478 a, the conductor 478b, and the conductor 478 c are embedded.

The insulator 468 includes an opening reaching the conductor 478 b andan opening reaching the conductor 478 c. In the openings, the conductor476 a and the conductor 476 b are embedded.

The insulator 489 includes an opening overlapping with a channelformation region of the transistor 2100, an opening reaching theconductor 476 a, and an opening reaching the conductor 476 b. In theopenings, the conductor 474 a, the conductor 474 b, and the conductor474 c are embedded.

The conductor 474 a may serve as a gate electrode of the transistor2100. The electrical characteristics of the transistor 2100, such as thethreshold voltage, may be controlled by application of a predeterminedpotential to the conductor 474 a, for example. The conductor 474 a maybe electrically connected to the conductor 504 having a function of thegate electrode of the transistor 2100, for example. In that case,on-state current of the transistor 2100 can be increased. Furthermore, apunch-through phenomenon can be suppressed; thus, the electricalcharacteristics of the transistor 2100 in a saturation region can bestable. Note that the conductor 474 a corresponds to the conductor 102in the above embodiment and thus, the description of the conductor 102can be referred to for details about the conductor 474 a.

The insulator 490 includes an opening reaching the conductor 474 b andan opening reaching the conductor 474 c. Note that the insulator 490corresponds to the insulator 103 in the above embodiment and thus, thedescription of the insulator 103 can be referred to for details aboutthe insulator 490. As described in the above embodiment, the insulator490 is provided to cover the conductors 474 a to 474 c except for theopenings, whereby extraction of oxygen from the insulator 491 by theconductors 474 a to 474 c can be prevented. Accordingly, oxygen can beeffectively supplied from the insulator 491 to an oxide semiconductor ofthe transistor 2100.

The insulator 491 includes the opening reaching the conductor 474 b andthe opening reaching the conductor 474 c. Note that the insulator 491corresponds to the insulator 104 in the above embodiment and thus, thedescription of the insulator 104 can be referred to for details aboutthe insulator 491.

As described in the above embodiment, the amounts of water and hydrogenin the insulator 491 can be reduced, so that defect states can beprevented from being formed in the oxide semiconductor of the transistor2100. Accordingly, the electrical characteristics of the transistor 2100can be stabilized.

Such an insulator in which water and hydrogen are reduced may be used asan insulator other than the insulator 491, such as the insulator 466,the insulator 468, the insulator 489, or the insulator 493.

Although insulators that correspond to the insulators 105 and 101 in thetransistor 20 are not illustrated in FIG. 24, these insulators may beprovided. For example, an insulator that corresponds to the insulator101 may be provided between the insulator 468 and the insulator 489, andan insulator that corresponds to the insulator 105 may be providedbetween the insulator 489 and the insulator 490. In particular, theinsulator that has a function of blocking water, hydrogen, and the likeand corresponds to the insulator 101 may be provided between theinsulator 468 and the insulator 489 and the amounts of water andhydrogen in the insulator 491 are reduced in the above-described manner,whereby defect states can be further prevented from being formed in theoxide semiconductor of the transistor 2100.

The insulator 492 includes an opening reaching the conductor 474 bthrough the conductor 516 b that is one of a source electrode and adrain electrode of the transistor 2100, an opening reaching theconductor 516 a that is the other of the source electrode and the drainelectrode of the transistor 2100, an opening reaching the conductor 504that is the gate electrode of the transistor 2100, and an openingreaching the conductor 474 c. Note that the insulator 492 corresponds tothe insulator 116 in the above embodiment and thus, the description ofthe insulator 116 can be referred to for details about the insulator492.

The insulator 493 includes an opening reaching the conductor 474 bthrough the conductor 516 b that is one of a source electrode and adrain electrode of the transistor 2100, an opening reaching theconductor 516 a that is the other of the source electrode and the drainelectrode of the transistor 2100, an opening reaching the conductor 504that is the gate electrode of the transistor 2100, and an openingreaching the conductor 474 c. In the openings, the conductor 496 a, theconductor 496 b, the conductor 496 c, and the conductor 496 d areembedded. Note that in some cases, an opening provided in a component ofthe transistor 2100 or the like is positioned between openings providedin other components.

The insulator 494 includes an opening reaching the conductor 496 a, anopening reaching the conductor 496 b and the conductor 496 d, and anopening reaching the conductor 496 c. In the openings, the conductor 498a, the conductor 498 b, and the conductor 498 c are embedded.

The insulators 464, 466, 468, 489, 493, and 494 may each be formed tohave, for example, a single-layer structure or a stacked-layer structureincluding an insulator containing boron, carbon, nitrogen, oxygen,fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon,gallium, germanium, yttrium, zirconium, lanthanum, neodymium, hafnium,or tantalum.

The insulator that has a function of blocking oxygen and impurities suchas hydrogen is preferably included in at least one of the insulators464, 466, 468, 489, 493, and 494. When an insulator that has a functionof blocking oxygen and impurities such as hydrogen is placed near thetransistor 2100, the electrical characteristics of the transistor 2100can be stable.

An insulator with a function of blocking oxygen and impurities such ashydrogen may be formed to have a single-layer structure or astacked-layer structure including an insulator containing, for example,boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon,phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium,lanthanum, neodymium, hafnium, or tantalum.

Each of the conductor 454, the conductor 480 a, the conductor 480 b, theconductor 480 c, the conductor 478 a, the conductor 478 b, the conductor478 c, the conductor 476 a, the conductor 476 b, the conductor 474 a,the conductor 474 b, the conductor 474 c, the conductor 496 a, theconductor 496 b, the conductor 496 c, the conductor 496 d, the conductor498 a, the conductor 498 b, and the conductor 498 c may be a conductorincluding a region containing tungsten and one or more elements selectedfrom silicon, carbon, germanium, tin, aluminum, and nickel.Specifically, a conductor containing tungsten and silicon is preferable.Alternatively, each of the conductors may be formed to have, asingle-layer structure or a stacked-layer structure including aconductor containing one or more kinds of elements selected from boron,nitrogen, oxygen, fluorine, silicon, phosphorus, aluminum, titanium,chromium, manganese, cobalt, nickel, copper, zinc, gallium, yttrium,zirconium, molybdenum, ruthenium, silver, indium, tin, tantalum, andtungsten. An alloy or a compound may be used, for example, and aconductor containing aluminum, a conductor containing copper andtitanium, a conductor containing copper and manganese, a conductorcontaining indium, tin, and oxygen, a conductor containing titanium andnitrogen, or the like may be used.

Note that a semiconductor device in FIG. 25 is the same as thesemiconductor device in FIG. 24 except for the structure of thetransistor 2200. Therefore, the description of the semiconductor devicein FIG. 24 is referred to for the semiconductor device in FIG. 25. Inthe semiconductor device in FIG. 25, the transistor 2200 is a Fin-typetransistor. The effective channel width is increased in the Fin-typetransistor 2200, whereby the on-state characteristics of the transistor2200 can be improved. In addition, since contribution of the electricfield of the gate electrode can be increased, the off-statecharacteristics of the transistor 2200 can be improved.

Note that a semiconductor device in FIG. 26 is the same as thesemiconductor device in FIG. 24 except for the structure of thetransistor 2200. Therefore, the description of the semiconductor devicein FIG. 26 is referred to for the semiconductor device in FIG. 24.Specifically, in the semiconductor device in FIG. 26, the transistor2200 is formed in the semiconductor substrate 450 that is an SOIsubstrate. In the structure in FIG. 26, a region 456 is apart from thesemiconductor substrate 450 with an insulator 452 provided therebetween.Since the SOI substrate is used as the semiconductor substrate 450, apunch-through phenomenon and the like can be suppressed; thus, theoff-state characteristics of the transistor 2200 can be improved. Notethat the insulator 452 can be formed by turning the semiconductorsubstrate 450 into an insulator. For example, silicon oxide can be usedas the insulator 452.

In each of the semiconductor devices shown in FIG. 24 to FIG. 26, ap-channel transistor is formed utilizing a semiconductor substrate, andan n-channel transistor is formed above that; therefore, an occupationarea of the element can be reduced. That is, the integration degree ofthe semiconductor device can be improved. In addition, the manufacturingprocess can be simplified compared to the case where an n-channeltransistor and a p-channel transistor are formed utilizing the samesemiconductor substrate; therefore, the productivity of thesemiconductor device can be increased. Moreover, the yield of thesemiconductor device can be improved. For the p-channel transistor, somecomplicated steps such as formation of lightly doped drain (LDD)regions, formation of a shallow trench structure, or distortion designcan be omitted in some cases. Therefore, the productivity and yield ofthe semiconductor device can be increased in some cases, compared to asemiconductor device where an n-channel transistor is formed utilizingthe semiconductor substrate.

<CMOS Analog Switch>

A circuit diagram in FIG. 23B shows a configuration in which sources ofthe transistors 2100 and 2200 are connected to each other and drains ofthe transistors 2100 and 2200 are connected to each other. With such aconfiguration, the transistors can function as what is called a CMOSanalog switch.

<Memory Device 1>

An example of a semiconductor device (memory device) which includes thetransistor of one embodiment of the present invention, which can retainstored data even when not powered, and which has an unlimited number ofwrite cycles is shown in FIGS. 27A to 27C.

The semiconductor device illustrated in FIG. 27A includes a transistor3200 using a first semiconductor, a transistor 3300 using a secondsemiconductor, and a capacitor 3400. Note that a transistor similar tothe transistor 2100 can be used as the transistor 3300.

Note that the transistor 3300 is preferably a transistor with a lowoff-state current. For example, a transistor using an oxidesemiconductor can be used as the transistor 3300. Since the off-statecurrent of the transistor 3300 is low, stored data can be retained for along period at a predetermined node of the semiconductor device. Inother words, power consumption of the semiconductor device can bereduced because refresh operation becomes unnecessary or the frequencyof refresh operation can be extremely low.

In FIG. 27A, a first wiring 3001 is electrically connected to a sourceof the transistor 3200. A second wiring 3002 is electrically connectedto a drain of the transistor 3200. A third wiring 3003 is electricallyconnected to one of a source and a drain of the transistor 3300. Afourth wiring 3004 is electrically connected to a gate of the transistor3300. A gate of the transistor 3200 and the other of the source and thedrain of the transistor 3300 are electrically connected to one electrodeof the capacitor 3400. A fifth wiring 3005 is electrically connected tothe other electrode of the capacitor 3400.

The semiconductor device in FIG. 27A has a feature that the potential ofthe gate of the transistor 3200 can be retained, and thus enableswriting, retaining, and reading of data as follows.

Writing and retaining of data are described. First, the potential of thefourth wiring 3004 is set to a potential at which the transistor 3300 ison, so that the transistor 3300 is turned on. Accordingly, the potentialof the third wiring 3003 is supplied to a node FG where the gate of thetransistor 3200 and the one electrode of the capacitor 3400 areelectrically connected to each other. That is, a predetermined electriccharge is supplied to the gate of the transistor 3200 (writing). Here,one of two kinds of electric charges providing different potentiallevels (hereinafter referred to as a low-level electric charge and ahigh-level electric charge) is supplied. After that, the potential ofthe fourth wiring 3004 is set to a potential at which the transistor3300 is off, so that the transistor 3300 is turned off. Thus, theelectric charge is held at the node FG (retaining).

Since the off-state current of the transistor 3300 is low, the electriccharge of the node FG is retained for a long time.

Next, reading of data is described. An appropriate potential (a readingpotential) is supplied to the fifth wiring 3005 while a predeterminedpotential (a constant potential) is supplied to the first wiring 3001,whereby the potential of the second wiring 3002 varies depending on theamount of electric charge retained in the node FG. This is because inthe case of using an n-channel transistor as the transistor 3200, anapparent threshold voltage V_(th_H) at the time when the high-levelelectric charge is given to the gate of the transistor 3200 is lowerthan an apparent threshold voltage V_(th_L) at the time when thelow-level electric charge is given to the gate of the transistor 3200.Here, an apparent threshold voltage refers to the potential of the fifthwiring 3005 which is needed to make the transistor 3200 be in “onstate.” Thus, the potential of the fifth wiring 3005 is set to apotential V₀ which is between V_(th_H) and V_(th_L), whereby electriccharge supplied to the node FG can be determined. For example, in thecase where the high-level electric charge is supplied to the node FG inwriting and the potential of the fifth wiring 3005 is V₀ (>V_(th_H)),the transistor 3200 is brought into “on state.” In the case where thelow-level electric charge is supplied to the node FG in writing, evenwhen the potential of the fifth wiring 3005 is V₀ (<V_(th_L)), thetransistor 3200 still remains in “off state.” Thus, the data retained inthe node FG can be read by determining the potential of the secondwiring 3002.

Note that in the case where memory cells are arrayed, it is necessarythat data of a desired memory cell be read in read operation. Forexample, a configuration in which only data of a desired memory cell canbe read by supplying a potential at which the transistor 3200 is broughtinto an “off state” regardless of the charge supplied to the node FG,that is, a potential lower than V_(th_H) to the fifth wiring 3005 ofmemory cells from which data is not read may be employed. Alternatively,a configuration in which only data of a desired memory cell can be readby supplying a potential at which the transistor 3200 is brought into an“on state” regardless of the charge supplied to the node FG, that is, apotential higher than V_(th_L) to the fifth wiring 3005 of memory cellsfrom which data is not read may be employed.

Although an example in which two kinds of electric charges are retainedin the node FG, the semiconductor device of the present invention is notlimited to this example. For example, a structure in which three or morekinds of electric charges can be retained in the node FG of thesemiconductor device may be employed. With such a structure, thesemiconductor device can be multi-valued and the storage capacity can beincreased.

<Structure 1 of Memory Device>

FIG. 28 is a cross-sectional view of the semiconductor device of FIG.27A. The semiconductor device shown in FIG. 28 includes the transistor3200, the transistor 3300, and the capacitor 3400. The transistor 3300and the capacitor 3400 are placed above the transistor 3200. Note thatfor the transistor 3300, the description of the above transistor 2100 isreferred to. Furthermore, for the transistor 3200, the description ofthe transistor 2200 in FIG. 24 is referred to. Note that although thetransistor 2200 is illustrated as a p-channel transistor in FIG. 24, thetransistor 3200 may be an n-channel transistor.

The transistor 3200 illustrated in FIG. 28 is a transistor using thesemiconductor substrate 450. The transistor 3200 includes the region 472a in the semiconductor substrate 450, the region 472 b in thesemiconductor substrate 450, the insulator 462, and the conductor 454.

The semiconductor device illustrated in FIG. 28 includes the insulator464, the insulator 466, the insulator 468, the conductor 480 a, theconductor 480 b, the conductor 480 c, the conductor 478 a, the conductor478 b, the conductor 478 c, the conductor 476 a, the conductor 476 b,the conductor 474 a, the conductor 474 b, the conductor 474 c, theconductor 496 a, the conductor 496 b, the conductor 496 c, the conductor496 d, the conductor 498 a, the conductor 498 b, the conductor 498 c,the insulator 489, the insulator 490, the insulator 491, the insulator492, the insulator 493, and the insulator 494.

The insulator 464 is provided over the transistor 3200. The insulator466 is provided over the insulator 464. The insulator 468 is providedover the insulator 466. The insulator 489 is provided over the insulator468. The transistor 3300 is provided over the insulator 489. Theinsulator 493 is provided over the transistor 3300. The insulator 494 isprovided over the insulator 493.

The insulator 464 has an opening reaching the region 472 a, an openingreaching the region 472 b, and an opening reaching the conductor 454. Inthe openings, the conductor 480 a, the conductor 480 b, and theconductor 480 c are embedded.

The insulator 466 includes an opening reaching the conductor 480 a, anopening reaching the conductor 480 b, and an opening reaching theconductor 480 c. In the openings, the conductor 478 a, the conductor 478b, and the conductor 478 c are embedded.

The insulator 468 includes an opening reaching the conductor 478 b andan opening reaching the conductor 478 c. In the openings, the conductor476 a and the conductor 476 b are embedded.

The insulator 489 includes an opening overlapping with a channelformation region of the transistor 3300, an opening reaching theconductor 476 a, and an opening reaching the conductor 476 b. In theopenings, the conductor 474 a, the conductor 474 b, and the conductor474 c are embedded.

The conductor 474 a may serve as a bottom gate electrode of thetransistor 3300. Alternatively, for example, electrical characteristicssuch as the threshold voltage of the transistor 3300 may be controlledby application of a constant potential to the conductor 474 a. Furtheralternatively, for example, the conductor 474 a and the conductor 504that is a top gate electrode of the transistor 3300 may be electricallyconnected to each other. Thus, the on-state current of the transistor3300 can be increased. A punch-through phenomenon can be suppressed;thus, stable electrical characteristics in a saturation region of thetransistor 3300 can be obtained.

The insulator 490 includes an opening reaching the conductor 474 b andan opening reaching the conductor 474 c. Note that the insulator 490corresponds to the insulator 103 in the above embodiment and thus, thedescription of the insulator 103 can be referred to for details aboutthe insulator 490. As described in the above embodiment, the insulator490 is provided to cover the conductors 474 a to 474 c except for theopenings, whereby extraction of oxygen from the insulator 491 by theconductors 474 a to 474 c can be prevented. Accordingly, oxygen can beeffectively supplied from the insulator 491 to an oxide semiconductor ofthe transistor 3300.

The insulator 491 includes the opening reaching the conductor 474 b andthe opening reaching the conductor 474 c. Note that the insulator 491corresponds to the insulator 104 in the above embodiment and thus, thedescription of the insulator 104 can be referred to for details aboutthe insulator 491.

As described in the above embodiment, the amounts of water and hydrogenin the insulator 491 can be reduced, so that defect states can beprevented from being formed in the oxide semiconductor of the transistor2100. Accordingly, the electrical characteristics of the transistor 2100can be stabilized.

Such an insulator in which water and hydrogen are reduced may be used asan insulator other than the insulator 491, such as the insulator 466,the insulator 468, the insulator 489, or the insulator 493.

Although insulators that correspond to the insulators 105 and 101 in thetransistor 20 are not illustrated in FIG. 24, these insulators may beprovided. For example, an insulator that corresponds to the insulator101 may be provided between the insulator 468 and the insulator 489, andan insulator that corresponds to the insulator 105 may be providedbetween the insulator 489 and the insulator 490. In particular, theinsulator that has a function of blocking water, hydrogen, and the likeand corresponds to the insulator 101 may be provided between theinsulator 468 and the insulator 489 and the amounts of water andhydrogen in the insulator 491 are reduced in the above-described manner,whereby defect states can be further prevented from being formed in theoxide semiconductor of the transistor 3300.

The insulator 492 includes an opening reaching the conductor 474 bthrough the conductor 516 b that is one of a source electrode and adrain electrode of the transistor 3300, an opening reaching theconductor 514 that overlaps with the conductor 516 a that is the otherof the source electrode and the drain electrode of the transistor 3300,with the insulator 511 positioned therebetween, an opening reaching theconductor 504 that is a gate electrode of the transistor 3300, and anopening reaching the conductor 474 c through the conductor 516 a that isthe other of the source electrode and the drain electrode of thetransistor 3300. Note that the insulator 492 corresponds to theinsulator 116 in the above embodiment and thus, the description of theinsulator 116 can be referred to for details about the insulator 492.

The insulator 493 includes an opening reaching the conductor 474 bthrough the conductor 516 b that is one of a source electrode and adrain electrode of the transistor 3300, an opening reaching theconductor 514 that overlaps with the conductor 516 a that is the otherof the source electrode and the drain electrode of the transistor 3300,with the insulator 511 positioned therebetween, an opening reaching theconductor 504 that is a gate electrode of the transistor 3300, and anopening reaching the conductor 474 c through the conductor 516 a that isthe other of the source electrode and the drain electrode of thetransistor 3300. In the openings, the conductor 496 a, the conductor 496b, the conductor 496 c, and the conductor 496 d are embedded. Note thatin some cases, an opening provided in a component of the transistor 3300or the like is positioned between openings provided in other components.

The insulator 494 includes an opening reaching the conductor 496 a, anopening reaching the conductor 496 b, an opening reaching the conductor496 c, and an opening reaching the conductor 496 d. In the openings, theconductors 498 a, 498 b, 498 c, and 498 d are embedded.

At least one of the insulators 464, 466, 468, 489, 493, and 494preferably has a function of blocking oxygen and impurities such ashydrogen. When an insulator that has a function of blocking oxygen andimpurities such as hydrogen is placed near the transistor 3300, theelectrical characteristics of the transistor 3300 can be stable.

The source or drain of the transistor 3200 is electrically connected tothe conductor 516 b that is one of the source electrode and the drainelectrode of the transistor 3300 through the conductor 480 b, theconductor 478 b, the conductor 476 a, the conductor 474 b, and theconductor 496 c. The conductor 454 that is the gate electrode of thetransistor 3200 is electrically connected to the conductor 516 a that isthe other of the source electrode and the drain electrode of thetransistor 3300 through the conductor 480 c, the conductor 478 c, theconductor 476 b, the conductor 474 c, and the conductor 496 d.

The capacitor 3400 includes the conductor 516 a that is the other of thesource electrode and the drain electrode of the transistor 3300, theconductor 514, and the insulator 511. The insulator 511 is preferablyused in some cases because the insulator 511 can be formed in the samestep as the insulator functioning as a gate insulator of the transistor3300, leading to an increase in productivity. A layer formed in the samestep as the conductor 504 functioning as the gate electrode of thetransistor 3300 is preferably used as the conductor 514 in some cases,leading to an increase in productivity.

For the structures of other components, the description of FIG. 24 andthe like can be referred to as appropriate.

A semiconductor device in FIG. 29 is the same as the semiconductordevice in FIG. 28 except for the structure of the transistor 3200.Therefore, the description of the semiconductor device in FIG. 28 isreferred to for the semiconductor device in FIG. 29. Specifically, inthe semiconductor device in FIG. 29, the transistor 3200 is a Fin-typetransistor. For the Fin-type transistor 3200, the description of thetransistor 2200 in FIG. 25 is referred to. Note that although thetransistor 2200 is illustrated as a p-channel transistor in FIG. 25, thetransistor 3200 may be an n-channel transistor.

A semiconductor device in FIG. 30 is the same as the semiconductordevice in FIG. 28 except for the structure of the transistor 3200.Therefore, the description of the semiconductor device in FIG. 28 isreferred to for the semiconductor device in FIG. 30. Specifically, inthe semiconductor device in FIG. 30, the transistor 3200 is provided inthe semiconductor substrate 450 that is an SOI substrate. For thetransistor 3200, which is provided in the semiconductor substrate 450(SOI substrate), the description of the transistor 2200 in FIG. 26 isreferred to. Note that although the transistor 2200 is illustrated as ap-channel transistor in FIG. 26, the transistor 3200 may be an n-channeltransistor.

<Memory Device 2>

The semiconductor device in FIG. 27B is different from the semiconductordevice in FIG. 27A in that the transistor 3200 is not provided. Also inthis case, data can be written and retained in a manner similar to thatof the semiconductor device in FIG. 27A.

Reading of data in the semiconductor device in FIG. 27B is described.When the transistor 3300 is brought into an on state, the third wiring3003 which is in a floating state and the capacitor 3400 are broughtinto conduction, and the electric charge is redistributed between thethird wiring 3003 and the capacitor 3400. As a result, the potential ofthe third wiring 3003 is changed. The amount of change in the potentialof the third wiring 3003 varies depending on the potential of the oneelectrode of the capacitor 3400 (or the electric charge accumulated inthe capacitor 3400).

For example, the potential of the third wiring 3003 after the chargeredistribution is (C_(B)×V_(B0)+CV)/(C_(B)+C), where V is the potentialof the one electrode of the capacitor 3400, C is the capacitance of thecapacitor 3400, C_(B) is the capacitance component of the third wiring3003, and V_(B0) is the potential of the third wiring 3003 before thecharge redistribution. Thus, it can be found that, assuming that thememory cell is in either of two states in which the potential of the oneelectrode of the capacitor 3400 is V₁ and V₀ (V₁>V₀), the potential ofthe third wiring 3003 in the case of retaining the potential V₁(=(C_(B)×V_(B0)+CV₁)/(C_(B)+C)) is higher than the potential of thethird wiring 3003 in the case of retaining the potential V₀(=(C_(B)×V_(B0)+CV₀)/(C_(B)+C)).

Then, by comparing the potential of the third wiring 3003 with apredetermined potential, data can be read.

In this case, a transistor including the first semiconductor may be usedfor a driver circuit for driving a memory cell, and a transistorincluding the second semiconductor may be stacked over the drivercircuit as the transistor 3300.

When including a transistor using an oxide semiconductor and having alow off-state current, the semiconductor device described above canretain stored data for a long time. In other words, power consumption ofthe semiconductor device can be reduced because refresh operationbecomes unnecessary or the frequency of refresh operation can beextremely low. Moreover, stored data can be retained for a long timeeven when power is not supplied (note that a potential is preferablyfixed).

In the semiconductor device, a high voltage is not needed for writingdata and deterioration of elements is less likely to occur. Unlike in aconventional nonvolatile memory, for example, it is not necessary toinject and extract electrons into and from a floating gate; thus, aproblem such as deterioration of an insulator is not caused. That is,the semiconductor device of one embodiment of the present invention doesnot have a limit on the number of times data can be rewritten, which isa problem of a conventional nonvolatile memory, and the reliabilitythereof is drastically improved. Furthermore, data is written dependingon the on/off state of the transistor, whereby high-speed operation canbe achieved.

<Memory Device 3>

A modification example of the semiconductor device (memory device)illustrated in FIG. 27A is described with reference to a circuit diagramin FIG. 31.

The semiconductor device illustrated in FIG. 31 includes a transistor4100, a transistor 4200, a transistor 4300, a transistor 4400, acapacitor 4500, and a capacitor 4600. Here, a transistor similar to thetransistor 3200 can be used as the transistor 4100, and transistorssimilar to the transistor 3300 can be used as the transistors 4200,4300, and 4400. Although not illustrated in FIG. 31, a plurality ofsemiconductor devices in FIG. 31 are provided in a matrix. Thesemiconductor devices in FIG. 31 can control writing and reading of adata voltage in accordance with a signal or a potential supplied to awiring 4001, a wiring 4003, a wiring 4005, a wiring 4006, a wiring 4007,a wiring 4008, and a wiring 4009.

One of a source and a drain of the transistor 4100 is connected to thewiring 4003. The other of the source and the drain of the transistor4100 is connected to the wiring 4001. Although the transistor 4100 is ap-channel transistor in FIG. 31, the transistor 4100 may be an n-channeltransistor.

The semiconductor device in FIG. 31 includes two data retentionportions. For example, a first data retention portion retains anelectric charge between one of a source and a drain of the transistor4400, one electrode of the capacitor 4600, and one of a source and adrain of the transistor 4200 which are connected to a node FG1. A seconddata retention portion retains an electric charge between a gate of thetransistor 4100, the other of the source and the drain of the transistor4200, one of a source and a drain of the transistor 4300, and oneelectrode of the capacitor 4500 which are connected to a node FG2.

The other of the source and the drain of the transistor 4300 isconnected to the wiring 4003. The other of the source and the drain ofthe transistor 4400 is connected to the wiring 4001. A gate of thetransistor 4400 is connected to the wiring 4005. A gate of thetransistor 4200 is connected to the wiring 4006. A gate of thetransistor 4300 is connected to the wiring 4007. The other electrode ofthe capacitor 4600 is connected to the wiring 4008. The other electrodeof the capacitor 4500 is connected to the wiring 4009.

The transistors 4200, 4300, and 4400 each function as a switch forcontrol of writing a data voltage and retaining an electric charge. Notethat, as each of the transistors 4200, 4300, and 4400, it is preferableto use a transistor having a low current that flows between a source anda drain in an off state (low off-state current). As an example of thetransistor with a low off-state current, a transistor including an oxidesemiconductor in its channel formation region (an OS transistor) ispreferably used. An OS transistor has a low off-state current and can beformed to overlap with a transistor including silicon, for example.Although the transistors 4200, 4300, and 4400 are n-channel transistorsin FIG. 31, the transistors 4200, 4300, and 4400 may be p-channeltransistors.

The transistors 4200 and 4300 and the transistor 4400 are preferablyprovided in different layers even when the transistors 4200, 4300, and4400 are transistors including oxide semiconductors. In other words, thesemiconductor device in FIG. 31 preferably includes, as illustrated inFIG. 31, a first layer 4021 where the transistor 4100 is provided, asecond layer 4022 where the transistors 4200 and 4300 are provided, anda third layer 4023 where the transistor 4400 is provided. By stackinglayers where transistors are provided, the circuit area can be reduced,so that the size of the semiconductor device can be reduced.

Next, operation of writing data to the semiconductor device illustratedin FIG. 31 is described.

First, operation of writing data voltage to the data retention portionconnected to the node FG1 (hereinafter referred to as writingoperation 1) is described. In the following description, data voltagewritten to the data retention portion connected to the node FG1 is VD₁,and the threshold voltage of the transistor 4100 is V_(th).

In the writing operation 1, the potential of the wiring 4003 is set atVD₁, and after the potential of the wiring 4001 is set at a groundpotential, the wiring 4001 is brought into an electrically floatingstate. The wirings 4005 and 4006 are set at a high level. The wirings4007 to 4009 are set at a low level. Then, the potential of the node FG2in the electrically floating state is increased, so that a current flowsthrough the transistor 4100. The current flows through the transistor4100, so that the potential of the wiring 4001 is increased. Thetransistors 4400 and 4200 are turned on. Thus, as the potential of thewiring 4001 is increased, the potentials of the nodes FG1 and FG2 areincreased. When the potential of the node FG2 is increased and a voltage(V_(gs)) between the gate and the source of the transistor 4100 becomesthe threshold voltage V_(th) of the transistor 4100, the current flowingthrough the transistor 4100 is decreased. Accordingly, the potentials ofthe wiring 4001 and the nodes FG1 and FG2 stop increasing, so that thepotentials of the nodes FG1 and FG2 are fixed at “V_(D1)−V_(th)” inwhich VD₁ is decreased by V_(th).

When a current flows through the transistor 4100, V_(D1) supplied to thewiring 4003 is supplied to the wiring 4001, so that the potentials ofthe nodes FG1 and FG2 are increased. When the potential of the node FG2becomes “V_(D1)−V_(th)” with the increase in the potentials, V_(gs) ofthe transistor 4100 becomes V_(th), so that the current flow is stopped.

Next, operation of writing data voltage to the data retention portionconnected to the node FG2 (hereinafter referred to as writing operation2) is described. In the following description, data voltage written tothe data retention portion connected to the node FG2 is V_(D2).

In the writing operation 2, the potential of the wiring 4001 is set atV_(D2), and after the potential of the wiring 4003 is set at a groundpotential, the wiring 4003 is brought into an electrically floatingstate. The wiring 4007 is set at the high level. The wirings 4005, 4006,4008, and 4009 are set at the low level. The transistor 4300 is turnedon, so that the wiring 4003 is set at the low level. Thus, the potentialof the node FG2 is decreased to the low level, so that the current flowsthrough the transistor 4100. By the current flow, the potential of thewiring 4003 is increased. The transistor 4300 is turned on. Thus, as thepotential of the wiring 4003 is increased, the potential of the node FG2is increased. When the potential of the node FG2 is increased and V_(gs)of the transistor 4100 becomes V_(th) of the transistor 4100, thecurrent flowing through the transistor 4100 is decreased. Accordingly,an increase in the potentials of the wiring 4003 and the node FG2 isstopped, so that the potential of the node FG2 is fixed at“V_(D2)−V_(th)” in which V_(D2) is decreased by V_(th).

In other words, when a current flows through the transistor 4100, V_(D2)supplied to the wiring 4001 is supplied to the wiring 4003, so that thepotential of the node FG2 is increased. When the potential of the nodeFG2 becomes “V_(D2)−V_(th) ^(”) with the increase in the potential,V_(gs) of the transistor 4100 becomes V_(th), so that the current flowis stopped. At this time, the transistors 4200 and 4400 are off and thepotential of the node FG1 remains at “V_(D1)−V_(th)” written in thewriting operation 1.

In the semiconductor device in FIG. 31, after data voltages are writtento the plurality of data retention portions, the wiring 4009 is set atthe high level, so that the potentials of the nodes FG1 and FG2 areincreased. Then, the transistors are turned off to stop movement ofelectric charges; thus, the written data voltages are retained.

By the above-described writing operation of the data voltage to thenodes FG1 and FG2, the data voltages can be retained in the plurality ofdata retention portions. Although examples where “V_(D1)−V_(th)” and“V_(D2)−V_(th)” are used as the written potentials are described, theyare data voltages corresponding to multilevel data. Therefore, in thecase where the data retention portions each retain 4-bit data, 16-value“V_(D1)−V_(th)” and 16-value “V_(D2)−V_(th)” can be obtained.

Next, operation of reading data from the semiconductor deviceillustrated in FIG. 31 is described.

First, operation of reading data voltage to the data retention portionconnected to the node FG2 (hereinafter referred to as readingoperation 1) is described.

In the reading operation 1, after precharge is performed, the wiring4003 in an electrically floating state is discharged. The wirings 4005to 4008 are set low. When the wiring 4009 is set low, the potential ofthe node FG2 which is electrically floating is set at “V_(D2)−V_(th).”The potential of the node FG2 is decreased, so that a current flowsthrough the transistor 4100. By the current flow, the potential of thewiring 4003 which is electrically floating is decreased. As thepotential of the wiring 4003 is decreased, V_(gs) of the transistor 4100is decreased. When V_(gs) of the transistor 4100 becomes V_(th) of thetransistor 4100, the current flowing through the transistor 4100 isdecreased. In other words, the potential of the wiring 4003 becomes“V_(D2)” which is larger than the potential of the node FG2,“V_(D2)−V_(th),” by V_(th). The potential of the wiring 4003 correspondsto the data voltage of the data retention portion connected to the nodeFG2. The data voltage of the read analog value is subjected to A/Dconversion, so that data of the data retention portion connected to thenode FG2 is obtained.

In other words, the wiring 4003 after precharge is brought into afloating state and the potential of the wiring 4009 is changed from highto low, whereby a current flows through the transistor 4100. When thecurrent flows, the potential of the wiring 4003 which is in a floatingstate is decreased to be “V_(D2).” In the transistor 4100, V_(gs)between “V_(D2)−V_(th)” of the node FG2 and “V_(D2)” of the wiring 4003becomes V_(th), so that the current stops. Then, “V_(D2)” written in thewriting operation 2 is read to the wiring 4003.

After data in the data retention portion connected to the node FG2 isobtained, the transistor 4300 is turned on to discharge “V_(D2)−V_(th)”of the node FG2.

Then, the electric charges retained in the node FG1 are distributedbetween the node FG1 and the node FG2, data voltage in the dataretention portion connected to the node FG1 is transferred to the dataretention portion connected to the node FG2. The wirings 4001 and 4003are set low. The wiring 4006 is set high. The wiring 4005 and thewirings 4007 to 4009 are set low. When the transistor 4200 is turned on,the electric charges in the node FG1 are distributed between the nodeFG1 and the node FG2.

Here, the potential after the electric charge distribution is decreasedfrom the written potential, “V_(D1)−V_(th).” Thus, the capacitance ofthe capacitor 4600 is preferably larger than the capacitance of thecapacitor 4500. Alternatively, the potential written to the node FG1,“V_(D1)−V_(th),” is preferably larger than the potential correspondingto the same data, “V_(D2)−V_(th).” By changing the ratio of thecapacitances and setting the written potential larger in advance asdescribed above, a decrease in potential after the electric chargedistribution can be suppressed. The change in potential due to theelectric charge distribution is described later.

Next, operation of reading data voltage to the data retention portionconnected to the node FG1 (hereinafter referred to as reading operation2) is described.

In the reading operation 2, the wiring 4003 which is brought into anelectrically floating state after precharge is discharged. The wirings4005 to 4008 are set low. The wiring 4009 is set high at the time ofprecharge and then, set low. When the wiring 4009 is set low, thepotential of the node FG2 which is electrically floating is set at“V_(D1)−V_(th).” The potential of the node FG2 is decreased, so that acurrent flows through the transistor 4100. The current flows, so thatthe potential of the wiring 4003 which is electrically floating isdecreased. As the potential of the wiring 4003 is decreased, V_(gs) ofthe transistor 4100 is decreased. When V_(gs) of the transistor 4100becomes V_(th) of the transistor 4100, the current flowing through thetransistor 4100 is decreased. In other words, the potential of thewiring 4003 becomes “V_(D1)” which is larger than the potential of thenode FG2, “V_(D1) V_(th),” by V_(th). The potential of the wiring 4003corresponds to the data voltage of the data retention portion connectedto the node FG1. The data voltage of the read analog value is subjectedto A/D conversion, so that data of the data retention portion connectedto the node FG1 is obtained. The above is the reading operation of thedata voltage of the data retention portion connected to the node FG1.

In other words, the wiring 4003 after precharge is brought into afloating state and the potential of the wiring 4009 is changed from highto low, whereby a current flows through the transistor 4100. When thecurrent flows, the potential of the wiring 4003 which is in a floatingstate is decreased to be “V_(D1).” In the transistor 4100, V_(gs)between “V_(D1)−V_(th)” of the node FG2 and “V_(D1)” of the wiring 4003becomes V_(th), so that the current stops. Then, “V_(D1)” written in thewriting operation 1 is read to the wiring 4003.

In the above-described reading operation of data voltages from the nodesFG1 and FG2, the data voltages can be read from the plurality of dataretention portions. For example, 4-bit (16-level) data is retained ineach of the node FG1 and the node FG2, whereby 8-bit (256-level) datacan be retained in total. Although the first to third layers 4021 to4023 are provided in the structure illustrated in FIG. 31, the storagecapacity can be increased by adding layers without increasing the areaof the semiconductor device.

The read potential can be read as a voltage larger than the written datavoltage by V_(th). Therefore, V_(th) of “V_(D1)−V_(th)” and V_(th) of“V_(D2)−V_(th)” written in the writing operation can be canceled to beread. As a result, the storage capacity per memory cell can be improvedand read data can be close to accurate data; thus, the data reliabilitybecomes excellent.

FIG. 32 is a cross-sectional view of a semiconductor device thatcorresponds to FIG. 31. The semiconductor device illustrated in FIG. 32includes the transistors 4100, 4200, 4300, and 4400 and the capacitors4500 and 4600. Here, the transistor 4100 is formed in the first layer4021, the transistors 4200 and 4300 and the capacitor 4500 are formed inthe second layer 4022, and the transistor 4400 and the capacitor 4600are formed in the third layer 4023.

Here, the description of the transistor 3300 can be referred to for thetransistors 4200, 4300, and 4400, and the description of the transistor3200 can be referred to for the transistor 4100. The description madewith reference to FIG. 28 can be appropriately referred to for otherwirings, other insulators, and the like.

Note that the capacitors 4500 and 4600 are formed by including theconductive layers each having a trench-like shape, while the conductivelayer of the capacitor 3400 in the semiconductor device in FIG. 28 isparallel to the substrate. With this structure, a larger capacity can beobtained without increasing the occupation area.

<Memory Device 4>

The semiconductor device in FIG. 27C is different from the semiconductordevice in FIG. 27A in that the transistor 3500 and a sixth wiring 3006are included. Also in this case, data can be written and retained in amanner similar to that of the semiconductor device in FIG. 27A. Atransistor similar to the transistor 3200 described above can be used asthe transistor 3500.

The sixth wiring 3006 is electrically connected to a gate of thetransistor 3500, one of a source and a drain of the transistor 3500 iselectrically connected to the drain of the transistor 3200, and theother of the source and the drain of the transistor 3500 is electricallyconnected to the third wiring 3003.

FIG. 33 illustrates an example of a cross-sectional view of thesemiconductor device illustrated in FIG. 27C. FIG. 34 illustrates anexample of a cross section that is substantially perpendicular to aA1-A2 direction in FIG. 33. The semiconductor device illustrated in FIG.27C, FIG. 33, and FIG. 34 includes five layers 1627 to 1631. The layer1627 includes the transistor 3200, the transistor 3500, and a transistor3600. The layer 1628 and the layer 1629 include the transistor 3300.

The layer 1627 includes a substrate 1400, the transistors 3200, 3500,and 3600 over the substrate 1400, an insulator 1464 over the transistor3200 and the like, and plugs such as a plug 1541. The plug 1541 or thelike is connected to, for example, a gate electrode, a source electrode,a drain electrode, or the like of the transistor 3200 or the like. Theplug 1541 is preferably formed to be embedded in the insulator 1464.

The description of the transistor 2200 can be referred to for thetransistors 3200, 3500, and 3600.

The insulator 1464 can be formed using, for example, silicon oxide,silicon oxynitride, silicon nitride oxide, silicon nitride, aluminumoxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, orthe like.

The insulator 1464 can be formed by a sputtering method, a CVD method(including a thermal CVD method, an MOCVD method, a PECVD method, andthe like), an MBE method, an ALD method, a PLD method, or the like. Inparticular, it is preferable that the insulator be formed by a CVDmethod, further preferably a plasma CVD method because coverage can befurther improved. It is preferable to use a thermal CVD method, an MOCVDmethod, or an ALD method in order to reduce plasma damage.

Alternatively, the insulator 1464 can be formed using siliconcarbonitride, silicon oxycarbide, or the like. Further alternatively,undoped silicate glass (USG), boron phosphorus silicate glass (BPSG),borosilicate glass (BSG), or the like can be used. USG, BPSG, and thelike may be formed by an atmospheric pressure CVD method. Alternatively,hydrogen silsesquioxane (HSQ) or the like may be applied by a coatingmethod.

The insulator 1464 may have a single-layer structure or a stacked-layerstructure of a plurality of materials.

In FIG. 33, the insulator 1464 is formed of two layers, i.e., aninsulator 1464 a and an insulator 1464 b over the insulator 1464 a.

The insulator 1464 a is preferably formed over a region 1476 of thetransistor 3200, a conductor 1454 functioning as a gate of thetransistor 3200 and the like, and the like with high adhesion or highcoverage.

As an example of the insulator 1464 a, silicon nitride formed by a CVDmethod can be used. Here, the insulator 1464 a preferably containshydrogen in some cases. When the insulator 1464 a contains hydrogen, adefect or the like in the substrate 1400 is reduced and thecharacteristics of the transistor 3200 and the like are improved in somecases. For example, in the case where the substrate 1400 is formed usinga material containing silicon, a defect such as a dangling bond in thesilicon can be terminated by hydrogen.

The parasitic capacitance formed between a conductor under the insulator1464 a, such as the conductor 1454, and a conductor over the insulator1464 b, such as a conductor 1511, is preferably small. Thus, theinsulator 1464 b preferably has a low dielectric constant. Thedielectric constant of the insulator 1464 b is preferably lower thanthat of an insulator 1462 that functions as a gate insulator of thetransistor 3200 and the like. The dielectric constant of the insulator1464 b is preferably lower than that of the insulator 1464 a. Forexample, the relative dielectric constant of the insulator 1464 b ispreferably lower than 4, more preferably lower than 3. For example, therelative dielectric constant of the insulator 1464 b is preferably 0.7times or less that of the insulator 1464 a, more preferably 0.6 times orless that of the insulator 1464 a.

Here, for example, silicon nitride and USG can be used as the insulator1464 a and the insulator 1464 b, respectively.

When the insulator 1464 a, an insulator 1581 a, and the like are formedusing a material with low copper permeability, such as silicon nitrideor silicon carbonitride, the diffusion of copper into a layer under theinsulator 1464 a or the like and a layer over the insulator 1581 a orthe like can be suppressed when copper is included in the conductor 1511or the like.

An impurity such as copper released from a top surface of the conductor1511 might be diffused into a layer over the conductor 1511 through aninsulator 1584 or the like, for example. Thus, the insulator 1584 overthe conductor 1511 b is preferably formed using a material through whichan impurity such as copper is hardly allowed to pass. For example, theinsulator 1584 may have a stacked structure of the insulator 1581 a andan insulator 1581 b.

The layer 1628 includes an insulator 1581, the insulator 1584 over theinsulator 1581, an insulator 1571 over the insulator 1584, an insulator1585 over the insulator 1571, the conductor 1511 and the like over theinsulator 1464, a plug 1543 and the like connected to the conductor 1511and the like, and a conductor 1513 over the insulator 1571. Theconductor 1511 is preferably formed to fill an opening in the insulator1581. The plug 1543 and the like are preferably formed to fill openingsin the insulator 1584 and the insulator 1571. The conductor 1513 ispreferably formed to fill an opening in the insulator 1585.

The layer 1628 may include a conductor 1413. The conductor 1413 ispreferably formed to fill an opening in the insulator 1585.

The insulator 1584 and the insulator 1585 can be formed using, forexample, silicon oxide, silicon oxynitride, silicon nitride oxide,silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitrideoxide, aluminum nitride, or the like.

The insulator 1584 and the insulator 1585 can be formed by a sputteringmethod, a CVD method (including a thermal CVD method, an MOCVD method, aPECVD method, and the like), an MBE method, an ALD method, a PLD method,or the like. In particular, it is preferable that the insulator beformed by a CVD method, further preferably a plasma CVD method becausecoverage can be further improved. It is preferable to use a thermal CVDmethod, an MOCVD method, or an ALD method in order to reduce plasmadamage.

Alternatively, the insulator 1584 and the insulator 1585 can be formedusing silicon carbide, silicon carbonitride, silicon oxycarbide, or thelike. Further alternatively, undoped silicate glass (USG), boronphosphorus silicate glass (BPSG), borosilicate glass (BSG), or the likecan be used. USG, BPSG, and the like may be formed by an atmosphericpressure CVD method. Alternatively, hydrogen silsesquioxane (HSQ) or thelike may be applied by a coating method.

Each of the insulators 1584 and 1585 may have a single-layer structureor a stacked-layer structure of a plurality of materials.

The insulator 1581 may have a stacked-layer structure of a plurality oflayers. For example, the insulator 1581 has a two-layer structure of theinsulator 1581 a and the insulator 1581 b over the insulator 1581 a asshown in FIG. 33.

The plug 1543 has a portion projecting above the insulator 1571.

A conductive material such as a metal material, an alloy material, or ametal oxide material can be used as a material of the conductor 1511,the conductor 1513, the conductor 1413, the plug 1543, and the like. Forexample, a single-layer structure or a stacked-layer structure using anyof metals such as aluminum, titanium, chromium, nickel, copper, yttrium,zirconium, niobium, molybdenum, silver, tantalum, and tungsten, or analloy containing any of these metals as a main component can be used.Alternatively, a metal nitride such as tungsten nitride, molybdenumnitride, or titanium nitride can be used.

The conductors such as the conductor 1511 and the conductor 1513preferably function as wirings in the semiconductor device illustratedin FIG. 27C. Therefore, these conductors are also referred to as wiringsor wiring layers in some cases. These conductors are preferablyconnected to each other via plugs such as the plug 1543.

For the insulator 1581, the description of the insulator 1464 isreferred to. The insulator 1581 may have a single-layer structure or astacked-layer structure of a plurality of materials. In the exampleshown in FIG. 33, the insulator 1581 has a two-layer structure of theinsulator 1581 a and the insulator 1581 b over the insulator 1581 a. Fora material and a formation method that can be used for the insulator1581 a and the insulator 1581 b, the description of the material and theformation method that can be used for the insulator 1464 a and theinsulator 1464 b can be referred to.

As an example of the insulator 1581 a, silicon nitride formed by a CVDmethod can be used. In a semiconductor element included in thesemiconductor device illustrated in FIG. 27C, such as the transistor3300, hydrogen is diffused into the semiconductor element, so that thecharacteristics of the semiconductor element are degraded in some cases.In view of this, a film that releases a small amount of hydrogen ispreferably used as the insulator 1581 a. The released amount of hydrogencan be measured by TDS, for example. In TDS, the amount of hydrogenreleased from the insulator 1581 a which is converted into hydrogenatoms is, for example, less than or equal to 5×10²⁰ atoms/cm³,preferably less than or equal to 2×10²⁰ atoms/cm³, more preferably lessthan or equal to 1×10²⁰ atoms/cm³ in the range of 50° C. to 500° C. Theamount of hydrogen released from the insulator 1581 a per area of theinsulating film, which is converted into hydrogen atoms, is less than orequal to 5×10¹⁵ atoms/cm², preferably less than or equal to 2×10¹⁵atoms/cm², more preferably less than or equal to 1×10¹⁵ atoms/cm², forexample.

Silicon nitride from which a small number of hydrogen atoms are releasedmay be used for not only the insulator 1581 a but also an insulator in alayer over the insulator 1581 a illustrated in FIG. 33. Instead of thesilicon nitride, an insulator similar to the insulator 104 described inthe above embodiment in which hydrogen and water are reduced may beused.

The dielectric constant of the insulator 1581 b is preferably lower thanthat of the insulator 1581 a. For example, the relative dielectricconstant of the insulator 1581 b is preferably lower than 4, morepreferably lower than 3. For example, the relative dielectric constantof the insulator 1581 b is preferably 0.7 times or less that of theinsulator 1581 a, more preferably 0.6 times or less that of theinsulator 1581 a.

The insulator 1571 is preferably formed using an insulating materialthrough which an impurity hardly passes. Preferably, the insulator 1571has low oxygen permeability, for example. Preferably, the insulator 1571has low hydrogen permeability, for example. Preferably, the insulator1571 has low water permeability, for example.

The insulator 1571 can be formed using a single-layer structure or astacked-layer structure using, for example, aluminum oxide, hafniumoxide, tantalum oxide, zirconium oxide, lead zirconate titanate (PZT),strontium titanate (SrTiO₃), (Ba,Sr)TiO₃ (BST), silicon nitride, or thelike. Alternatively, aluminum oxide, bismuth oxide, germanium oxide,niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttriumoxide, zirconium oxide, or gallium oxide may be added to the insulator,for example. Alternatively, the insulator may be subjected to nitridingtreatment to be oxynitride. A layer of silicon oxide, siliconoxynitride, or silicon nitride may be stacked over the insulator.Aluminum oxide is particularly preferable because of its excellentbarrier property against water and hydrogen.

The insulator 1571 is formed using, for example, silicon carbide,silicon carbonitride, or silicon oxycarbide.

The insulator 1571 may be a stack including a layer of a materialthrough which water and hydrogen are hardly allowed to pass and a layercontaining an insulating material. The insulator 1571 may be, forexample, a stack of a layer containing silicon oxide or siliconoxynitride, a layer containing a metal oxide, and the like.

The insulator 1571 included in the semiconductor device illustrated inFIG. 27C can suppress the diffusion of an element included in theconductor 1513, the conductor 1413, and the like into the insulator 1571and layers under the insulator 1571 (e.g., the insulator 1584, theinsulator 1581, and the layer 1627), for example.

In the case where the dielectric constant of the insulator 1571 ishigher than that of the insulator 1584, the thickness of the insulator1571 is preferably smaller than that of the insulator 1584. Here, therelative dielectric constant of the insulator 1584 is 0.7 times or lessthat of the insulator 1571, more preferably 0.6 times or less that ofthe insulator 1571, for example. The thickness of the insulator 1571 ispreferably greater than or equal to 5 nm and less than or equal to 200nm, more preferably greater than or equal to 5 nm and less than or equalto 60 nm, and the thickness of the insulator 1584 is preferably greaterthan or equal to 30 nm and less than or equal to 800 nm, more preferablygreater than or equal to 50 nm and less than or equal to 500 nm, forexample. The thickness of the insulator 1571 is preferably less than orequal to one-third of the thickness of the insulator 1584, for example.

FIG. 33 is a cross-sectional view showing some of components of thesemiconductor device illustrated in FIG. 27C. The insulator 1464 b, theplug 1541 formed to be embedded in the insulator 1464 b, the insulator1581 over the insulator 1464 b, the conductor 1511 over the plug 1541and the insulator 1464 b, the insulator 1584 over the insulator 1581,the insulator 1571 over the insulator 1584, the plug 1543 formed to beembedded in the insulator 1584 and the insulator 1571 and positionedover the conductor 1511, the insulator 1585 over the insulator 1571, andthe conductor 1513 over the plug 1543 and the insulator 1571 are shownin FIG. 33. In the cross section shown in FIG. 33, a level of thehighest region in a top surface of the plug 1543 is preferably higherthan a level of the highest region in a top surface of the insulator1571.

In some cases, a part of the insulator 1571 is removed when an openingfor forming the conductor 1513 is formed.

The insulator 1464 a and the insulator 1581 a are formed using, forexample, silicon nitride and silicon carbonitride, respectively. Here, amaterial with low hydrogen permeability is used as at least one of aninsulator 1571 a and the insulator 1571. When titanium nitride is usedas the conductor 1513 b, for example, diffusion of hydrogen contained insilicon nitride and silicon carbonitride into the transistor 3300 can besuppressed.

The layer 1629 includes the transistor 3300 and plugs such as a plug1544 and a plug 1544 b. The plugs such as the plug 1544 and the plug1544 b are connected to the conductor 1513 in the layer 1628 and a gateelectrode, a source electrode, and a drain electrode of the transistor3300. The description of the transistor 20, the transistor 2100, and thelike can be referred to for the structure of the transistor 3300.

The transistor 3300 includes the conductor 1413, an insulator 1571 a, aninsulator 1402, a conductor 1416 a, a conductor 1416 b, a conductor1404, an insulator 1408, and an insulator 591. The descriptions of thecomponents of the transistor 20 can be referred to for the components ofthe transistor 3300. For the conductor 1413, the insulator 1571 a, theinsulator 1402, the conductor 1416 a, the conductor 1416 b, theconductor 1404, the insulator 1408, and the insulator 591, thedescription of the conductor 102, the insulator 103, the insulator 104,the conductor 108 a, the conductor 108 b, the conductor 114, theinsulator 116, and the insulator 118, respectively, can be referred to.Although an insulator that corresponds to the insulator 105 in thetransistor 20 is not illustrated in FIG. 33, the insulator may beprovided. For example, an insulator corresponding to the insulator 105may be provided between the insulator 1585 and the insulator 1571 a.

As in the above embodiment, the amounts of water and hydrogen containedin the insulator in a stack of insulators (in this embodiment, a stackof the insulator 1585, the insulator 1571 a, and the insulator 1402)provided between the insulator 1571 and the insulator corresponding tothe insulator 106 a of the transistor 20 are preferably small. When theinsulator 1571 has a function of blocking water and hydrogen asdescribed above, water and hydrogen supplied to an oxide to be theinsulator 106 a and the semiconductor 106 b of the transistor 20 whilethe oxide is being deposited are those contained in the insulator 1585,the insulator 1571 a, and the insulator 1402. Accordingly, when theamounts of water and hydrogen contained in the stack of the insulator1585, the insulator 1571 a, and the insulator 1402 (in particular, theamounts of water and hydrogen contained in the insulator 1402) aresufficiently small at the time of deposition for the oxide, the amountsof water and hydrogen supplied to the oxide can be small.

The conductor 1416 a and the conductor 1416 b preferably include amaterial through which an element included in the plug 1544 b formed incontact with the top surfaces of the conductor 1416 a and the conductor1416 b is unlikely to pass.

Each of the conductor 1416 a and the conductor 1416 b may be formed ofstacked films. For example, each of the conductor 1416 a and theconductor 1416 b is formed of stacked layers of a first layer and asecond layer. Here, the first layer is formed over the oxide layer 406b, and the second layer is formed over the first layer. For example,tungsten and tantalum nitride are used as the first layer and the secondlayer, respectively. Here, copper is used as the plug 1544 b or thelike, for example. Copper is preferably used as a conductor such as aplug or a wiring because of its low resistance. On the other hand,copper is easily diffused; the diffusion of copper into a semiconductorlayer, a gate insulating film, or the like of a transistor degrades thetransistor characteristics in some cases. When tantalum nitride isincluded in the conductor 1416 a and the conductor 1416 b, the diffusionof copper included in the plug 1544 b or the like into the oxidesemiconductor layer 406 b can be suppressed in some cases.

The semiconductor device illustrated in FIG. 27C of one embodiment ofthe present invention preferably has a structure in which, in the casewhere an element and a compound that cause degradation ofcharacteristics of a semiconductor element are included in the plug, thewiring, or the like, the diffusion of the element and the compound intothe semiconductor element is suppressed.

The layer 1630 includes an insulator 1592, conductors such as aconductor 1514, and plugs such as a plug 1545. The plug 1545 and thelike are connected to the conductors such as the conductor 1514.

The layer 1631 includes a capacitor 3400. The capacitor 3400 includes aconductor 1516, a conductor 1517, and an insulator 1571. The insulator1571 includes a region positioned between the conductor 1516 and theconductor 1517. The layer 1631 preferably includes an insulator 1594 anda plug 1547 over the conductor 1517. The plug 1547 is preferably formedto fill an opening in the insulator 1594. The layer 1631 preferablyincludes a conductor 1516 b connected to the plug included in the layer1630 and a plug 1547 b over the conductor 1516 b.

The layer 1631 may include a wiring layer connected to the plug 1547 andthe plug 1547 b. In the example shown in FIG. 33, the wiring layerincludes a conductor 1518 and the like connected to the plug 1547 andthe plug 1547 b, a plug 1548 over the conductor 1518, an insulator 1595,a conductor 1519 over the plug 1548, and an insulator 1599 over theconductor 1519. The plug 1548 is preferably formed to fill an opening inthe insulator 1595. The insulator 1599 includes an opening over theconductor 1519.

The structure described in this embodiment can be used in appropriatecombination with any of the other structures described in the otherembodiments.

Embodiment 5

In this embodiment, an example of an imaging device including thetransistor or the like of one embodiment of the present invention isdescribed.

<Imaging Device>

An imaging device of one embodiment of the present invention isdescribed below.

FIG. 35A is a plan view illustrating an example of an imaging device 200of one embodiment of the present invention. The imaging device 200includes a pixel portion 210 and peripheral circuits for driving thepixel portion 210 (a peripheral circuit 260, a peripheral circuit 270, aperipheral circuit 280, and a peripheral circuit 290). The pixel portion210 includes a plurality of pixels 211 arranged in a matrix with p rowsand q columns (p and q are each an integer of 2 or more). The peripheralcircuit 260, the peripheral circuit 270, the peripheral circuit 280, andthe peripheral circuit 290 are each connected to the plurality of pixels211, and a signal for driving the plurality of pixels 211 is supplied.In this specification and the like, in some cases, a “peripheralcircuit” or a “driver circuit” indicate all of the peripheral circuits260, 270, 280, and 290. For example, the peripheral circuit 260 can beregarded as part of the peripheral circuit.

The imaging device 200 preferably includes a light source 291. The lightsource 291 can emit detection light P 1.

The peripheral circuit includes at least one of a logic circuit, aswitch, a buffer, an amplifier circuit, and a converter circuit. Theperipheral circuit may be formed over a substrate where the pixelportion 210 is formed. A semiconductor device such as an IC chip may beused as part or the whole of the peripheral circuit. Note that as theperipheral circuit, one or more of the peripheral circuits 260, 270,280, and 290 may be omitted.

As illustrated in FIG. 35B, the pixels 211 may be provided to beinclined in the pixel portion 210 included in the imaging device 200.When the pixels 211 are obliquely arranged, the distance between pixels(pitch) can be shortened in the row direction and the column direction.Accordingly, the quality of an image taken with the imaging device 200can be improved.

<Configuration Example 1 of Pixel>

The pixel 211 included in the imaging device 200 is formed with aplurality of subpixels 212, and each subpixel 212 is combined with afilter (color filter) which transmits light in a specific wavelengthrange, whereby data for achieving color image display can be obtained.

FIG. 36A is a top view showing an example of the pixel 211 with which acolor image is obtained. The pixel 211 illustrated in FIG. 36A includesa subpixel 212 provided with a color filter that transmits light in ared (R) wavelength range (also referred to as a subpixel 212R), asubpixel 212 provided with a color filter that transmits light in agreen (G) wavelength range (also referred to as a subpixel 212G), and asubpixel 212 provided with a color filter that transmits light in a blue(B) wavelength range (also referred to as a subpixel 212B). The subpixel212 can function as a photosensor.

The subpixel 212 (the subpixel 212R, the subpixel 212G, and the subpixel212B) is electrically connected to a wiring 231, a wiring 247, a wiring248, a wiring 249, and a wiring 250. In addition, the subpixel 212R, thesubpixel 212G, and the subpixel 212B are connected to respective wirings253 which are independently provided. In this specification and thelike, for example, the wiring 248 and the wiring 249 that are connectedto the pixel 211 in the n-th row are referred to as a wiring 248[n] anda wiring 249[n]. For example, the wiring 253 connected to the pixel 211in the m-th column is referred to as a wiring 253[m]. Note that in FIG.36A, the wirings 253 connected to the subpixel 212R, the subpixel 212G,and the subpixel 212B in the pixel 211 in the m-th column are referredto as a wiring 253[m]R, a wiring 253[m]G, and a wiring 253[m]B. Thesubpixels 212 are electrically connected to the peripheral circuitthrough the above wirings.

The imaging device 200 has a structure in which the subpixel 212 iselectrically connected to the subpixel 212 in an adjacent pixel 211which is provided with a color filter transmitting light in the samewavelength range as the subpixel 212, via a switch. FIG. 36B shows aconnection example of the subpixels 212: the subpixel 212 in the pixel211 arranged in the n-th (n is an integer greater than or equal to 1 andless than or equal top) row and the m-th (m is an integer greater thanor equal to 1 and less than or equal to q) column and the subpixel 212in the adjacent pixel 211 arranged in an (n+1)-th row and the m-thcolumn. In FIG. 36B, the subpixel 212R arranged in the n-th row and them-th column and the subpixel 212R arranged in the (n+1)-th row and them-th column are connected to each other via a switch 201. The subpixel212G arranged in the n-th row and the m-th column and the subpixel 212Garranged in the (n+1)-th row and the m-th column are connected to eachother via a switch 202. The subpixel 212B arranged in the n-th row andthe m-th column and the subpixel 212B arranged in the (n+1)-th row andthe m-th column are connected to each other via a switch 203.

The color filter used in the subpixel 212 is not limited to red (R),green (G), and blue (B) color filters, and color filters that transmitlight of cyan (C), yellow (Y), and magenta (M) may be used. By provisionof the subpixels 212 that sense light in three different wavelengthranges in one pixel 211, a full-color image can be obtained.

The pixel 211 including the subpixel 212 provided with a color filtertransmitting yellow (Y) light may be provided, in addition to thesubpixels 212 provided with the color filters transmitting red (R),green (G), and blue (B) light. The pixel 211 including the subpixel 212provided with a color filter transmitting blue (B) light may beprovided, in addition to the subpixels 212 provided with the colorfilters transmitting cyan (C), yellow (Y), and magenta (M) light. Whenthe subpixels 212 sensing light in four different wavelength ranges areprovided in one pixel 211, the reproducibility of colors of an obtainedimage can be increased.

For example, in FIG. 36A, in regard to the subpixel 212 sensing light ina red wavelength range, the subpixel 212 sensing light in a greenwavelength range, and the subpixel 212 sensing light in a bluewavelength range, the pixel number ratio (or the light receiving arearatio) thereof is not necessarily 1:1:1. For example, the Bayerarrangement in which the pixel number ratio (the light receiving arearatio) is set at red:green:blue=1:2:1 may be employed. Alternatively,the pixel number ratio (the light receiving area ratio) of red and greento blue may be 1:6:1.

Although the number of subpixels 212 provided in the pixel 211 may beone, two or more subpixels are preferably provided. For example, whentwo or more subpixels 212 sensing light in the same wavelength range areprovided, the redundancy is increased, and the reliability of theimaging device 200 can be increased.

When an infrared (IR) filter that transmits infrared light and absorbsor reflects visible light is used as the filter, the imaging device 200that senses infrared light can be achieved.

Furthermore, when a neutral density (ND) filter (dark filter) is used,output saturation which occurs when a large amount of light enters aphotoelectric conversion element (light-receiving element) can beprevented. With a combination of ND filters with different dimmingcapabilities, the dynamic range of the imaging device can be increased.

Besides the above-described filter, the pixel 211 may be provided with alens. An arrangement example of the pixel 211, a filter 254, and a lens255 is described with cross-sectional views in FIGS. 37A and 37B. Withthe lens 255, the photoelectric conversion element can receive incidentlight efficiently. Specifically, as illustrated in FIG. 37A, light 256enters a photoelectric conversion element 220 through the lens 255, thefilter 254 (a filter 254R, a filter 254G, and a filter 254B), a pixelcircuit 230, and the like which are provided in the pixel 211.

As indicated by a region surrounded with dashed lines, however, part ofthe light 256 indicated by arrows might be blocked by some wirings 257.Thus, a preferable structure is such that the lens 255 and the filter254 are provided on the photoelectric conversion element 220 side asillustrated in FIG. 37B, whereby the photoelectric conversion element220 can efficiently receive the light 256. When the light 256 enters thephotoelectric conversion element 220 from the photoelectric conversionelement 220 side, the imaging device 200 with high sensitivity can beprovided.

As the photoelectric conversion element 220 illustrated in FIGS. 37A and37B, a photoelectric conversion element in which a p-n junction or ap-i-n junction is formed may be used.

The photoelectric conversion element 220 may be formed using a substancethat has a function of absorbing a radiation and generating electriccharges. Examples of the substance that has a function of absorbing aradiation and generating electric charges include selenium, lead iodide,mercury iodide, gallium arsenide, cadmium telluride, and cadmium zincalloy.

For example, when selenium is used for the photoelectric conversionelement 220, the photoelectric conversion element 220 can have a lightabsorption coefficient in a wide wavelength range, such as visiblelight, ultraviolet light, infrared light, X-rays, and gamma rays.

One pixel 211 included in the imaging device 200 may include thesubpixel 212 with a first filter in addition to the subpixel 212illustrated in FIGS. 36A and 36B.

<Configuration Example 2 of Pixel>

An example of a pixel including a transistor using silicon and atransistor using an oxide semiconductor is described below.

FIGS. 38A and 38B are each a cross-sectional view of an element includedin an imaging device. The imaging device illustrated in FIG. 38Aincludes a transistor 351 including silicon over a silicon substrate300, transistors 352 and 353 which include an oxide semiconductor andare stacked over the transistor 351, and a photodiode 360 provided in asilicon substrate 300. The transistors and the photodiode 360 areelectrically connected to various plugs 370 and wirings 371. Inaddition, an anode 361 of the photodiode 360 is electrically connectedto the plug 370 through a low-resistance region 363.

The imaging device includes a layer 310 including the transistor 351provided on the silicon substrate 300 and the photodiode 360 provided inthe silicon substrate 300, a layer 320 which is in contact with thelayer 310 and includes the wirings 371, a layer 330 which is in contactwith the layer 320 and includes the transistors 352 and 353, and a layer340 which is in contact with the layer 330 and includes a wiring 372 anda wiring 373.

In the example of cross-sectional view in FIG. 38A, a light-receivingsurface of the photodiode 360 is provided on the side opposite to asurface of the silicon substrate 300 where the transistor 351 is formed.With this structure, a light path can be secured without an influence ofthe transistors and the wirings. Thus, a pixel with a high apertureratio can be formed. Note that the light-receiving surface of thephotodiode 360 can be the same as the surface where the transistor 351is formed.

In the case where a pixel is formed with use of only transistors usingan oxide semiconductor, the layer 310 may include the transistor usingan oxide semiconductor. Alternatively, the layer 310 may be omitted, andthe pixel may include only transistors using an oxide semiconductor.

In the case where a pixel is formed with use of only transistors usingsilicon, the layer 330 may be omitted. An example of a cross-sectionalview in which the layer 330 is not provided is shown in FIG. 38B.

Note that the silicon substrate 300 may be an SOI substrate.Furthermore, the silicon substrate 300 can be replaced with a substratemade of germanium, silicon germanium, silicon carbide, gallium arsenide,aluminum gallium arsenide, indium phosphide, gallium nitride, or anorganic semiconductor.

Here, an insulator 380 is provided between the layer 310 including thetransistor 351 and the photodiode 360 and the layer 330 including thetransistors 352 and 353. However, there is no limitation on the positionof the insulator 380.

Hydrogen in an insulator provided in the vicinity of a channel formationregion of the transistor 351 terminates dangling bonds of silicon;accordingly, the reliability of the transistor 351 can be improved. Incontrast, hydrogen in the insulator provided in the vicinity of thetransistor 352, the transistor 353, and the like becomes one of factorsgenerating a carrier in the oxide semiconductor. Thus, the hydrogen maycause a reduction of the reliability of the transistor 352, thetransistor 353, and the like. Therefore, in the case where thetransistor using an oxide semiconductor is provided over the transistorusing a silicon-based semiconductor, it is preferable that the insulator380 having a function of blocking hydrogen be provided between thetransistors. When the hydrogen is confined below the insulator 380, thereliability of the transistor 351 can be improved. In addition, thehydrogen can be prevented from being diffused from a part below theinsulator 380 to a part above the insulator 380; thus, the reliabilityof the transistor 352, the transistor 353, and the like can beincreased.

As the insulator 380, an insulator having a function of blocking oxygenor hydrogen is used, for example.

In the cross-sectional view in FIG. 38A, the photodiode 360 in the layer310 and the transistor in the layer 330 can be formed so as to overlapwith each other. Thus, the degree of integration of pixels can beincreased. In other words, the resolution of the imaging device can beincreased.

As illustrated in FIG. 39A1 and FIG. 39B1, part or the whole of theimaging device can be bent. FIG. 39A1 illustrates a state in which theimaging device is bent in the direction of a dashed-dotted line X1-X2.FIG. 39A2 is a cross-sectional view illustrating a portion indicated bythe dashed-dotted line X1-X2 in FIG. 39A1. FIG. 39A3 is across-sectional view illustrating a portion indicated by a dashed-dottedline Y1-Y2 in FIG. 39A1.

FIG. 39B1 illustrates a state where the imaging device is bent in thedirection of a dashed-dotted line X3-X4 and the direction of adashed-dotted line Y3-Y4. FIG. 39B2 is a cross-sectional viewillustrating a portion indicated by the dashed-dotted line X3-X4 in FIG.39B1. FIG. 39B3 is a cross-sectional view illustrating a portionindicated by the dashed-dotted line Y3-Y4 in FIG. 39B1.

The bent imaging device enables the curvature of field and astigmatismto be reduced. Thus, the optical design of lens and the like, which isused in combination of the imaging device, can be facilitated. Forexample, the number of lenses used for aberration correction can bereduced; accordingly, a reduction of size or weight of electronicdevices using the imaging device, and the like, can be achieved. Inaddition, the quality of a captured image can be improved.

The structures described in this embodiment can be used in appropriatecombination with any of the structures described in the otherembodiments.

Embodiment 6

In this embodiment, examples of CPUs including semiconductor devicessuch as the transistor of one embodiment of the present invention andthe above-described memory device will be described.

<Configuration of CPU>

FIG. 40 is a block diagram illustrating a configuration example of a CPUincluding any of the above-described transistors as a component.

The CPU illustrated in FIG. 40 includes, over a substrate 1190, anarithmetic logic unit (ALU) 1191, an ALU controller 1192, an instructiondecoder 1193, an interrupt controller 1194, a timing controller 1195, aregister 1196, a register controller 1197, a bus interface 1198, arewritable ROM 1199, and a ROM interface 1189. A semiconductorsubstrate, an SOI substrate, a glass substrate, or the like is used asthe substrate 1190. The ROM 1199 and the ROM interface 1189 may beprovided over a separate chip. Needless to say, the CPU in FIG. 40 isjust an example in which the configuration has been simplified, and anactual CPU may have a variety of configurations depending on theapplication. For example, the CPU may have the following configuration:a structure including the CPU illustrated in FIG. 40 or an arithmeticcircuit is considered as one core; a plurality of such cores areincluded; and the cores operate in parallel. The number of bits that theCPU can process in an internal arithmetic circuit or in a data bus canbe 8, 16, 32, or 64, for example.

An instruction that is input to the CPU through the bus interface 1198is input to the instruction decoder 1193 and decoded therein, and then,input to the ALU controller 1192, the interrupt controller 1194, theregister controller 1197, and the timing controller 1195.

The ALU controller 1192, the interrupt controller 1194, the registercontroller 1197, and the timing controller 1195 conduct various controlsin accordance with the decoded instruction. Specifically, the ALUcontroller 1192 generates signals for controlling the operation of theALU 1191. While the CPU is executing a program, the interrupt controller1194 judges an interrupt request from an external input/output device ora peripheral circuit on the basis of its priority or a mask state, andprocesses the request. The register controller 1197 generates an addressof the register 1196, and reads/writes data from/to the register 1196 inaccordance with the state of the CPU.

The timing controller 1195 generates signals for controlling operationtimings of the ALU 1191, the ALU controller 1192, the instructiondecoder 1193, the interrupt controller 1194, and the register controller1197. For example, the timing controller 1195 includes an internal clockgenerator for generating an internal clock signal based on a referenceclock signal, and supplies the internal clock signal to the abovecircuits.

In the CPU illustrated in FIG. 40, a memory cell is provided in theregister 1196. For the memory cell of the register 1196, any of theabove-described transistors, the above-described memory device, or thelike can be used.

In the CPU illustrated in FIG. 40, the register controller 1197 selectsoperation of retaining data in the register 1196 in accordance with aninstruction from the ALU 1191. That is, the register controller 1197selects whether data is retained by a flip-flop or by a capacitor in thememory cell included in the register 1196. When data retention by theflip-flop is selected, a power supply voltage is supplied to the memorycell in the register 1196. When data retention by the capacitor isselected, the data is rewritten in the capacitor, and supply of a powersupply voltage to the memory cell in the register 1196 can be stopped.

FIG. 41 is an example of a circuit diagram of a memory element 1200 thatcan be used as the register 1196. The memory element 1200 includes acircuit 1201 in which stored data is volatile when power supply isstopped, a circuit 1202 in which stored data is nonvolatile even whenpower supply is stopped, a switch 1203, a switch 1204, a logic element1206, a capacitor 1207, and a circuit 1220 having a selecting function.The circuit 1202 includes a capacitor 1208, a transistor 1209, and atransistor 1210. Note that the memory element 1200 may further includeanother element such as a diode, a resistor, or an inductor, as needed.

Here, the above-described memory device can be used as the circuit 1202.When supply of a power supply voltage to the memory element 1200 isstopped, GND (0 V) or a potential at which the transistor 1209 in thecircuit 1202 is turned off continues to be input to a gate of thetransistor 1209. For example, the gate of the transistor 1209 isgrounded through a load such as a resistor.

Shown here is an example in which the switch 1203 is a transistor 1213having one conductivity type (e.g., an n-channel transistor) and theswitch 1204 is a transistor 1214 having a conductivity type opposite tothe one conductivity type (e.g., a p-channel transistor). A firstterminal of the switch 1203 corresponds to one of a source and a drainof the transistor 1213, a second terminal of the switch 1203 correspondsto the other of the source and the drain of the transistor 1213, andconduction or non-conduction between the first terminal and the secondterminal of the switch 1203 (i.e., the on/off state of the transistor1213) is selected by a control signal RD input to a gate of thetransistor 1213. A first terminal of the switch 1204 corresponds to oneof a source and a drain of the transistor 1214, a second terminal of theswitch 1204 corresponds to the other of the source and the drain of thetransistor 1214, and conduction or non-conduction between the firstterminal and the second terminal of the switch 1204 (i.e., the on/offstate of the transistor 1214) is selected by the control signal RD inputto a gate of the transistor 1214.

One of a source and a drain of the transistor 1209 is electricallyconnected to one of a pair of electrodes of the capacitor 1208 and agate of the transistor 1210. Here, the connection portion is referred toas a node M2. One of a source and a drain of the transistor 1210 iselectrically connected to a line which can supply a low power supplypotential (e.g., a GND line), and the other thereof is electricallyconnected to the first terminal of the switch 1203 (the one of thesource and the drain of the transistor 1213). The second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) is electrically connected to the first terminal of the switch 1204(the one of the source and the drain of the transistor 1214). The secondterminal of the switch 1204 (the other of the source and the drain ofthe transistor 1214) is electrically connected to a line which cansupply a power supply potential VDD. The second terminal of the switch1203 (the other of the source and the drain of the transistor 1213), thefirst terminal of the switch 1204 (the one of the source and the drainof the transistor 1214), an input terminal of the logic element 1206,and one of a pair of electrodes of the capacitor 1207 are electricallyconnected to each other. Here, the connection portion is referred to asa node M1. The other of the pair of electrodes of the capacitor 1207 canbe supplied with a constant potential. For example, the other of thepair of electrodes of the capacitor 1207 can be supplied with a lowpower supply potential (e.g., GND) or a high power supply potential(e.g., VDD). The other of the pair of electrodes of the capacitor 1207is electrically connected to the line which can supply a low powersupply potential (e.g., a GND line). The other of the pair of electrodesof the capacitor 1208 can be supplied with a constant potential. Forexample, the other of the pair of electrodes of the capacitor 1208 canbe supplied with the low power supply potential (e.g., GND) or the highpower supply potential (e.g., VDD). The other of the pair of electrodesof the capacitor 1208 is electrically connected to the line which cansupply a low power supply potential (e.g., a GND line).

The capacitor 1207 and the capacitor 1208 are not necessarily providedas long as the parasitic capacitance of the transistor, the wiring, orthe like is actively utilized.

A control signal WE is input to the gate of the transistor 1209. As foreach of the switch 1203 and the switch 1204, a conduction state or anon-conduction state between the first terminal and the second terminalis selected by the control signal RD which is different from the controlsignal WE. When the first terminal and the second terminal of one of theswitches are in the conduction state, the first terminal and the secondterminal of the other of the switches are in the non-conduction state.

A signal corresponding to data retained in the circuit 1201 is input tothe other of the source and the drain of the transistor 1209. FIG. 41illustrates an example in which a signal output from the circuit 1201 isinput to the other of the source and the drain of the transistor 1209.The logic value of a signal output from the second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) is inverted by the logic element 1206, and the inverted signal isinput to the circuit 1201 through the circuit 1220.

In the example of FIG. 41, a signal output from the second terminal ofthe switch 1203 (the other of the source and the drain of the transistor1213) is input to the circuit 1201 through the logic element 1206 andthe circuit 1220; however, one embodiment of the present invention isnot limited thereto. The signal output from the second terminal of theswitch 1203 (the other of the source and the drain of the transistor1213) may be input to the circuit 1201 without its logic value beinginverted. For example, in the case where the circuit 1201 includes anode in which a signal obtained by inversion of the logic value of asignal input from the input terminal is retained, the signal output fromthe second terminal of the switch 1203 (the other of the source and thedrain of the transistor 1213) can be input to the node.

In FIG. 41, the transistors included in the memory element 1200 exceptthe transistor 1209 can each be a transistor in which a channel isformed in a film formed using a semiconductor other than an oxidesemiconductor or in the substrate 1190. For example, the transistor canbe a transistor whose channel is formed in a silicon film or a siliconsubstrate. Alternatively, all the transistors in the memory element 1200may be a transistor in which a channel is formed in an oxidesemiconductor. Further alternatively, in the memory element 1200, atransistor in which a channel is formed in an oxide semiconductor may beincluded besides the transistor 1209, and a transistor in which achannel is formed in a layer formed using a semiconductor other than anoxide semiconductor or in the substrate 1190 can be used for the rest ofthe transistors.

As the circuit 1201 in FIG. 41, for example, a flip-flop circuit can beused. As the logic element 1206, for example, an inverter or a clockedinverter can be used.

In a period during which the memory element 1200 is not supplied withthe power supply voltage, the semiconductor device of one embodiment ofthe present invention can retain data stored in the circuit 1201 by thecapacitor 1208 which is provided in the circuit 1202.

The off-state current of a transistor in which a channel is formed in anoxide semiconductor is extremely low. For example, the off-state currentof a transistor in which a channel is formed in an oxide semiconductoris significantly lower than that of a transistor in which a channel isformed in silicon having crystallinity. Thus, when the transistor isused as the transistor 1209, a signal held in the capacitor 1208 isretained for a long time also in a period during which the power supplyvoltage is not supplied to the memory element 1200. The memory element1200 can accordingly retain the stored content (data) also in a periodduring which the supply of the power supply voltage is stopped.

Since the above-described memory element performs pre-charge operationwith the switch 1203 and the switch 1204, the time required for thecircuit 1201 to retain original data again after the supply of the powersupply voltage is restarted can be shortened.

In the circuit 1202, a signal retained by the capacitor 1208 is input tothe gate of the transistor 1210. Therefore, after supply of the powersupply voltage to the memory element 1200 is restarted, the state of thetransistor 1210 (on state or the off state) is determined depending onthe signal retained by the capacitor 1208, and the signal can be readfrom the circuit 1202. Consequently, an original signal can beaccurately read even when a potential corresponding to the signalretained by the capacitor 1208 varies to some degree.

By applying the above-described memory element 1200 to a memory devicesuch as a register or a cache memory included in a processor, data inthe memory device can be prevented from being lost owing to the stop ofthe supply of the power supply voltage. Furthermore, shortly after thesupply of the power supply voltage is restarted, the memory device canbe returned to the same state as that before the power supply isstopped. Therefore, the power supply can be stopped even for a shorttime in the processor or one or a plurality of logic circuits includedin the processor, resulting in lower power consumption.

Although the memory element 1200 is used in a CPU, the memory element1200 can also be used in an LSI such as a digital signal processor(DSP), a custom LSI, or a programmable logic device (PLD) and a radiofrequency (RF) device.

The structures described in this embodiment can be used in appropriatecombination with any of the structures described in the otherembodiments.

Embodiment 7

In this embodiment, a display device including the transistor of oneembodiment of the present invention and the like is described withreference to FIGS. 42A to 42C and FIGS. 43A and 43B.

<Configuration of Display Device>

Examples of a display element provided in the display device include aliquid crystal element (also referred to as a liquid crystal displayelement) and a light-emitting element (also referred to as alight-emitting display element). The light-emitting element includes, inits category, an element whose luminance is controlled by a current orvoltage, and specifically includes, in its category, an inorganicelectroluminescent (EL) element, an organic EL element, and the like. Adisplay device including an EL element (EL display device) and a displaydevice including a liquid crystal element (liquid crystal displaydevice) are described below as examples of the display device.

Note that the display device described below includes in its category apanel in which a display element is sealed and a module in which an ICsuch as a controller is mounted on the panel.

The display device described below refers to an image display device ora light source (including a lighting device). The display deviceincludes any of the following modules: a module provided with aconnector such as an FPC or TCP; a module in which a printed wiringboard is provided at the end of TCP; and a module in which an integratedcircuit (IC) is mounted directly on a display element by a COG method.

FIGS. 42A to 42C illustrate an example of an EL display device of oneembodiment of the present invention. FIG. 42A is a circuit diagram of apixel in an EL display device. FIG. 42B is a plan view showing the wholeof the EL display device. FIG. 42C is a cross-sectional view taken alongpart of dashed-dotted line M-N in FIG. 42B.

FIG. 42A illustrates an example of a circuit diagram of a pixel used inan EL display device.

Note that in this specification and the like, it might be possible forthose skilled in the art to constitute one embodiment of the inventioneven when portions to which all the terminals of an active element(e.g., a transistor or a diode), a passive element (e.g., a capacitor ora resistor), or the like are connected are not specified. In otherwords, one embodiment of the invention can be clear even when connectionportions are not specified. Furthermore, in the case where a connectionportion is disclosed in this specification and the like, it can bedetermined that one embodiment of the invention in which a connectionportion is not specified is disclosed in this specification and thelike, in some cases. Particularly in the case where the number ofportions to which a terminal is connected might be more than one, it isnot necessary to specify the portions to which the terminal isconnected. Therefore, it might be possible to constitute one embodimentof the invention by specifying only portions to which some of terminalsof an active element (e.g., a transistor or a diode), a passive element(e.g., a capacitor or a resistor), or the like are connected.

Note that in this specification and the like, it might be possible forthose skilled in the art to specify the invention when at least theconnection portion of a circuit is specified. Alternatively, it might bepossible for those skilled in the art to specify the invention when atleast a function of a circuit is specified. In other words, when afunction of a circuit is specified, one embodiment of the presentinvention can be clear. Furthermore, it can be determined that oneembodiment of the present invention whose function is specified isdisclosed in this specification and the like in some cases. Therefore,when a connection portion of a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when a function is notspecified, and one embodiment of the invention can be constituted.Alternatively, when a function of a circuit is specified, the circuit isdisclosed as one embodiment of the invention even when a connectionportion is not specified, and one embodiment of the invention can beconstituted.

The EL display device illustrated in FIG. 42A includes a switchingelement 743, a transistor 741, a capacitor 742, and a light-emittingelement 719.

Note that FIG. 42A and the like each illustrate an example of a circuitstructure; therefore, a transistor can be provided additionally. Incontrast, for each node in FIG. 42A, it is possible not to provide anadditional transistor, switch, passive element, or the like.

A gate of the transistor 741 is electrically connected to one terminalof the switching element 743 and one electrode of the capacitor 742. Asource of the transistor 741 is electrically connected to the otherelectrode of the capacitor 742 and one electrode of the light-emittingelement 719. A drain of the transistor 741 is supplied with a powersupply potential VDD. The other terminal of the switching element 743 iselectrically connected to a signal line 744. A constant potential issupplied to the other electrode of the light-emitting element 719. Theconstant potential is a ground potential GND or a potential lower thanthe ground potential GND.

It is preferable to use a transistor as the switching element 743. Whenthe transistor is used as the switching element, the area of a pixel canbe reduced, so that the EL display device can have high resolution. Asthe switching element 743, a transistor formed through the same step asthe transistor 741 can be used, so that EL display devices can bemanufactured with high productivity. Note that as the transistor 741and/or the switching element 743, any of the above-described transistorscan be used, for example.

FIG. 42B is a plan view of the EL display device. The EL display deviceincludes a substrate 700, a substrate 750, a sealant 734, a drivercircuit 735, a driver circuit 736, a pixel 737, and an FPC 732. Thesealant 734 is provided between the substrate 700 and the substrate 750so as to surround the pixel 737, the driver circuit 735, and the drivercircuit 736. Note that the driver circuit 735 and/or the driver circuit736 may be provided outside the sealant 734.

FIG. 42C is a cross-sectional view of the EL display device taken alongpart of dashed-dotted line M-N in FIG. 42B.

FIG. 42C illustrates a structure of the transistor 741 including aconductor 704 a over the substrate 700; an insulator 712 a over theconductor 704 a; an insulator 712 b over the insulator 712 a;semiconductors 706 a and 706 b that are over the insulator 712 b andoverlap with the conductor 704 a; a conductor 716 a and a conductor 716b in contact with the semiconductors 706 a and 706 b; an insulator 718 aover the semiconductor 706 b, the conductor 716 a, and the conductor 716b; an insulator 718 b over the insulator 718 a; an insulator 718 c overthe insulator 718 b; and a conductor 714 a that is over the insulator718 c and overlaps with the semiconductor 706 b. Note that the structureof the transistor 741 is just an example; the transistor 741 may have astructure different from that illustrated in FIG. 42C.

Thus, in the transistor 741 illustrated in FIG. 42C, the conductor 704 aserves as a gate electrode, the insulator 712 a and the insulator 712 bserve as a gate insulator, the conductor 716 a serves as a sourceelectrode, the conductor 716 b serves as a drain electrode, theinsulator 718 a, the insulator 718 b, and the insulator 718 c serve as agate insulator, and the conductor 714 a serves as a gate electrode. Notethat in some cases, electrical characteristics of the semiconductors 706a and 706 b change if light enters the semiconductors 706 a and 706 b.To prevent this, it is preferable that one or more of the conductor 704a, the conductor 716 a, the conductor 716 b, and the conductor 714 ahave a light-blocking property.

Note that the interface between the insulator 718 a and the insulator718 b is indicated by a broken line. This means that the boundarybetween them is not clear in some cases. For example, in the case wherethe insulator 718 a and the insulator 718 b are formed using insulatorsof the same kind, the insulator 718 a and the insulator 718 b are notdistinguished from each other in some cases depending on an observationmethod.

FIG. 42C illustrates a structure of the capacitor 742 including aconductor 704 b over the substrate; the insulator 712 a over theconductor 704 b; the insulator 712 b over the insulator 712 a; theconductor 716 a that is over the insulator 712 b and overlaps with theconductor 704 b; the insulator 718 a over the conductor 716 a; theinsulator 718 b over the insulator 718 a; the insulator 718 c over theinsulator 718 b; and a conductor 714 b that is over the insulator 718 cand overlaps with the conductor 716 a. In this structure, part of theinsulator 718 a and part of the insulator 718 b are removed in a regionwhere the conductor 716 a and the conductor 714 b overlap with eachother.

In the capacitor 742, each of the conductor 704 b and the conductor 714b functions as one electrode, and the conductor 716 a functions as theother electrode.

Thus, the capacitor 742 can be formed using a film of the transistor741. The conductor 704 a and the conductor 704 b are preferablyconductors of the same kind, in which case the conductor 704 a and theconductor 704 b can be formed through the same step. Furthermore, theconductor 714 a and the conductor 714 b are preferably conductors of thesame kind, in which case the conductor 714 a and the conductor 714 b canbe formed through the same step.

The capacitor 742 illustrated in FIG. 42C has a large capacitance perarea occupied by the capacitor. Therefore, the EL display deviceillustrated in FIG. 42C has high display quality. Note that although thecapacitor 742 illustrated in FIG. 42C has the structure in which thepart of the insulator 718 a and the part of the insulator 718 b areremoved to reduce the thickness of the region where the conductor 716 aand the conductor 714 b overlap with each other, the structure of thecapacitor according to one embodiment of the present invention is notlimited to the structure. For example, a structure in which part of theinsulator 718 c is removed to reduce the thickness of the region wherethe conductor 716 a and the conductor 714 b overlap with each other maybe used.

An insulator 720 is provided over the transistor 741 and the capacitor742. Here, the insulator 720 may have an opening reaching the conductor716 a that serves as the source electrode of the transistor 741. Aconductor 781 is provided over the insulator 720. The conductor 781 maybe electrically connected to the transistor 741 through the opening inthe insulator 720.

A partition wall 784 having an opening reaching the conductor 781 isprovided over the conductor 781. A light-emitting layer 782 in contactwith the conductor 781 through the opening provided in the partitionwall 784 is provided over the partition wall 784. A conductor 783 isprovided over the light-emitting layer 782. A region where the conductor781, the light-emitting layer 782, and the conductor 783 overlap withone another functions as the light-emitting element 719.

So far, examples of the EL display device are described. Next, anexample of a liquid crystal display device is described.

FIG. 43A is a circuit diagram illustrating a configuration example of apixel of a liquid crystal display device. A pixel shown in FIGS. 43A and43B includes a transistor 751, a capacitor 752, and an element (liquidcrystal element) 753 in which a space between a pair of electrodes isfilled with a liquid crystal.

One of a source and a drain of the transistor 751 is electricallyconnected to a signal line 755, and a gate of the transistor 751 iselectrically connected to a scan line 754.

One electrode of the capacitor 752 is electrically connected to theother of the source and the drain of the transistor 751, and the otherelectrode of the capacitor 752 is electrically connected to a wiring towhich a common potential is supplied.

One electrode of the liquid crystal element 753 is electricallyconnected to the other of the source and the drain of the transistor751, and the other electrode of the liquid crystal element 753 iselectrically connected to a wiring to which a common potential issupplied. The common potential supplied to the wiring electricallyconnected to the other electrode of the capacitor 752 may be differentfrom that supplied to the other electrode of the liquid crystal element753.

Note that the description of the liquid crystal display device is madeon the assumption that the plan view of the liquid crystal displaydevice is similar to that of the EL display device. FIG. 43B is across-sectional view of the liquid crystal display device taken alongdashed-dotted line M-N in FIG. 42B. In FIG. 43B, the FPC 732 isconnected to the wiring 733 a via the terminal 731. Note that the wiring733 a may be formed using the same kind of conductor as the conductor ofthe transistor 751 or using the same kind of semiconductor as thesemiconductor of the transistor 751.

For the transistor 751, the description of the transistor 741 isreferred to. For the capacitor 752, the description of the capacitor 742is referred to. Note that the structure of the capacitor 752 in FIG. 43Bcorresponds to, but is not limited to, the structure of the capacitor742 in FIG. 42C.

Note that in the case where an oxide semiconductor is used as thesemiconductor of the transistor 751, the off-state current of thetransistor 751 can be extremely small. Therefore, an electric chargeheld in the capacitor 752 is unlikely to leak, so that the voltageapplied to the liquid crystal element 753 can be maintained for a longtime. Accordingly, the transistor 751 can be kept off during a period inwhich moving images with few motions or a still image are/is displayed,whereby power for the operation of the transistor 751 can be saved inthat period; accordingly a liquid crystal display device with low powerconsumption can be provided. Furthermore, the area occupied by thecapacitor 752 can be reduced; thus, a liquid crystal display device witha high aperture ratio or a high-resolution liquid crystal display devicecan be provided.

An insulator 721 is provided over the transistor 751 and the capacitor752. The insulator 721 has an opening reaching the transistor 751 (notillustrated). A conductor 791 is provided over the insulator 721. Theconductor 791 is electrically connected to the transistor 751 throughthe opening in the insulator 721.

An insulator 792 functioning as an alignment film is provided over theconductor 791. A liquid crystal layer 793 is provided over the insulator792. An insulator 794 functioning as an alignment film is provided overthe liquid crystal layer 793. A spacer 795 is provided over theinsulator 794. A conductor 796 is provided over the spacer 795 and theinsulator 794. A substrate 797 is provided over the conductor 796.

Owing to the above-described structure, a display device including acapacitor occupying a small area, a display device with high displayquality, or a high-resolution display device can be provided.

For example, in this specification and the like, a display element, adisplay device which is a device including a display element, alight-emitting element, and a light-emitting device which is a deviceincluding a light-emitting element can employ various modes or caninclude various elements. For example, the display element, the displaydevice, the light-emitting element, or the light-emitting deviceincludes at least one of a light-emitting diode (LED) for white, red,green, blue, or the like, a transistor (a transistor that emits lightdepending on current), an electron emitter, a liquid crystal element,electronic ink, an electrophoretic element, a grating light valve (GLV),a plasma display panel (PDP), a display element using micro electromechanical systems (MEMS), a digital micromirror device (DMD), a digitalmicro shutter (DMS), an interferometric modulator display (IMOD)element, a MEMS shutter display element, an optical-interference-typeMEMS display element, an electrowetting element, a piezoelectric ceramicdisplay, and a display element including a carbon nanotube. Displaymedia whose contrast, luminance, reflectivity, transmittance, or thelike is changed by electrical or magnetic effect may be included.

Note that examples of display devices having EL elements include an ELdisplay. Examples of a display device including an electron emitterinclude a field emission display (FED), an SED-type flat panel display(SED: surface-conduction electron-emitter display), and the like.Examples of display devices including liquid crystal elements include aliquid crystal display (e.g., a transmissive liquid crystal display, atransflective liquid crystal display, a reflective liquid crystaldisplay, a direct-view liquid crystal display, or a projection liquidcrystal display). Examples of a display devices having electronic ink oran electrophoretic element include electronic paper. In the case of atransflective liquid crystal display or a reflective liquid crystaldisplay, some of or all of pixel electrodes function as reflectiveelectrodes. For example, some or all of pixel electrodes are formed tocontain aluminum, silver, or the like. In such a case, a memory circuitsuch as an SRAM can be provided under the reflective electrodes. Thus,the power consumption can be further reduced.

Note that in the case of using an LED, graphene or graphite may beprovided under an electrode or a nitride semiconductor of the LED.Graphene or graphite may be a multilayer film in which a plurality oflayers are stacked. As described above, provision of graphene orgraphite enables easy formation of a nitride semiconductor thereover,such as an n-type GaN semiconductor including crystals. Furthermore, ap-type GaN semiconductor including crystals or the like can be providedthereover, and thus the LED can be formed. Note that an AlN layer may beprovided between the n-type GaN semiconductor including crystals andgraphene or graphite. The GaN semiconductors included in the LED may beformed by MOCVD. Note that when the graphene is provided, the GaNsemiconductors included in the LED can also be formed by a sputteringmethod.

The structures described in this embodiment can be used in appropriatecombination with any of the structures described in the otherembodiments.

Embodiment 8

In this embodiment, electronic devices each including the transistor orthe like of one embodiment of the present invention are described.

<Electronic Device>

The semiconductor device of one embodiment of the present invention canbe used for display devices, personal computers, or image reproducingdevices provided with recording media (typically, devices whichreproduce the content of recording media such as digital versatile discs(DVDs) and have displays for displaying the reproduced images). Otherexamples of electronic devices that can be equipped with thesemiconductor device of one embodiment of the present invention aremobile phones, game machines including portable game consoles, portabledata terminals, e-book readers, cameras such as video cameras anddigital still cameras, goggle-type displays (head mounted displays),navigation systems, audio reproducing devices (e.g., car audio systemsand digital audio players), copiers, facsimiles, printers, multifunctionprinters, automated teller machines (ATM), and vending machines. FIGS.44A to 44F illustrate specific examples of these electronic devices.

FIG. 44A illustrates a portable game console including a housing 901, ahousing 902, a display portion 903, a display portion 904, a microphone905, a speaker 906, an operation key 907, a stylus 908, and the like.Although the portable game console in FIG. 44A has the two displayportions 903 and 904, the number of display portions included in aportable game console is not limited to this.

FIG. 44B illustrates a portable data terminal including a first housing911, a second housing 912, a first display portion 913, a second displayportion 914, a joint 915, an operation key 916, and the like. The firstdisplay portion 913 is provided in the first housing 911, and the seconddisplay portion 914 is provided in the second housing 912. The firsthousing 911 and the second housing 912 are connected to each other withthe joint 915, and the angle between the first housing 911 and thesecond housing 912 can be changed with the joint 915. An image on thefirst display portion 913 may be switched in accordance with the angleat the joint 915 between the first housing 911 and the second housing912. A display device with a position input function may be used as atleast one of the first display portion 913 and the second displayportion 914. Note that the position input function can be added byproviding a touch panel in a display device. Alternatively, the positioninput function can be added by providing a photoelectric conversionelement called a photosensor in a pixel portion of a display device.

FIG. 44C illustrates a notebook personal computer, which includes ahousing 921, a display portion 922, a keyboard 923, a pointing device924, and the like.

FIG. 44D illustrates an electric refrigerator-freezer, which includes ahousing 931, a door for a refrigerator 932, a door for a freezer 933,and the like.

FIG. 44E illustrates a video camera, which includes a first housing 941,a second housing 942, a display portion 943, operation keys 944, a lens945, a joint 946, and the like. The operation keys 944 and the lens 945are provided for the first housing 941, and the display portion 943 isprovided for the second housing 942. The first housing 941 and thesecond housing 942 are connected to each other with the joint 946, andthe angle between the first housing 941 and the second housing 942 canbe changed with the joint 946. Images displayed on the display portion943 may be switched in accordance with the angle at the joint 946between the first housing 941 and the second housing 942.

FIG. 44F illustrates a car including a car body 951, wheels 952, adashboard 953, lights 954, and the like.

This embodiment of the present invention has been described in the aboveembodiments. Note that one embodiment of the present invention is notlimited thereto. That is, various embodiments of the invention aredescribed in this embodiment and the like, and one embodiment of thepresent invention is not limited to a particular embodiment. Forexample, an example in which a channel formation region, source anddrain regions, and the like of a transistor include an oxidesemiconductor is described as one embodiment of the present invention;however, one embodiment of the present invention is not limited to thisexample. Alternatively, depending on circumstances or conditions,various semiconductors may be included in various transistors, a channelformation region of a transistor, a source region or a drain region of atransistor, or the like of one embodiment of the present invention.Depending on circumstances or conditions, at least one of silicon,germanium, silicon germanium, silicon carbide, gallium arsenide,aluminum gallium arsenide, indium phosphide, gallium nitride, an organicsemiconductor, and the like may be included in various transistors, achannel formation region of a transistor, a source region or a drainregion of a transistor, or the like of one embodiment of the presentinvention. Alternatively, depending on circumstances or conditions, anoxide semiconductor is not necessarily included in various transistors,a channel formation region of a transistor, a source region or a drainregion of a transistor, or the like of one embodiment of the presentinvention, for example.

Example 1

In this example, the results of evaluating the composition of a W—Sifilm which is used as a conductor of a transistor or the like will bedescribed.

The sample was fabricated in such a manner that a 50-nm-thick siliconoxide (SiO_(x)) was formed over a Si wafer by a thermal oxidationmethod, and a 50-nm-thick W—Si film was formed thereon with a sputteringapparatus.

The W—Si film was formed under the following conditions: a sputteringapparatus using a W—Si target having a composition ratio of W:Si=1:2.7(atomic ratio) was used, an atmosphere containing an argon gas at 50sccm was used, the pressure was controlled to 0.4 Pa, the substratetemperature was set at room temperature, and a power of 1 kW from a DCpower source was applied to the target.

The samples fabricated in the above manner were measured by X-rayphotoelectron spectroscopy (XPS). The measurement result of the samplewhich was not subjected to heat treatment is shown in FIG. 45A. Themeasurement result of the sample which was subjected to heat treatmentin an atmospheric atmosphere at 400° C. for one hour is shown in FIG.45B. Note that concentration profile in the depth direction was measuredfrom the surface of the W—Si film by XPS.

In the XPS result in FIG. 45A, a region with high concentration of Siand O is measured in the vicinity of the surface of the W—Si film, whichindicates that a layer of SiO, is formed. In the XPS result in FIG. 45B,0 concentration on the surface of the W—Si film is only slightlyincreased as compared to that of the result of FIG. 45A even when theW—Si film is subjected to heat treatment.

According to these results, it is found that the W—Si film is hardlyoxidized even when it is subjected to heat treatment.

Example 2

In this example, the results of observing a cross section of a W—Si filmwhich is used as a conductor of a transistor or the like with a scanningtransmission electron microscope (STEM) are described.

The sample was fabricated in such a manner that a 50-nm-thick siliconoxide (SiO_(x)) was formed over a Si wafer by a thermal oxidationmethod, and a 50-nm-thick W—Si film was formed thereon with a sputteringapparatus.

The W—Si film was formed under the following conditions: a sputteringapparatus using a W—Si target having a composition ratio of W:Si=1:2.7(atomic ratio) was used, an atmosphere containing an argon gas at 50sccm was used, the pressure was controlled to 0.4 Pa, the substratetemperature was set at room temperature, and a power of 1 kW from a DCpower source was applied to the target.

The sample fabricated in the above manner is subjected to heat treatmentin an atmospheric atmosphere at 400° C. for one hour. FIG. 46A shows across-sectional image of the sample observed by STEM. For comparison, a50-nm-thick W film was formed instead of the W—Si film, and the film wassubjected to heat treatment in an atmospheric atmosphere at 400° C. forone hour. FIG. 46B shows a cross-sectional image of the sample of the Wfilm observed by STEM.

As shown in the STEM image in FIG. 46A, a thin oxide film is observed ona surface of the W—Si film even in the sample subjected to heattreatment, which means that the W—Si film is hardly oxidized. Incontrast, as shown in the STEM image in FIG. 46B, a thick oxide film isformed on the surface of the W film.

The results show that the W—Si film has higher oxidation resistance thanthe W film.

The above results show that the use of the W—Si film for a conductor ofa transistor can suppress an increase in electric resistance due tooxidation of the conductor through heat treatment or the like inmanufacturing the transistor, whereby a transistor can have favorableand stable electrical characteristics.

This application is based on Japanese Patent Application serial no.2015-140794 filed with Japan Patent Office on Jul. 14, 2015, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. A semiconductor device comprising: an oxidesemiconductor; an insulator in contact with the oxide semiconductor; afirst conductor overlapping with the oxide semiconductor with theinsulator between the oxide semiconductor and the first conductor; and asecond conductor and a third conductor each in contact with the oxidesemiconductor and the insulator, wherein one of the second conductor andthe third conductor includes a surface region comprising an amorphouspart, wherein the surface region comprises silicon and oxygen, andwherein the oxide semiconductor and the insulator each contains In, Ga,and Zn.
 3. The semiconductor device according to claim 2, wherein asilicon concentration in the surface region is greater than or equal to5 atomic % and less than or equal to 70 atomic % measured by Rutherfordback scattering spectrometry.
 4. The semiconductor device according toclaim 2, wherein a thickness of the surface region is greater than orequal to 0.2 nm and less than or equal to 20 nm.
 5. The semiconductordevice according to claim 2, wherein the insulator comprises an oxidecontaining at least one metal element contained in the oxidesemiconductor.
 6. A semiconductor device comprising: an oxidesemiconductor; an insulator in contact with the oxide semiconductor; afirst conductor overlapping with the oxide semiconductor with theinsulator between the oxide semiconductor and the first conductor; and asecond conductor and a third conductor each in contact with the oxidesemiconductor and the insulator, wherein one of the second conductor andthe third conductor includes a surface region comprising an amorphouspart, wherein the one of the second conductor and the third conductorcomprise a crystalline region below the surface region, wherein thesurface region comprises silicon and oxygen, and wherein the oxidesemiconductor and the insulator each contains In, Ga, and Zn.
 7. Thesemiconductor device according to claim 6, wherein a siliconconcentration in the surface region is greater than or equal to 5 atomic% and less than or equal to 70 atomic % measured by Rutherford backscattering spectrometry.
 8. The semiconductor device according to claim6, wherein a thickness of the surface region is greater than or equal to0.2 nm and less than or equal to 20 nm.
 9. The semiconductor deviceaccording to claim 6, wherein the insulator comprises an oxidecontaining at least one metal element contained in the oxidesemiconductor.